JPS55111160A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55111160A
JPS55111160A JP1560880A JP1560880A JPS55111160A JP S55111160 A JPS55111160 A JP S55111160A JP 1560880 A JP1560880 A JP 1560880A JP 1560880 A JP1560880 A JP 1560880A JP S55111160 A JPS55111160 A JP S55111160A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1560880A
Other languages
English (en)
Other versions
JPH0221147B2 (ja
Inventor
Pieeru Rojie Berunaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS55111160A publication Critical patent/JPS55111160A/ja
Publication of JPH0221147B2 publication Critical patent/JPH0221147B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP1560880A 1979-02-14 1980-02-13 Semiconductor device Granted JPS55111160A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7903759A FR2449333A1 (fr) 1979-02-14 1979-02-14 Perfectionnement aux dispositifs semi-conducteurs de type darlington

Publications (2)

Publication Number Publication Date
JPS55111160A true JPS55111160A (en) 1980-08-27
JPH0221147B2 JPH0221147B2 (ja) 1990-05-11

Family

ID=9221964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1560880A Granted JPS55111160A (en) 1979-02-14 1980-02-13 Semiconductor device

Country Status (10)

Country Link
US (1) US4360822A (ja)
JP (1) JPS55111160A (ja)
AU (1) AU5536880A (ja)
DE (1) DE3003911C2 (ja)
FR (1) FR2449333A1 (ja)
GB (1) GB2043342B (ja)
IE (1) IE800257L (ja)
IT (1) IT1140550B (ja)
NL (1) NL8000830A (ja)
SE (1) SE8001042L (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049649U (ja) * 1983-09-14 1985-04-08 関西日本電気株式会社 半導体装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112027A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
JPS59119733A (ja) * 1982-12-24 1984-07-11 Toshiba Corp 半導体装置
US5343071A (en) * 1993-04-28 1994-08-30 Raytheon Company Semiconductor structures having dual surface via holes
US6469882B1 (en) 2001-10-31 2002-10-22 General Electric Company Current transformer initial condition correction

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126775A (en) * 1975-04-25 1976-11-05 Iwatsu Electric Co Ltd Semiconductor unit manufacturing process
JPS5294779A (en) * 1976-02-04 1977-08-09 Mitsubishi Electric Corp Semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device
US3659160A (en) * 1970-02-13 1972-04-25 Texas Instruments Inc Integrated circuit process utilizing orientation dependent silicon etch
NL7307527A (ja) * 1973-05-30 1974-12-03
US4011580A (en) * 1973-05-30 1977-03-08 U.S. Philips Corporation Integrated circuit
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement
US4057894A (en) * 1976-02-09 1977-11-15 Rca Corporation Controllably valued resistor
US4118728A (en) * 1976-09-03 1978-10-03 Fairchild Camera And Instrument Corporation Integrated circuit structures utilizing conductive buried regions
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose
FR2377706A1 (fr) * 1977-01-12 1978-08-11 Radiotechnique Compelec Dispositif semi-conducteur integre du type darlington et son procede de fabrication
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126775A (en) * 1975-04-25 1976-11-05 Iwatsu Electric Co Ltd Semiconductor unit manufacturing process
JPS5294779A (en) * 1976-02-04 1977-08-09 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049649U (ja) * 1983-09-14 1985-04-08 関西日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
GB2043342A (en) 1980-10-01
FR2449333B1 (ja) 1982-06-04
SE8001042L (sv) 1980-08-15
AU5536880A (en) 1980-08-21
DE3003911A1 (de) 1980-08-21
NL8000830A (nl) 1980-08-18
JPH0221147B2 (ja) 1990-05-11
IE800257L (en) 1980-08-14
IT1140550B (it) 1986-10-01
IT8019838A0 (it) 1980-02-11
FR2449333A1 (fr) 1980-09-12
US4360822A (en) 1982-11-23
GB2043342B (en) 1983-03-16
DE3003911C2 (de) 1985-07-04

Similar Documents

Publication Publication Date Title
JPS55118651A (en) Semiconductor device
JPS55133562A (en) Semiconductor device
GB2013029B (en) Semiconductor device
EP0023782A3 (en) Semiconductor device
JPS5637680A (en) Semiconductor device
GB2013028B (en) Semiconductor device
JPS567466A (en) Selffalignment semiconductor device
JPS55140272A (en) Semiconductor device
JPS567450A (en) Semiconductor device
JPS54152881A (en) Semiconductor device
JPS567465A (en) Semiconductor device
DE3071218D1 (en) Integrated semiconductor devices
JPS54141592A (en) Semiconductor device
JPS54133090A (en) Semiconductor device
JPS54144874A (en) Semiconductor device
JPS5687395A (en) Semiconductor device
DE3071242D1 (en) Semiconductor device
JPS55162248A (en) Semiconductor device
JPS5666049A (en) Semiconductor device
GB2018511B (en) Semiconductor device
GB2061001B (en) Semiconductor device
JPS5676581A (en) Semiconductor device
DE3066946D1 (en) Semiconductor master-slice device
DE3071877D1 (en) Semiconductor device
GB2043343B (en) Semiconductor device