GB1209647A - Electro-mechanical transducer element - Google Patents

Electro-mechanical transducer element

Info

Publication number
GB1209647A
GB1209647A GB5209167A GB5209167A GB1209647A GB 1209647 A GB1209647 A GB 1209647A GB 5209167 A GB5209167 A GB 5209167A GB 5209167 A GB5209167 A GB 5209167A GB 1209647 A GB1209647 A GB 1209647A
Authority
GB
United Kingdom
Prior art keywords
pressure
semi
nov
gold
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5209167A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1209647A publication Critical patent/GB1209647A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

1,209,647. Heterojunction pressure transducers. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 15 Nov., 1967 [28 Nov., 1966 (2)], No. 52091/67. Heading H1K. A pressure transducer has pressure applied to a semi-conductor heterojunction which incorporates deep level impurities to enhance its sensitivity, the electrical output being taken across the junction from ohmic or rectifying contacts. As shown, a 20 ohm/cm. N-type silicon body 11 bears a vapour-deposited layer of gallium arsenide. Gold (a deep level impurity) is diffused into the junction region from both sides of the structure. Ohmic contact is made to the silicon by gold-antimony and to the gallium arsenide by tin. Pressure is applied by a rod 15. Alternative semi-conductors include germanium, gallium antimonide, indium arsenide and cadmium sulphide. Reactions in the vapour phase or in the liquid phase may be used to deposit semi-conductor layers.
GB5209167A 1966-11-28 1967-11-15 Electro-mechanical transducer element Expired GB1209647A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7855066 1966-11-28
JP7855166 1966-11-28

Publications (1)

Publication Number Publication Date
GB1209647A true GB1209647A (en) 1970-10-21

Family

ID=26419610

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5209167A Expired GB1209647A (en) 1966-11-28 1967-11-15 Electro-mechanical transducer element

Country Status (3)

Country Link
DE (1) DE1648625B2 (en)
GB (1) GB1209647A (en)
NL (1) NL152741B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2064873B (en) * 1979-11-26 1984-09-05 Eventoff Franklin Neal Pressure sensitive electric switch
DE4238545A1 (en) * 1992-11-14 1994-05-19 Daimler Benz Ag Pressure sensor e.g. for diesel engine, high-pressure lines or industrial processes - comprises heterostructure semiconductor diode with double barrier resonant tunnel or simple barrier tunnel structure

Also Published As

Publication number Publication date
NL6716010A (en) 1968-05-29
DE1648625A1 (en) 1971-02-25
NL152741B (en) 1977-03-15
DE1648625B2 (en) 1971-10-21

Similar Documents

Publication Publication Date Title
GB783647A (en) Improvements in or relating to barrier-layer systems
GB1060208A (en) Avalanche transistor
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
GB1337283A (en) Method of manufacturing a semiconductor device
GB995850A (en) Piezoelectric devices
GB1175049A (en) Controllable tunnel diode
GB1181986A (en) A Semiconductor Device
GB1209647A (en) Electro-mechanical transducer element
GB1242006A (en) Improvements in and relating to semiconductor radiation-detectors
GB1507701A (en) Semiconductor devices
GB1108774A (en) Transistors
GB989205A (en) Improvements in or relating to semi-conductor structures
GB1155978A (en) Pressure-Responsive Semiconductor Device.
GB1197315A (en) Semiconductor Device
GB1335037A (en) Field effect transistor
GB1079309A (en) Semiconductor rectifiers
GB1188879A (en) Planar Transistor
GB1229385A (en)
GB1390039A (en) Mechano electrical transducer device
GB967588A (en) Improvements relating to semiconductor devices
GB1193716A (en) Improvements in and relating to Semiconductor Devices
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1252565A (en)
FR1324666A (en) Formation of a semiconductor device
GB1005070A (en) Improvements in or relating to semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee