NL7709281A - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL7709281A
NL7709281A NL7709281A NL7709281A NL7709281A NL 7709281 A NL7709281 A NL 7709281A NL 7709281 A NL7709281 A NL 7709281A NL 7709281 A NL7709281 A NL 7709281A NL 7709281 A NL7709281 A NL 7709281A
Authority
NL
Netherlands
Prior art keywords
semi
guide device
guide
Prior art date
Application number
NL7709281A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7709281A publication Critical patent/NL7709281A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL7709281A 1976-08-24 1977-08-23 Halfgeleiderinrichting. NL7709281A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/717,335 US4047196A (en) 1976-08-24 1976-08-24 High voltage semiconductor device having a novel edge contour

Publications (1)

Publication Number Publication Date
NL7709281A true NL7709281A (nl) 1978-02-28

Family

ID=24881597

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7709281A NL7709281A (nl) 1976-08-24 1977-08-23 Halfgeleiderinrichting.

Country Status (10)

Country Link
US (1) US4047196A (nl)
JP (1) JPS5327370A (nl)
AU (1) AU502694B2 (nl)
BR (1) BR7705488A (nl)
DE (1) DE2736342A1 (nl)
FR (1) FR2363196A1 (nl)
GB (1) GB1548796A (nl)
NL (1) NL7709281A (nl)
PL (1) PL113661B1 (nl)
SE (1) SE7708723L (nl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329707A (en) * 1978-09-15 1982-05-11 Westinghouse Electric Corp. Glass-sealed power thyristor
US4255757A (en) * 1978-12-05 1981-03-10 International Rectifier Corporation High reverse voltage semiconductor device with fast recovery time with central depression
JPS58173249U (ja) * 1982-05-12 1983-11-19 日本電気株式会社 高圧ダイオ−ド
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
JP3203192B2 (ja) * 1996-10-16 2001-08-27 三洋電機株式会社 半導体装置およびその製造方法
US5930660A (en) * 1997-10-17 1999-07-27 General Semiconductor, Inc. Method for fabricating diode with improved reverse energy characteristics
US6600204B2 (en) * 2001-07-11 2003-07-29 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
AU2002351686B2 (en) * 2002-01-15 2008-04-10 Robert Bosch Gmbh Semiconductor arrangement comprising a pn-transition and method for producing a semiconductor arrangement
US20110084332A1 (en) * 2009-10-08 2011-04-14 Vishay General Semiconductor, Llc. Trench termination structure
JP6107430B2 (ja) * 2012-06-08 2017-04-05 豊田合成株式会社 半導体装置
DE102016124669B3 (de) * 2016-12-16 2018-05-17 Semikron Elektronik Gmbh & Co. Kg Thyristoren mit einem jeweiligen Halbleiterkörper
DE102018113573B4 (de) * 2018-06-07 2022-11-03 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Diode mit einem Halbleiterkörper
FR3107988B1 (fr) * 2020-03-05 2023-11-10 St Microelectronics Tours Sas Formation d'un thyristor, triac ou diode de suppression de tensions transitoires

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3241010A (en) * 1962-03-23 1966-03-15 Texas Instruments Inc Semiconductor junction passivation
US3320496A (en) * 1963-11-26 1967-05-16 Int Rectifier Corp High voltage semiconductor device
US3514346A (en) * 1965-08-02 1970-05-26 Gen Electric Semiconductive devices having asymmetrically conductive junction
US3553539A (en) * 1967-11-22 1971-01-05 Matsushita Electronics Corp Microwave-oscillating device and the method of making same
US3535774A (en) * 1968-07-09 1970-10-27 Rca Corp Method of fabricating semiconductor devices
US3755720A (en) * 1972-09-25 1973-08-28 Rca Corp Glass encapsulated semiconductor device
JPS5218070B2 (nl) * 1972-10-04 1977-05-19
US3972113A (en) * 1973-05-14 1976-08-03 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices
JPS5334624B2 (nl) * 1973-06-27 1978-09-21

Also Published As

Publication number Publication date
AU2801477A (en) 1979-02-22
JPS5327370A (en) 1978-03-14
US4047196A (en) 1977-09-06
SE7708723L (sv) 1978-02-25
FR2363196A1 (fr) 1978-03-24
DE2736342A1 (de) 1978-03-02
AU502694B2 (en) 1979-08-02
BR7705488A (pt) 1978-06-06
GB1548796A (en) 1979-07-18
PL113661B1 (en) 1980-12-31
PL200347A1 (pl) 1978-04-24

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Legal Events

Date Code Title Description
BV The patent application has lapsed