GB1448482A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1448482A
GB1448482A GB2150173A GB2150173A GB1448482A GB 1448482 A GB1448482 A GB 1448482A GB 2150173 A GB2150173 A GB 2150173A GB 2150173 A GB2150173 A GB 2150173A GB 1448482 A GB1448482 A GB 1448482A
Authority
GB
United Kingdom
Prior art keywords
layer
ohm
region
resistivity
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2150173A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB2150173A priority Critical patent/GB1448482A/en
Publication of GB1448482A publication Critical patent/GB1448482A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Abstract

1448482 Semi-conductor devices FERRANTI Ltd 3 May 1974 [5 May 1973] 21501/73 Heading H1K A semi-conductor device has a Schottky barrier 10 at the interface between one region 11 of monocrystalline silicon with a resistivity greater than 0À1 ohm-cm. and another region 13 of polycrystalline silicon with a resistivity less than 1À0 ohm-cm. The layer 13 is deposited from a reaction atmosphere including silane at 800‹ C. through an aperture 14 in a silicon oxide passivating layer 15 and preferably has a resistivity of 0À01 ohm-cm. The layer 13 may be of P-type conductivity and the region 11 of N- type or the layers may be of the same type. A deposited metal electrode 17 makes ohmic contact with the layer 13.
GB2150173A 1973-05-05 1973-05-05 Semiconductor devices Expired GB1448482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2150173A GB1448482A (en) 1973-05-05 1973-05-05 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2150173A GB1448482A (en) 1973-05-05 1973-05-05 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1448482A true GB1448482A (en) 1976-09-08

Family

ID=10164008

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2150173A Expired GB1448482A (en) 1973-05-05 1973-05-05 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB1448482A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2491260A1 (en) * 1980-09-30 1982-04-02 Nippon Telegraph & Telephone COMPOSITE LAYER ELECTRODE AND SEMICONDUCTOR DEVICE PROVIDED WITH SAID ELECTRODE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2491260A1 (en) * 1980-09-30 1982-04-02 Nippon Telegraph & Telephone COMPOSITE LAYER ELECTRODE AND SEMICONDUCTOR DEVICE PROVIDED WITH SAID ELECTRODE

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee