JPS5412281A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5412281A
JPS5412281A JP7646577A JP7646577A JPS5412281A JP S5412281 A JPS5412281 A JP S5412281A JP 7646577 A JP7646577 A JP 7646577A JP 7646577 A JP7646577 A JP 7646577A JP S5412281 A JPS5412281 A JP S5412281A
Authority
JP
Japan
Prior art keywords
plane
elements
semiconductor device
resistance
type resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7646577A
Other languages
Japanese (ja)
Other versions
JPS6126228B2 (en
Inventor
Shigeru Komatsu
Satoshi Takahashi
Koji Suzuki
Masao Wakatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7646577A priority Critical patent/JPS5412281A/en
Priority to FR7819524A priority patent/FR2396417A1/en
Priority to DE2828605A priority patent/DE2828605C3/en
Priority to US05/920,358 priority patent/US4236832A/en
Priority to GB7828266A priority patent/GB2000639B/en
Publication of JPS5412281A publication Critical patent/JPS5412281A/en
Publication of JPS6126228B2 publication Critical patent/JPS6126228B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To avert the change in resistance value after resin sealing by forming a P type resistance element with two elements in an arbitrary direction and a direction at a right angle thereto and coupling these by making the ratio of respective resistance values at 1:1 at the time of providing the P type resistance elements within the plane of a semiconductor substrate having planes substantially parallel with (100) plane.
JP7646577A 1977-06-29 1977-06-29 Semiconductor device Granted JPS5412281A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP7646577A JPS5412281A (en) 1977-06-29 1977-06-29 Semiconductor device
FR7819524A FR2396417A1 (en) 1977-06-29 1978-06-29 SEMICONDUCTOR COMPONENT INCLUDING A RESISTOR
DE2828605A DE2828605C3 (en) 1977-06-29 1978-06-29 Semiconductor device
US05/920,358 US4236832A (en) 1977-06-29 1978-06-29 Strain insensitive integrated circuit resistor pair
GB7828266A GB2000639B (en) 1977-06-29 1978-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7646577A JPS5412281A (en) 1977-06-29 1977-06-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5412281A true JPS5412281A (en) 1979-01-29
JPS6126228B2 JPS6126228B2 (en) 1986-06-19

Family

ID=13605904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7646577A Granted JPS5412281A (en) 1977-06-29 1977-06-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5412281A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624356A (en) * 1985-07-01 1987-01-10 Nec Corp Semiconductor integrated circuit device
JPH0341761A (en) * 1989-07-10 1991-02-22 Nissan Motor Co Ltd Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624356A (en) * 1985-07-01 1987-01-10 Nec Corp Semiconductor integrated circuit device
JPH0523069B2 (en) * 1985-07-01 1993-03-31 Nippon Electric Co
JPH0341761A (en) * 1989-07-10 1991-02-22 Nissan Motor Co Ltd Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6126228B2 (en) 1986-06-19

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