CA969290A - Fabrication of semiconductor devices incorporating polycrystalline silicon - Google Patents

Fabrication of semiconductor devices incorporating polycrystalline silicon

Info

Publication number
CA969290A
CA969290A CA152,188A CA152188A CA969290A CA 969290 A CA969290 A CA 969290A CA 152188 A CA152188 A CA 152188A CA 969290 A CA969290 A CA 969290A
Authority
CA
Canada
Prior art keywords
fabrication
semiconductor devices
polycrystalline silicon
devices incorporating
incorporating polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA152,188A
Inventor
Alfred C. Ipri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA969290A publication Critical patent/CA969290A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CA152,188A 1971-10-20 1972-09-20 Fabrication of semiconductor devices incorporating polycrystalline silicon Expired CA969290A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19071971A 1971-10-20 1971-10-20

Publications (1)

Publication Number Publication Date
CA969290A true CA969290A (en) 1975-06-10

Family

ID=22702482

Family Applications (1)

Application Number Title Priority Date Filing Date
CA152,188A Expired CA969290A (en) 1971-10-20 1972-09-20 Fabrication of semiconductor devices incorporating polycrystalline silicon

Country Status (5)

Country Link
JP (1) JPS5234193B2 (en)
CA (1) CA969290A (en)
DE (1) DE2250570A1 (en)
GB (1) GB1384153A (en)
IT (1) IT968985B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258360A (en) * 1975-11-10 1977-05-13 Toshiba Corp Production of semiconductor device
NL7612883A (en) * 1976-11-19 1978-05-23 Philips Nv SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS57100949U (en) * 1980-12-09 1982-06-21
GB8507624D0 (en) * 1985-03-23 1985-05-01 Standard Telephones Cables Ltd Semiconductor devices
JPH07101694B2 (en) * 1989-02-08 1995-11-01 株式会社日立製作所 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
IT968985B (en) 1974-03-20
DE2250570A1 (en) 1973-04-26
JPS4850677A (en) 1973-07-17
GB1384153A (en) 1975-02-19
JPS5234193B2 (en) 1977-09-01

Similar Documents

Publication Publication Date Title
MY7600090A (en) Fabrication of semiconductor devices
CA926036A (en) Fabrication of semiconductor devices
CA937337A (en) Fabrication of semiconductor devices
CA963169A (en) Semiconductor shift register using polycrystalline silicon
CA927978A (en) Fabrication of integrated semiconductor devices by electrochemical etching
CA969290A (en) Fabrication of semiconductor devices incorporating polycrystalline silicon
CA920720A (en) Fabrication of semiconductor devices
AU459526B2 (en) Integrated semiconductor structure
CA944870A (en) Semiconductor device fabrication using combination of energy beams for masking and impurity doping
CA965689A (en) Doping of silicon crystals
CA934483A (en) Fabrication of complementary semiconductor devices
CA940019A (en) Manufacture of silicon monocrystals
CA902796A (en) Fabrication of semiconductor devices
CA962372A (en) Isolation of semiconductor devices
AU458873B2 (en) Fabrication of semiconductor devices
AU452767B2 (en) Fabrication of semiconductor devices
CA903650A (en) Preferential etching of silicon
CA862349A (en) Method of fabrication of semiconductor devices
AU2361670A (en) Fabrication of semiconductor devices
AU2328970A (en) Fabrication of semiconductor devices
CA866996A (en) Methods of manufacturing semiconductor devices
CA888442A (en) Methods of manufacturing semiconductor devices
CA962559A (en) Manufacture of semi-conductor monocrystals
CA885144A (en) Method of manufacturing semiconductor devices
CA918305A (en) Method of manufacturing semiconductor devices