JP5477681B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5477681B2 JP5477681B2 JP2008195062A JP2008195062A JP5477681B2 JP 5477681 B2 JP5477681 B2 JP 5477681B2 JP 2008195062 A JP2008195062 A JP 2008195062A JP 2008195062 A JP2008195062 A JP 2008195062A JP 5477681 B2 JP5477681 B2 JP 5477681B2
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- 239000004065 semiconductor Substances 0.000 title claims description 73
- 239000000463 material Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 31
- 230000000903 blocking effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 79
- 229910052581 Si3N4 Inorganic materials 0.000 description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 33
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 239000004642 Polyimide Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002542 deteriorative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
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Description
「パワーデバイス・パワーICハンドブック」 電気学会・高性能高機能パワーデバイス・パワーIC調査委員会編、コロナ社、1996年
ここでは、電力用の半導体素子としてIGBTを備えた電力用の半導体装置の一例について説明する。図1に示すように、n型の半導体基板1の第1主表面における第1領域R1には、IGBTのエミッタ電極14aとゲート電極11が形成され、第2主表面にコレクタ電極15が形成されている。また、第1領域R1には、表面から所定の深さにわたりpベース層3が形成され、そのpベース層3の表面からpベース層3内にnソース層4が形成されている。pベース層とpベース層3との間に位置する半導体基板1のn型領域(nドリフト層2)の部分の上に、シリコン酸化膜10を介在させてゲート電極11が形成されている。そのゲート電極11上に層間絶縁膜12を介在させてエミッタ電極14aが形成されている。
W≧(L1+L2)/2×(L1/L2)
を満たすことが好ましい。オーバーコート材が流れ出るのを阻止するには、オーバーコート膜の厚みが厚いほど、溝としてより広い幅Wが必要となる。また、高さL2が高いほど、より狭い幅Wでオーバーコート材が流れ出るのを阻止することができる。
ここでは、電力用の半導体素子としてIGBTを備えた電力用の半導体装置の他の例について説明する。図13に示すように、第2領域R2に位置するAlSi層14bを覆う半絶縁性シリコン窒化膜17aに加えて、第3領域R3に位置する段差部20としてのAlSi層14cの上面上に、半絶縁性シリコン窒化膜17bが形成されている。なお、これ以外の構成については図1に示す半導体装置と同様なので、同一部材には同一符号を付しその説明を省略する。
W≧(L1+L2)/2×(L1/L2)
を満たすように設定されていることで、オーバーコート材がチップの外側へ流れ出るのを阻止して、所望の厚さのオーバーコート膜18を第2領域R2に形成することができ、耐圧特性等が悪化するのを防止することができる。
Claims (4)
- 対向する第1主表面および第2主表面を有する第1導電型の半導体基板と、
前記半導体基板における前記第1主表面の第1領域に形成された第1電極および前記第2主表面に形成された第2電極を含み、前記第1電極と前記第2電極との間で電流が流される電力用半導体素子と、
前記第1領域よりも外側に位置する、前記第1主表面の第2領域に形成された第2導電型のガードリングと、
前記第2領域を覆うように形成された半絶縁性絶縁膜と、
前記半絶縁性絶縁膜の全体を覆うように、前記第2領域に形成された誘電体膜と、
前記第2領域よりも外側に位置する、前記第1主表面の第3領域に、前記半絶縁性絶縁膜とは距離を隔てられるとともに、前記半導体基板との間に前記誘電体膜の部分を介在させないように形成され、前記誘電体膜となる材料が流れ出るのを阻止する流動阻止部と
を備えた、半導体装置。 - 前記流動阻止部は所定の高さの段差部を含む、請求項1記載の半導体装置。
- 前記流動阻止部は、前記段差部として前記第1電極と同じ層から形成された第1段差部を含む、請求項2記載の半導体装置。
- 前記流動阻止部は、前記段差部として前記第1段差部上にさらに形成された、前記半絶縁性絶縁膜と同じ層からなる第2段差部を含む、請求項3記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008195062A JP5477681B2 (ja) | 2008-07-29 | 2008-07-29 | 半導体装置 |
US12/339,702 US8450828B2 (en) | 2008-07-29 | 2008-12-19 | Semiconductor device |
KR1020090019678A KR101055987B1 (ko) | 2008-07-29 | 2009-03-09 | 반도체 장치 |
DE102009014056.5A DE102009014056B4 (de) | 2008-07-29 | 2009-03-20 | Halbleitervorrichtung |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008195062A JP5477681B2 (ja) | 2008-07-29 | 2008-07-29 | 半導体装置 |
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JP2010034306A JP2010034306A (ja) | 2010-02-12 |
JP2010034306A5 JP2010034306A5 (ja) | 2010-12-24 |
JP5477681B2 true JP5477681B2 (ja) | 2014-04-23 |
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US (1) | US8450828B2 (ja) |
JP (1) | JP5477681B2 (ja) |
KR (1) | KR101055987B1 (ja) |
DE (1) | DE102009014056B4 (ja) |
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