JPS5755776A - Semiconductor inverter circuit device - Google Patents

Semiconductor inverter circuit device

Info

Publication number
JPS5755776A
JPS5755776A JP55132107A JP13210780A JPS5755776A JP S5755776 A JPS5755776 A JP S5755776A JP 55132107 A JP55132107 A JP 55132107A JP 13210780 A JP13210780 A JP 13210780A JP S5755776 A JPS5755776 A JP S5755776A
Authority
JP
Japan
Prior art keywords
type semiconductor
inverter circuit
circuit device
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55132107A
Other languages
Japanese (ja)
Other versions
JPH0150111B2 (en
Inventor
Masao Suzuki
Hiroshi Yoshimura
Tadao Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55132107A priority Critical patent/JPS5755776A/en
Publication of JPS5755776A publication Critical patent/JPS5755776A/en
Publication of JPH0150111B2 publication Critical patent/JPH0150111B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Inverter Devices (AREA)

Abstract

PURPOSE:To extremely simply form a high-performance inverter device, by a method wherein an inverter circuit is constituted by using a semiconductor substrate. CONSTITUTION:P type semiconductor regions Q1, Q2, Q4, and an N type semiconductor region Q3 are formed on an N type semiconductor substrate 1 from the main surface 2 side and N type semiconductor regions Q51, Q52..., Q6, Q7, Q9 and P type semiconductor regions Q8, Q10, are formed in the Q1, Q4. And conductive layers C1, C2, C8 are arranged on the Q3, Q8, Q10 and an insulating layer 3 is formed to bury the layers C1, C2, C8. And a P channel MIS field effect transistor M1, an N channel MIS field effect transistor M2 and an N channel field effect transistor M3 are formed by Q1, Q2, Q3, C1, and Q6, Q7, Q8, C2, and Q6, Q9, Q10, C8 respectively. Therefore, an inverter circuit device can be formed with extremely simple constitution by using the semiconductor substrate.
JP55132107A 1980-09-22 1980-09-22 Semiconductor inverter circuit device Granted JPS5755776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55132107A JPS5755776A (en) 1980-09-22 1980-09-22 Semiconductor inverter circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55132107A JPS5755776A (en) 1980-09-22 1980-09-22 Semiconductor inverter circuit device

Publications (2)

Publication Number Publication Date
JPS5755776A true JPS5755776A (en) 1982-04-02
JPH0150111B2 JPH0150111B2 (en) 1989-10-27

Family

ID=15073603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55132107A Granted JPS5755776A (en) 1980-09-22 1980-09-22 Semiconductor inverter circuit device

Country Status (1)

Country Link
JP (1) JPS5755776A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01218365A (en) * 1988-02-25 1989-08-31 Fanuc Ltd Inverter device
JPH04355956A (en) * 1991-10-04 1992-12-09 Hitachi Ltd Semiconductor integrated circuit device
JPH053290A (en) * 1991-10-04 1993-01-08 Hitachi Ltd Semiconductor integrated circuit device
JP2007320573A (en) * 2006-05-30 2007-12-13 Kao Corp Packaging body

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01218365A (en) * 1988-02-25 1989-08-31 Fanuc Ltd Inverter device
JPH04355956A (en) * 1991-10-04 1992-12-09 Hitachi Ltd Semiconductor integrated circuit device
JPH053290A (en) * 1991-10-04 1993-01-08 Hitachi Ltd Semiconductor integrated circuit device
JP2007320573A (en) * 2006-05-30 2007-12-13 Kao Corp Packaging body

Also Published As

Publication number Publication date
JPH0150111B2 (en) 1989-10-27

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