JPS5234193B2 - - Google Patents

Info

Publication number
JPS5234193B2
JPS5234193B2 JP10483972A JP10483972A JPS5234193B2 JP S5234193 B2 JPS5234193 B2 JP S5234193B2 JP 10483972 A JP10483972 A JP 10483972A JP 10483972 A JP10483972 A JP 10483972A JP S5234193 B2 JPS5234193 B2 JP S5234193B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10483972A
Other languages
Japanese (ja)
Other versions
JPS4850677A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4850677A publication Critical patent/JPS4850677A/ja
Publication of JPS5234193B2 publication Critical patent/JPS5234193B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
JP10483972A 1971-10-20 1972-10-19 Expired JPS5234193B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19071971A 1971-10-20 1971-10-20

Publications (2)

Publication Number Publication Date
JPS4850677A JPS4850677A (en) 1973-07-17
JPS5234193B2 true JPS5234193B2 (en) 1977-09-01

Family

ID=22702482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10483972A Expired JPS5234193B2 (en) 1971-10-20 1972-10-19

Country Status (5)

Country Link
JP (1) JPS5234193B2 (en)
CA (1) CA969290A (en)
DE (1) DE2250570A1 (en)
GB (1) GB1384153A (en)
IT (1) IT968985B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100949U (en) * 1980-12-09 1982-06-21

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258360A (en) * 1975-11-10 1977-05-13 Toshiba Corp Production of semiconductor device
NL7612883A (en) * 1976-11-19 1978-05-23 Philips Nv SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
GB8507624D0 (en) * 1985-03-23 1985-05-01 Standard Telephones Cables Ltd Semiconductor devices
JPH07101694B2 (en) * 1989-02-08 1995-11-01 株式会社日立製作所 Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100949U (en) * 1980-12-09 1982-06-21

Also Published As

Publication number Publication date
DE2250570A1 (en) 1973-04-26
GB1384153A (en) 1975-02-19
IT968985B (en) 1974-03-20
JPS4850677A (en) 1973-07-17
CA969290A (en) 1975-06-10

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