PL200347A1 - Przyrzad polprzewodnikowy wysokonapieciowy - Google Patents
Przyrzad polprzewodnikowy wysokonapieciowyInfo
- Publication number
- PL200347A1 PL200347A1 PL20034777A PL20034777A PL200347A1 PL 200347 A1 PL200347 A1 PL 200347A1 PL 20034777 A PL20034777 A PL 20034777A PL 20034777 A PL20034777 A PL 20034777A PL 200347 A1 PL200347 A1 PL 200347A1
- Authority
- PL
- Poland
- Prior art keywords
- voltage semiconductor
- semiconductor
- voltage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/717,335 US4047196A (en) | 1976-08-24 | 1976-08-24 | High voltage semiconductor device having a novel edge contour |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL200347A1 true PL200347A1 (pl) | 1978-04-24 |
| PL113661B1 PL113661B1 (en) | 1980-12-31 |
Family
ID=24881597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL1977200347A PL113661B1 (en) | 1976-08-24 | 1977-08-18 | High voltage semi-conductor instrument |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4047196A (pl) |
| JP (1) | JPS5327370A (pl) |
| AU (1) | AU502694B2 (pl) |
| BR (1) | BR7705488A (pl) |
| DE (1) | DE2736342A1 (pl) |
| FR (1) | FR2363196A1 (pl) |
| GB (1) | GB1548796A (pl) |
| NL (1) | NL7709281A (pl) |
| PL (1) | PL113661B1 (pl) |
| SE (1) | SE7708723L (pl) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4329707A (en) * | 1978-09-15 | 1982-05-11 | Westinghouse Electric Corp. | Glass-sealed power thyristor |
| US4255757A (en) * | 1978-12-05 | 1981-03-10 | International Rectifier Corporation | High reverse voltage semiconductor device with fast recovery time with central depression |
| JPS58173249U (ja) * | 1982-05-12 | 1983-11-19 | 日本電気株式会社 | 高圧ダイオ−ド |
| GB2176338A (en) * | 1985-06-06 | 1986-12-17 | Marconi Electronic Devices | Edge contouring in a semiconductor device |
| US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
| US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
| JP3203192B2 (ja) * | 1996-10-16 | 2001-08-27 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
| US5930660A (en) * | 1997-10-17 | 1999-07-27 | General Semiconductor, Inc. | Method for fabricating diode with improved reverse energy characteristics |
| US6600204B2 (en) * | 2001-07-11 | 2003-07-29 | General Semiconductor, Inc. | Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same |
| JP2005515640A (ja) * | 2002-01-15 | 2005-05-26 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | ｐｎ接合を備えた半導体構造物及び半導体構造物の製造方法 |
| US20110084332A1 (en) * | 2009-10-08 | 2011-04-14 | Vishay General Semiconductor, Llc. | Trench termination structure |
| JP6107430B2 (ja) * | 2012-06-08 | 2017-04-05 | 豊田合成株式会社 | 半導体装置 |
| DE102016124669B3 (de) * | 2016-12-16 | 2018-05-17 | Semikron Elektronik Gmbh & Co. Kg | Thyristoren mit einem jeweiligen Halbleiterkörper |
| DE102018113573B4 (de) * | 2018-06-07 | 2022-11-03 | Semikron Elektronik Gmbh & Co. Kg Patentabteilung | Diode mit einem Halbleiterkörper |
| FR3107988B1 (fr) * | 2020-03-05 | 2023-11-10 | St Microelectronics Tours Sas | Formation d'un thyristor, triac ou diode de suppression de tensions transitoires |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3241010A (en) * | 1962-03-23 | 1966-03-15 | Texas Instruments Inc | Semiconductor junction passivation |
| US3320496A (en) * | 1963-11-26 | 1967-05-16 | Int Rectifier Corp | High voltage semiconductor device |
| US3514346A (en) * | 1965-08-02 | 1970-05-26 | Gen Electric | Semiconductive devices having asymmetrically conductive junction |
| US3553539A (en) * | 1967-11-22 | 1971-01-05 | Matsushita Electronics Corp | Microwave-oscillating device and the method of making same |
| US3535774A (en) * | 1968-07-09 | 1970-10-27 | Rca Corp | Method of fabricating semiconductor devices |
| US3755720A (en) * | 1972-09-25 | 1973-08-28 | Rca Corp | Glass encapsulated semiconductor device |
| JPS5218070B2 (pl) * | 1972-10-04 | 1977-05-19 | ||
| US3972113A (en) * | 1973-05-14 | 1976-08-03 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
| JPS5334624B2 (pl) * | 1973-06-27 | 1978-09-21 |
-
1976
- 1976-08-24 US US05/717,335 patent/US4047196A/en not_active Expired - Lifetime
-
1977
- 1977-07-29 SE SE7708723A patent/SE7708723L/xx unknown
- 1977-08-12 DE DE19772736342 patent/DE2736342A1/de not_active Withdrawn
- 1977-08-18 GB GB34732/77A patent/GB1548796A/en not_active Expired
- 1977-08-18 AU AU28014/77A patent/AU502694B2/en not_active Expired
- 1977-08-18 PL PL1977200347A patent/PL113661B1/pl unknown
- 1977-08-18 BR BR7705488A patent/BR7705488A/pt unknown
- 1977-08-23 NL NL7709281A patent/NL7709281A/xx not_active Application Discontinuation
- 1977-08-23 FR FR7725708A patent/FR2363196A1/fr not_active Withdrawn
- 1977-08-24 JP JP10216977A patent/JPS5327370A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2363196A1 (fr) | 1978-03-24 |
| GB1548796A (en) | 1979-07-18 |
| AU2801477A (en) | 1979-02-22 |
| BR7705488A (pt) | 1978-06-06 |
| US4047196A (en) | 1977-09-06 |
| SE7708723L (sv) | 1978-02-25 |
| NL7709281A (nl) | 1978-02-28 |
| JPS5327370A (en) | 1978-03-14 |
| AU502694B2 (en) | 1979-08-02 |
| PL113661B1 (en) | 1980-12-31 |
| DE2736342A1 (de) | 1978-03-02 |
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