NL7604493A - Bipolaire halfgeleiderinrichting. - Google Patents

Bipolaire halfgeleiderinrichting.

Info

Publication number
NL7604493A
NL7604493A NL7604493A NL7604493A NL7604493A NL 7604493 A NL7604493 A NL 7604493A NL 7604493 A NL7604493 A NL 7604493A NL 7604493 A NL7604493 A NL 7604493A NL 7604493 A NL7604493 A NL 7604493A
Authority
NL
Netherlands
Prior art keywords
conductor device
bipolar semi
bipolar
semi
conductor
Prior art date
Application number
NL7604493A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL7604493A publication Critical patent/NL7604493A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905Plural dram cells share common contact or common trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
NL7604493A 1975-04-30 1976-04-27 Bipolaire halfgeleiderinrichting. NL7604493A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50052733A JPS51128269A (en) 1975-04-30 1975-04-30 Semiconductor unit

Publications (1)

Publication Number Publication Date
NL7604493A true NL7604493A (nl) 1976-11-02

Family

ID=12923118

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7604493A NL7604493A (nl) 1975-04-30 1976-04-27 Bipolaire halfgeleiderinrichting.

Country Status (6)

Country Link
US (1) US4080619A (nl)
JP (1) JPS51128269A (nl)
DE (1) DE2618965A1 (nl)
FR (1) FR2309983A1 (nl)
GB (1) GB1524592A (nl)
NL (1) NL7604493A (nl)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose
US4161744A (en) * 1977-05-23 1979-07-17 Varo Semiconductor, Inc. Passivated semiconductor device and method of making same
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
CA1136773A (en) * 1978-08-14 1982-11-30 Norikazu Ohuchi Semiconductor device
US4364078A (en) * 1978-08-15 1982-12-14 Synertek Edge barrier of polysilicon and metal for integrated circuit chips
JPS5658262A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
US4399449A (en) * 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
FR2640813A1 (fr) * 1988-12-16 1990-06-22 Radiotechnique Compelec Circuit integre presentant un transistor vertical
US5358883A (en) * 1992-02-03 1994-10-25 Motorola, Inc. Lateral bipolar transistor
DE69320033T2 (de) * 1993-06-10 1998-12-03 Cons Ric Microelettronica Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors
US5637908A (en) * 1994-09-28 1997-06-10 Harris Corporation Structure and technique for tailoring effective resistivity of a SIPOS layer by patterning and control of dopant introduction
JP2871530B2 (ja) * 1995-05-10 1999-03-17 日本電気株式会社 半導体装置の製造方法
US5930658A (en) * 1996-11-26 1999-07-27 Advanced Micro Devices, Inc. Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures
US6576547B2 (en) * 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
US6794730B2 (en) * 2000-12-31 2004-09-21 Texas Instruments Incorporated High performance PNP bipolar device fully compatible with CMOS process
JP2009252889A (ja) * 2008-04-03 2009-10-29 Nec Electronics Corp サージ保護素子
JP5477681B2 (ja) * 2008-07-29 2014-04-23 三菱電機株式会社 半導体装置
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
US8704232B2 (en) * 2012-06-12 2014-04-22 Apple Inc. Thin film transistor with increased doping regions
US9065077B2 (en) 2012-06-15 2015-06-23 Apple, Inc. Back channel etch metal-oxide thin film transistor and process
US8987027B2 (en) 2012-08-31 2015-03-24 Apple Inc. Two doping regions in lightly doped drain for thin film transistors and associated doping processes
US9685557B2 (en) 2012-08-31 2017-06-20 Apple Inc. Different lightly doped drain length control for self-align light drain doping process
US8999771B2 (en) 2012-09-28 2015-04-07 Apple Inc. Protection layer for halftone process of third metal
US9201276B2 (en) 2012-10-17 2015-12-01 Apple Inc. Process architecture for color filter array in active matrix liquid crystal display
US9001297B2 (en) 2013-01-29 2015-04-07 Apple Inc. Third metal layer for thin film transistor with reduced defects in liquid crystal display
US9088003B2 (en) 2013-03-06 2015-07-21 Apple Inc. Reducing sheet resistance for common electrode in top emission organic light emitting diode display
JP2017055015A (ja) * 2015-09-11 2017-03-16 株式会社東芝 半導体装置
US11171039B2 (en) * 2018-03-29 2021-11-09 Taiwan Semiconductor Manufacturing Company Ltd. Composite semiconductor substrate, semiconductor device and method for manufacturing the same
CN112284578B (zh) * 2020-12-30 2021-03-12 东南大学 一种mems压力传感器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE300472B (nl) * 1965-03-31 1968-04-29 Asea Ab
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
JPS5314420B2 (nl) * 1973-05-14 1978-05-17
JPS532552B2 (nl) * 1974-03-30 1978-01-28

Also Published As

Publication number Publication date
DE2618965A1 (de) 1976-11-11
US4080619A (en) 1978-03-21
GB1524592A (en) 1978-09-13
JPS51128269A (en) 1976-11-09
FR2309983A1 (fr) 1976-11-26
FR2309983B3 (nl) 1979-01-19

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Legal Events

Date Code Title Description
BV The patent application has lapsed