GB1477432A - Integrated crosspoint system - Google Patents

Integrated crosspoint system

Info

Publication number
GB1477432A
GB1477432A GB1750375A GB1750375A GB1477432A GB 1477432 A GB1477432 A GB 1477432A GB 1750375 A GB1750375 A GB 1750375A GB 1750375 A GB1750375 A GB 1750375A GB 1477432 A GB1477432 A GB 1477432A
Authority
GB
United Kingdom
Prior art keywords
island
thyristor
isolating
integrated
integrated crosspoint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1750375A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1477432A publication Critical patent/GB1477432A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q3/00Selecting arrangements
    • H04Q3/42Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817Thyristors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Power Conversion In General (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)

Abstract

1477432 Integrated circuits SIEMENS AG 28 April 1975 [25 June 1974] 17503/73 Heading H1K Each thyristor of an integrated cross-point system comprises successively tested regions 15, 14, 13, 12 of alternating conductivity types in an isolated island 11 of opposite type to the outer thyristor region 12, the island 11 being surrounded by an isolating pn junction between itself and the substrate 10 and isolating walls 16. A connection 20 may optionally be provided between the outer thyristor region 12 (anode) and the island 11. Reference has been directed by the Comptroller to Specification:-1427261.
GB1750375A 1974-06-25 1975-04-28 Integrated crosspoint system Expired GB1477432A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE742430416A DE2430416C3 (en) 1974-06-25 1974-06-25 Integrated crosspoint circuit

Publications (1)

Publication Number Publication Date
GB1477432A true GB1477432A (en) 1977-06-22

Family

ID=5918887

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1750375A Expired GB1477432A (en) 1974-06-25 1975-04-28 Integrated crosspoint system

Country Status (9)

Country Link
JP (1) JPS5125084A (en)
AT (1) AT342670B (en)
CH (1) CH592962A5 (en)
DE (1) DE2430416C3 (en)
FR (1) FR2276695A1 (en)
GB (1) GB1477432A (en)
IT (1) IT1039036B (en)
SE (1) SE7507315L (en)
ZA (1) ZA752984B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596514B2 (en) * 1977-03-08 1984-02-13 日本電信電話株式会社 Low crosstalk monolithic PNPN switch matrix using PN junction separation method
JPH01201959A (en) * 1988-02-05 1989-08-14 Matsushita Electron Corp Semiconductor device
JPH06103745B2 (en) * 1989-10-06 1994-12-14 株式会社東芝 Integrated circuit element

Also Published As

Publication number Publication date
DE2430416B2 (en) 1978-06-22
IT1039036B (en) 1979-12-10
DE2430416C3 (en) 1979-03-08
JPS5125084A (en) 1976-03-01
ZA752984B (en) 1976-04-28
DE2430416A1 (en) 1976-01-15
SE7507315L (en) 1975-12-29
ATA373675A (en) 1977-08-15
AT342670B (en) 1978-04-10
CH592962A5 (en) 1977-11-15
FR2276695A1 (en) 1976-01-23

Similar Documents

Publication Publication Date Title
GB945740A (en)
GB1488760A (en) Electrical assemblies
CA951341A (en) Semiconductor wafer set feeding system
CA1001774A (en) Semiconductor device of the iii-v type having ohmic contacts and method of obtaining said contacts
GB1014735A (en) Encapsulated pn junction semiconductor device
GB1477432A (en) Integrated crosspoint system
GB1504032A (en) Muting circuits
GB1484218A (en) Semiconductor rectifiers
ES383504A1 (en) A high frequency integrated circuit having circuit elements in separate and mutually spaced isolation regions
CA988817A (en) Etching of group iii-v semiconductors
GB1379270A (en) Integrated circuit manufacturing process
JPS5272586A (en) Production of semiconductor device
JPS5415674A (en) Semiconductor device containing schottky barrier
GB958247A (en) Semiconductor devices and methods of fabricating same
CA939829A (en) Ohmic contacts for semiconductor devices
CA830149A (en) Method of forming a recess in a semiconductor substrate having at least one pn junction
JPS5316586A (en) Semiconductor device
FR2413788A1 (en) Isolation structure for central telephone exchange switch thyristor - consists of two high doped regions of opposite and same polarity, respectively as epitaxial layer and adjacent each other
GB1199437A (en) Power Transistor
GB1107343A (en) Microminiaturised, integrated circuit arrangement
ES434909A1 (en) Semiconductor switching device
CA950130A (en) Overlay transistor employing highly conductive semiconductor grid and method for making
GB1252281A (en)
GB1045788A (en) Manufacture of semi-conductor solid-state circuits
GB1045514A (en) Simultaneous double diffusion process

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee