FR2456389A1 - Structure d'electrodes pour dispositifs semi-conducteurs - Google Patents
Structure d'electrodes pour dispositifs semi-conducteursInfo
- Publication number
- FR2456389A1 FR2456389A1 FR8004965A FR8004965A FR2456389A1 FR 2456389 A1 FR2456389 A1 FR 2456389A1 FR 8004965 A FR8004965 A FR 8004965A FR 8004965 A FR8004965 A FR 8004965A FR 2456389 A1 FR2456389 A1 FR 2456389A1
- Authority
- FR
- France
- Prior art keywords
- layer
- semiconductor devices
- regions
- playing
- role
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
L'INVENTION SE RAPPORTE A UNE STRUCTURE D'ELECTRODES A UTILISER DANS DES DISPOSITIFS SEMI-CONDUCTEURS. SELON L'INVENTION, ELLE COMPREND UNE COUCHE 20 DE SEMI-CONDUCTEUR, UNE COUCHE CONDUCTRICE 23 DISPOSEE SUR UNE SURFACE DE LA COUCHE 20, DES PREMIERES REGIONS 22 ENTRE LES COUCHES 20 ET 23 ET JOUANT LE ROLE DE PASSAGES PRINCIPAUX POUR LA TRANSMISSION DES PORTEURS MINORITAIRES DE LA COUCHE 20 A LA COUCHE 23; ET DES SECONDES REGIONS 21 ENTRE LES COUCHES 20 ET 23 ET JOUANT LE ROLE DE PASSAGES PRINCIPAUX POUR LE TRANSFERT DE PORTEURS MAJORITAIRES ENTRE ELLES, LES PREMIERES ET SECONDES REGIONS ETANT SELECTIVEMENT FORMEES SUR LA COUCHE 20, AFIN D'ETRE ADJACENTES LES UNES AUX AUTRES ET DE SE TROUVER PARALLELES AUX TRAJETS ELECTRIQUES. L'INVENTION S'APPLIQUE NOTAMMENT A LA FORMATION DE DIODES, THYRISTORS ET TRANSISTORS.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5560179A JPS5949712B2 (ja) | 1979-05-07 | 1979-05-07 | 半導体整流ダイオ−ド |
JP5560079A JPS5949711B2 (ja) | 1979-05-07 | 1979-05-07 | 電極付半導体装置 |
JP11321679A JPS5637683A (en) | 1979-09-04 | 1979-09-04 | Semiconductor rectifying device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2456389A1 true FR2456389A1 (fr) | 1980-12-05 |
FR2456389B1 FR2456389B1 (fr) | 1985-09-27 |
Family
ID=27295641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8004965A Expired FR2456389B1 (fr) | 1979-05-07 | 1980-03-05 | Structure d'electrodes pour dispositifs semi-conducteurs |
Country Status (6)
Country | Link |
---|---|
US (1) | US4587547A (fr) |
CA (1) | CA1150417A (fr) |
DE (1) | DE3008034A1 (fr) |
FR (1) | FR2456389B1 (fr) |
GB (1) | GB2050694B (fr) |
NL (1) | NL188434C (fr) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0077004A2 (fr) * | 1981-10-07 | 1983-04-20 | Hitachi, Ltd. | Diode redresseuse à semi-conducteur |
EP0103138A2 (fr) * | 1982-08-11 | 1984-03-21 | Hitachi, Ltd. | Diode redresseuse semi-conductrice |
EP0327901A1 (fr) * | 1988-02-12 | 1989-08-16 | Asea Brown Boveri Ag | Thyristor GTO de forte puissance et méthode de fabrication |
EP0430133A2 (fr) * | 1989-11-28 | 1991-06-05 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Dispositif semi-conducteur de puissance comportant des courts-circuits d'émetteur |
EP0485059A2 (fr) * | 1990-09-28 | 1992-05-13 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur comportant une diode de type pin à une tension de claquage élevée |
WO1999013512A1 (fr) * | 1997-09-10 | 1999-03-18 | Infineon Technologies Ag | Composant semi-conducteur comportant une zone de derive |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0130669A1 (fr) * | 1983-04-30 | 1985-01-09 | Kabushiki Kaisha Toshiba | Thyristor à blocage par la gâchette avec structure de cathode en forme de maille |
DE3628857A1 (de) * | 1985-08-27 | 1987-03-12 | Mitsubishi Electric Corp | Halbleitereinrichtung |
DE3633161A1 (de) * | 1986-09-30 | 1988-04-07 | Licentia Gmbh | Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone |
JPH0795592B2 (ja) * | 1987-04-14 | 1995-10-11 | 株式会社豊田中央研究所 | 静電誘導型半導体装置 |
US5119148A (en) * | 1989-11-29 | 1992-06-02 | Motorola, Inc. | Fast damper diode and method |
JP2663679B2 (ja) * | 1990-04-20 | 1997-10-15 | 富士電機株式会社 | 伝導度変調型mosfet |
DE4201183A1 (de) * | 1992-01-17 | 1993-07-22 | Eupec Gmbh & Co Kg | Leistungsdiode |
US5360990A (en) * | 1993-03-29 | 1994-11-01 | Sunpower Corporation | P/N junction device having porous emitter |
US5369291A (en) * | 1993-03-29 | 1994-11-29 | Sunpower Corporation | Voltage controlled thyristor |
DE4342482C2 (de) * | 1993-12-13 | 1995-11-30 | Siemens Ag | Schnelle Leistungshalbleiterbauelemente |
US5705830A (en) * | 1996-09-05 | 1998-01-06 | Northrop Grumman Corporation | Static induction transistors |
JP4017258B2 (ja) * | 1998-07-29 | 2007-12-05 | 三菱電機株式会社 | 半導体装置 |
JP4681176B2 (ja) * | 1999-07-15 | 2011-05-11 | ローム株式会社 | Mos型電界効果トランジスタを有する半導体装置 |
DE102004005084B4 (de) * | 2004-02-02 | 2013-03-14 | Infineon Technologies Ag | Halbleiterbauelement |
US20050275065A1 (en) * | 2004-06-14 | 2005-12-15 | Tyco Electronics Corporation | Diode with improved energy impulse rating |
DE102004044141A1 (de) | 2004-09-13 | 2006-03-30 | Robert Bosch Gmbh | Halbleiteranordnung zur Spannungsbegrenzung |
JP2006295062A (ja) * | 2005-04-14 | 2006-10-26 | Rohm Co Ltd | 半導体装置 |
JP2010283132A (ja) | 2009-06-04 | 2010-12-16 | Mitsubishi Electric Corp | 半導体装置 |
JP5321669B2 (ja) | 2010-11-25 | 2013-10-23 | 株式会社デンソー | 半導体装置 |
US8809902B2 (en) | 2011-10-17 | 2014-08-19 | Infineon Technologies Austria Ag | Power semiconductor diode, IGBT, and method for manufacturing thereof |
US9123828B2 (en) | 2013-11-14 | 2015-09-01 | Infineon Technologies Ag | Semiconductor device and method for forming a semiconductor device |
JP6443267B2 (ja) | 2015-08-28 | 2018-12-26 | 株式会社デンソー | 半導体装置 |
JP6750668B2 (ja) * | 2016-02-29 | 2020-09-02 | 三菱電機株式会社 | 半導体装置 |
JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
WO2020117679A1 (fr) | 2018-12-03 | 2020-06-11 | Macom Technology Solutions Holdings, Inc. | Diodes pin à régions intrinsèques à épaisseurs multiples |
EP3925002A1 (fr) * | 2019-02-12 | 2021-12-22 | MACOM Technology Solutions Holdings, Inc. | Limiteurs à diode de région multi-i monolithiques |
US20210343837A1 (en) * | 2020-05-01 | 2021-11-04 | Vanguard International Semiconductor Corporation | Semiconductor structures |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1227138A (fr) * | 1958-06-25 | 1960-08-18 | Siemens Ag | Diode de commutation |
FR1555029A (fr) * | 1967-02-10 | 1969-01-24 | ||
FR2371779A1 (fr) * | 1976-11-19 | 1978-06-16 | Philips Nv | Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL278058A (fr) * | 1961-05-26 | |||
US3395320A (en) * | 1965-08-25 | 1968-07-30 | Bell Telephone Labor Inc | Isolation technique for integrated circuit structure |
CH452710A (de) * | 1966-12-29 | 1968-03-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung eines steuerbaren Halbleiterventils mit pnpn Struktur mit einer mit Kurzschlüssen versehenen Emitterzone |
US3497776A (en) * | 1968-03-06 | 1970-02-24 | Westinghouse Electric Corp | Uniform avalanche-breakdown rectifiers |
US3617829A (en) * | 1969-12-01 | 1971-11-02 | Motorola Inc | Radiation-insensitive voltage standard means |
US3641403A (en) * | 1970-05-25 | 1972-02-08 | Mitsubishi Electric Corp | Thyristor with degenerate semiconductive region |
JPS5213918B2 (fr) * | 1972-02-02 | 1977-04-18 | ||
JPS5548705B2 (fr) * | 1973-06-28 | 1980-12-08 | ||
US3918082A (en) * | 1973-11-07 | 1975-11-04 | Jearld L Hutson | Semiconductor switching device |
DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
US4156246A (en) * | 1977-05-25 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Combined ohmic and Schottky output transistors for logic circuit |
-
1980
- 1980-02-27 GB GB8006652A patent/GB2050694B/en not_active Expired
- 1980-02-29 NL NLAANVRAGE8001226,A patent/NL188434C/xx not_active IP Right Cessation
- 1980-03-03 DE DE19803008034 patent/DE3008034A1/de active Granted
- 1980-03-05 FR FR8004965A patent/FR2456389B1/fr not_active Expired
- 1980-03-05 CA CA000347000A patent/CA1150417A/fr not_active Expired
-
1983
- 1983-07-12 US US06/512,942 patent/US4587547A/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1227138A (fr) * | 1958-06-25 | 1960-08-18 | Siemens Ag | Diode de commutation |
DE1133472B (de) * | 1958-06-25 | 1962-07-19 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung und danach hergestellte Halbleiteranordnung |
FR1555029A (fr) * | 1967-02-10 | 1969-01-24 | ||
CH474154A (de) * | 1967-02-10 | 1969-06-15 | Licentia Gmbh | Halbleiterbauelement |
FR2371779A1 (fr) * | 1976-11-19 | 1978-06-16 | Philips Nv | Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication |
Non-Patent Citations (1)
Title |
---|
EXBK/70 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0077004A2 (fr) * | 1981-10-07 | 1983-04-20 | Hitachi, Ltd. | Diode redresseuse à semi-conducteur |
EP0077004A3 (en) * | 1981-10-07 | 1985-09-18 | Hitachi, Ltd. | Semiconductor rectifier diode |
EP0103138A2 (fr) * | 1982-08-11 | 1984-03-21 | Hitachi, Ltd. | Diode redresseuse semi-conductrice |
EP0103138A3 (en) * | 1982-08-11 | 1985-09-11 | Hitachi, Ltd. | Semiconductor rectifier diode |
EP0327901A1 (fr) * | 1988-02-12 | 1989-08-16 | Asea Brown Boveri Ag | Thyristor GTO de forte puissance et méthode de fabrication |
EP0430133A3 (en) * | 1989-11-28 | 1991-09-11 | Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg | Power semiconductor device having emitter shorts |
EP0430133A2 (fr) * | 1989-11-28 | 1991-06-05 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Dispositif semi-conducteur de puissance comportant des courts-circuits d'émetteur |
US5142347A (en) * | 1989-11-28 | 1992-08-25 | Siemens Aktiengesellschaft | Power semiconductor component with emitter shorts |
EP0485059A2 (fr) * | 1990-09-28 | 1992-05-13 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur comportant une diode de type pin à une tension de claquage élevée |
US5162876A (en) * | 1990-09-28 | 1992-11-10 | Kabushiki Kaisha Toshiba | Semiconductor device having high breakdown voltage |
EP0485059A3 (en) * | 1990-09-28 | 1992-12-02 | Kabushiki Kaisha Toshiba | Semiconductor device including a pin-diode having high breakdown voltage |
WO1999013512A1 (fr) * | 1997-09-10 | 1999-03-18 | Infineon Technologies Ag | Composant semi-conducteur comportant une zone de derive |
US6388271B1 (en) | 1997-09-10 | 2002-05-14 | Siemens Aktiengesellschaft | Semiconductor component |
Also Published As
Publication number | Publication date |
---|---|
FR2456389B1 (fr) | 1985-09-27 |
GB2050694B (en) | 1983-09-28 |
DE3008034A1 (de) | 1980-11-13 |
NL8001226A (nl) | 1980-11-11 |
DE3008034C2 (fr) | 1989-04-20 |
GB2050694A (en) | 1981-01-07 |
NL188434C (nl) | 1992-06-16 |
CA1150417A (fr) | 1983-07-19 |
NL188434B (nl) | 1992-01-16 |
US4587547A (en) | 1986-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |