GB1384153A - Fabrication of semiconductor devices incorporating polycrystalline silicon - Google Patents
Fabrication of semiconductor devices incorporating polycrystalline siliconInfo
- Publication number
- GB1384153A GB1384153A GB4721772A GB4721772A GB1384153A GB 1384153 A GB1384153 A GB 1384153A GB 4721772 A GB4721772 A GB 4721772A GB 4721772 A GB4721772 A GB 4721772A GB 1384153 A GB1384153 A GB 1384153A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- semi
- hydrogen
- deposited
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052710 silicon Inorganic materials 0.000 abstract 8
- 239000010703 silicon Substances 0.000 abstract 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 4
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910000085 borane Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1384153 Semi-conductor devices RCA CORPORATION 12 Oct 1972 [20 Oct 1971] 47217/72 Heading H1K In the manufacture of a semi-conductor device silicon is vapour deposited on a substrate maintained at a temperature less than 700‹ C. so as to be insulating (10<12> ohm. cm. resistivity) and is then annealed at about 1100‹C. to convert it into semi-conductor form, dopant atoms being incorporated in the layer at some stage. The substrate may be of quartz, ceramic, sapphire, spinel, silicon or germanium with or without a coating of metal, semi-conductor oxide or nitride. As described the silicon is deposited at a rate of 2Á/hour from a mixture of silane, hydrogen and a source of dopant (arsine or borane) on silicon held at 600‹ C. in a tube which has been purged first with nitrogen and then hydrogen and is purged after deposition with hydrogen. It is annealed by heating to 1100‹ C. in hydrogen. Typically the process is used in making an integrated circuit comprising a bipolar transistor and an IGFET. After forming the source and drain of the IGFET and base and collector of the bipolar transistor in a P type silicon wafer by conventional diffusion the overall oxide layer is apertured over the base region and the insulating silicon, containing 8 x 10<15> atoms/c.c. of arsenic is deposited to a thickness of 1Á and then, if desired, overlaid with a 3000A layer of silicon nitride or dioxide to prevent subsequent outdiffusion of the arsenic. Annealing for ¢ hour in nitrogen at 1100‹ C. renders the deposited silicon conductive and causes arsenic to diffuse therefrom to form the emitter region. The silicon is then shaped by photolithography using the nitride or dioxide as an etch mask, to form the emitter electrode of the transistor, the gate of the IGFET and track interconnecting them. Aluminium contacts are then provided conventionally on the remaining regions of the devices.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19071971A | 1971-10-20 | 1971-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1384153A true GB1384153A (en) | 1975-02-19 |
Family
ID=22702482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4721772A Expired GB1384153A (en) | 1971-10-20 | 1972-10-12 | Fabrication of semiconductor devices incorporating polycrystalline silicon |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5234193B2 (en) |
| CA (1) | CA969290A (en) |
| DE (1) | DE2250570A1 (en) |
| GB (1) | GB1384153A (en) |
| IT (1) | IT968985B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5258360A (en) * | 1975-11-10 | 1977-05-13 | Toshiba Corp | Production of semiconductor device |
| NL7612883A (en) * | 1976-11-19 | 1978-05-23 | Philips Nv | SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS. |
| JPS5423386A (en) * | 1977-07-22 | 1979-02-21 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS57100949U (en) * | 1980-12-09 | 1982-06-21 | ||
| GB8507624D0 (en) * | 1985-03-23 | 1985-05-01 | Standard Telephones Cables Ltd | Semiconductor devices |
| JPH07101694B2 (en) * | 1989-02-08 | 1995-11-01 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
-
1972
- 1972-09-20 CA CA152,188A patent/CA969290A/en not_active Expired
- 1972-10-12 GB GB4721772A patent/GB1384153A/en not_active Expired
- 1972-10-14 DE DE19722250570 patent/DE2250570A1/en active Pending
- 1972-10-16 IT IT3053172A patent/IT968985B/en active
- 1972-10-19 JP JP10483972A patent/JPS5234193B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5234193B2 (en) | 1977-09-01 |
| JPS4850677A (en) | 1973-07-17 |
| CA969290A (en) | 1975-06-10 |
| IT968985B (en) | 1974-03-20 |
| DE2250570A1 (en) | 1973-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |