Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
  • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
  • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
  • H01L27/1027—Thyristors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
  • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
  • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
  • H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Applications Claiming Priority (1)

Publications (1)

Family

ID=25004764

Family Applications (1)

Country Status (10)

Families Citing this family (10)

Family Cites Families (5)

• 1976
  • 1976-12-03 US US05/747,366 patent/US4130827A/en not_active Expired - Lifetime
• 1977
  • 1977-10-26 CA CA289,611A patent/CA1095184A/en not_active Expired
  • 1977-11-22 SE SE7713184A patent/SE434446B/sv not_active IP Right Cessation
  • 1977-11-28 NL NL7713078A patent/NL7713078A/nl not_active Application Discontinuation
  • 1977-11-28 BE BE182983A patent/BE861272A/xx not_active IP Right Cessation
  • 1977-11-30 FR FR7736188A patent/FR2373162A1/fr active Granted
  • 1977-11-30 DE DE2753320A patent/DE2753320C2/de not_active Expired
  • 1977-12-01 GB GB50030/77A patent/GB1572379A/en not_active Expired
  • 1977-12-02 ES ES464707A patent/ES464707A1/es not_active Expired
  • 1977-12-03 JP JP52144641A patent/JPS5948556B2/ja not_active Expired

Also Published As

Similar Documents

Legal Events