GB1107343A - Microminiaturised, integrated circuit arrangement - Google Patents

Microminiaturised, integrated circuit arrangement

Info

Publication number
GB1107343A
GB1107343A GB370366A GB370366A GB1107343A GB 1107343 A GB1107343 A GB 1107343A GB 370366 A GB370366 A GB 370366A GB 370366 A GB370366 A GB 370366A GB 1107343 A GB1107343 A GB 1107343A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
microminiaturised
recombination centres
diodes
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB370366A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1107343A publication Critical patent/GB1107343A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,107,343. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 27 Jan., 1966 [18 Feb., 1965], No. 3703/66. Heading H1K. Active and/or passive components in an integrated circuit are isolated by means of carrier recombination centres. In a planar circuit comprising a transistor and two diodes the transistor is isolated from the diodes by removing a strip of a surface oxide layer and diffusing gold or nickel into the wafer. The recombination centres may also, be uniformly distributed through the wafer, for example by introducing gold into the semiconductor material as it is drawn from the melt. The isolation may also be achieved by scratching the surface, or by removing part of the oxide layer and mordant roughening the surface, to produce the recombination centres.
GB370366A 1965-02-18 1966-01-27 Microminiaturised, integrated circuit arrangement Expired GB1107343A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET28013A DE1216990B (en) 1965-02-18 1965-02-18 Solid-state circuit and process for its manufacture

Publications (1)

Publication Number Publication Date
GB1107343A true GB1107343A (en) 1968-03-27

Family

ID=7553863

Family Applications (1)

Application Number Title Priority Date Filing Date
GB370366A Expired GB1107343A (en) 1965-02-18 1966-01-27 Microminiaturised, integrated circuit arrangement

Country Status (2)

Country Link
DE (1) DE1216990B (en)
GB (1) GB1107343A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1256116A (en) * 1959-02-06 1961-03-17 Texas Instruments Inc New miniature electronic circuits and processes for their manufacture

Also Published As

Publication number Publication date
DE1216990B (en) 1966-05-18

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