GB1223704A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1223704A
GB1223704A GB08194/68A GB1819468A GB1223704A GB 1223704 A GB1223704 A GB 1223704A GB 08194/68 A GB08194/68 A GB 08194/68A GB 1819468 A GB1819468 A GB 1819468A GB 1223704 A GB1223704 A GB 1223704A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
bodies
terminal
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08194/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2451667A external-priority patent/JPS5144390B1/ja
Priority claimed from JP2808867A external-priority patent/JPS5144637B1/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1223704A publication Critical patent/GB1223704A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Abstract

1,223,704. Semi-conductor devices. HITACHI Ltd. 17 April, 1968 [19 April, 1967; 4 May, 1967], No. 18194/68. Heading H1K. One or more semi-conductor device bodies with PN junctions terminating at one major face and junctionless semi-conductor terminal bodies are disposed in spaced relationship with their major faces in two parallel planes. A beam lead in one plane electrically connects one device body with another or with a terminal body while a connection formed on an insulating support disposed adjacent the other plane is connected to said other device or terminal body. A typical assembly (Fig. 3) is prepared from a silicon wafer by diffusing through oxide masking to form the desired devices at at least one face and then evaporating or electroplating on aluminium or gold 24 to form electrodes which are interconnected by heavier deposits of aluminium, chromium or molybdenum constituting beam leads 20, 21. Isolation of the elements is effected by subsequently etching away the silicon at 26, using photoresist techniques. The assembly is finally mounted by soldering contacts 31 on the terminal bodies to metallized tracks 32 on ceramic base 21. As shown the lower faces of the device bodies carry an insulating layer but they may if desired be connected to tracks on the substrate to provide external connections or interconnections. Gold or solder balls may be used to form connections to the metallization on the substrate which may alternatively consist of an oxide coated polycrystalline semi-conductor material. To reinforce the structure a glass or resin layer may be formed over the beam leads. The two levels of interconnection afforded by the invention are particularly useful where interconnections need to cross one another.
GB08194/68A 1967-04-19 1968-04-17 Semiconductor device Expired GB1223704A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2451667A JPS5144390B1 (en) 1967-04-19 1967-04-19
JP2808867A JPS5144637B1 (en) 1967-05-04 1967-05-04

Publications (1)

Publication Number Publication Date
GB1223704A true GB1223704A (en) 1971-03-03

Family

ID=26362046

Family Applications (2)

Application Number Title Priority Date Filing Date
GB20648/70A Expired GB1223705A (en) 1967-04-19 1968-04-17 Semiconductor devices
GB08194/68A Expired GB1223704A (en) 1967-04-19 1968-04-17 Semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB20648/70A Expired GB1223705A (en) 1967-04-19 1968-04-17 Semiconductor devices

Country Status (1)

Country Link
GB (2) GB1223705A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211986A (en) * 1987-09-25 1989-07-12 Plessey Co Plc Electrodes for semiconductor devices
EP0539312A2 (en) * 1991-10-23 1993-04-28 International Business Machines Corporation Isolated films using an air dielectric
GB2264389A (en) * 1991-12-26 1993-08-25 Fuji Electric Co Ltd Connections for power semiconductor devices
GB2274200A (en) * 1991-10-29 1994-07-13 Gen Electric A High density interconnect structure including a spacer structure and a gap
EP1363327A3 (en) * 2002-05-17 2006-02-01 Agilent Technologies, Inc. High speed electronic interconnection using a detachable substrate
US8912530B2 (en) 2011-09-22 2014-12-16 Samsung Electronics Co., Ltd. Electrode structure including graphene and field effect transistor having the same
US9306005B2 (en) 2012-12-11 2016-04-05 Samsung Electronics Co., Ltd. Electronic device including graphene

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2208453B (en) * 1987-08-24 1991-11-20 Marconi Electronic Devices Capacitors
GB9305448D0 (en) * 1993-03-17 1993-05-05 British Tech Group Semiconductor structure and method of manufacturing same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211986A (en) * 1987-09-25 1989-07-12 Plessey Co Plc Electrodes for semiconductor devices
GB2211986B (en) * 1987-09-25 1990-11-21 Plessey Co Plc An improved semi-conductive device
EP0539312A2 (en) * 1991-10-23 1993-04-28 International Business Machines Corporation Isolated films using an air dielectric
EP0539312A3 (en) * 1991-10-23 1994-01-19 Ibm
GB2274200A (en) * 1991-10-29 1994-07-13 Gen Electric A High density interconnect structure including a spacer structure and a gap
GB2274200B (en) * 1991-10-29 1996-03-20 Gen Electric A high density interconnect structure including a spacer structure and a gap
GB2264389A (en) * 1991-12-26 1993-08-25 Fuji Electric Co Ltd Connections for power semiconductor devices
GB2264389B (en) * 1991-12-26 1995-08-30 Fuji Electric Co Ltd Power semiconductor device
EP1363327A3 (en) * 2002-05-17 2006-02-01 Agilent Technologies, Inc. High speed electronic interconnection using a detachable substrate
US8912530B2 (en) 2011-09-22 2014-12-16 Samsung Electronics Co., Ltd. Electrode structure including graphene and field effect transistor having the same
US9306005B2 (en) 2012-12-11 2016-04-05 Samsung Electronics Co., Ltd. Electronic device including graphene

Also Published As

Publication number Publication date
GB1223705A (en) 1971-03-03

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