GB995850A - Piezoelectric devices - Google Patents

Piezoelectric devices

Info

Publication number
GB995850A
GB995850A GB34661/61A GB3466161A GB995850A GB 995850 A GB995850 A GB 995850A GB 34661/61 A GB34661/61 A GB 34661/61A GB 3466161 A GB3466161 A GB 3466161A GB 995850 A GB995850 A GB 995850A
Authority
GB
United Kingdom
Prior art keywords
crystal
depletion layer
semi
face
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34661/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB995850A publication Critical patent/GB995850A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00—Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/06—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
    • H03D3/16—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of electromechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/133—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials for electromechanical delay lines or filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30—Time-delay networks
    • H03H9/36—Time-delay networks with non-adjustable delay time

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

995,850. Electromechanical delay lines. WESTERN ELECTRIC CO. Inc. Sept. 27, 1961 [Oct. 25, 1960], No. 34661/61. Heading H3U. [Also in Division H1] A depletion layer in a semi-conductive crystal is used as the piezo-electric transducer of a delay line. Groups III-V and Groups II-VI class semi-conductor materials provide suitable crystals. As shown, a crystal 10 of n-type GaAs is provided with a gold electrode 11 on a polished 110 face, the electrode forming a non-ohmic contact providing a depletion layer 16 which varies in thickness according to the magnitude of a reverse-bias source 15. The depletion layer may alternatively be provided by a p-n junction within the crystal. An ohmic earth contact 14 is formed on the 100 face of the crystal. The resonant frequency of the device depends upon the thickness of the depletion layer and may be of the order of hundreds of megacycles. Two such resonators are formed on the ends of a body 10 to form a delay line. The intermediate portion of the line need not be semi-conductive.
GB34661/61A 1960-10-25 1961-09-27 Piezoelectric devices Expired GB995850A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64808A US3185935A (en) 1960-10-25 1960-10-25 Piezoelectric transducer

Publications (1)

Publication Number Publication Date
GB995850A true GB995850A (en) 1965-06-23

Family

ID=22058394

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34661/61A Expired GB995850A (en) 1960-10-25 1961-09-27 Piezoelectric devices

Country Status (5)

Country Link
US (1) US3185935A (en)
BE (1) BE609136A (en)
DE (1) DE1272388B (en)
GB (1) GB995850A (en)
NL (1) NL269131A (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE633043A (en) * 1962-05-31
US3254231A (en) * 1962-07-10 1966-05-31 Philco Corp Frequency changer employing a moving sonic-energy-reflecting boundary in a semiconductor medium
US3283271A (en) * 1963-09-30 1966-11-01 Raytheon Co Notched semiconductor junction strain transducer
US3251009A (en) * 1963-05-28 1966-05-10 Ibm Semiconductor ultrasonic signal-delay apparatus utilizing integral p-n junctions as electromechanical transducers
US3277405A (en) * 1963-09-30 1966-10-04 Raytheon Co Strain filter utilizing semiconductor device in mechanical oscillation
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
FR1486264A (en) * 1965-07-08 1967-10-05
US3401449A (en) * 1965-10-24 1968-09-17 Texas Instruments Inc Method of fabricating a metal base transistor
US3414779A (en) * 1965-12-08 1968-12-03 Northern Electric Co Integrated parametric amplifier consisting of a material with both semiconductive and piezoelectric properties
DE1614829C3 (en) * 1967-06-22 1974-04-04 Telefunken Patentverwertungs Gmbh, 7900 Ulm Method for manufacturing a semiconductor component
US3568103A (en) * 1968-09-06 1971-03-02 Nasa A solid state acoustic variable time delay line
US3652905A (en) * 1970-05-26 1972-03-28 Westinghouse Electric Corp Schottky barrier power rectifier
WO2008013982A1 (en) * 2006-07-28 2008-01-31 California Institute Of Technology Nano electromechanical resonator

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2553491A (en) * 1950-04-27 1951-05-15 Bell Telephone Labor Inc Acoustic transducer utilizing semiconductors
US2941092A (en) * 1955-10-25 1960-06-14 Philips Corp Pulse delay circuit
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
FR1210880A (en) * 1958-08-29 1960-03-11 Improvements to field-effect transistors
US3060327A (en) * 1959-07-02 1962-10-23 Bell Telephone Labor Inc Transistor having emitter reversebiased beyond breakdown and collector forward-biased for majority carrier operation

Also Published As

Publication number Publication date
BE609136A (en) 1962-02-01
DE1272388B (en) 1968-07-11
US3185935A (en) 1965-05-25
NL269131A (en)

Similar Documents

Publication Publication Date Title
GB995850A (en) Piezoelectric devices
GB1222837A (en) Thin film piezoelectric device
GB1021237A (en) Ultrasonic wave transmission device
GB945738A (en) Miniature semiconductor devices and methods of producing same
GB879977A (en) Improvements in semi-conductor devices
GB1311178A (en) Semiconductor devices
GB1324069A (en) Parametric devices
GB1318819A (en) Superconducting devices
US3251009A (en) Semiconductor ultrasonic signal-delay apparatus utilizing integral p-n junctions as electromechanical transducers
SE338594B (en)
GB1234363A (en)
GB1073347A (en) Improvements in or relating to elasto-resistive elements
GB902425A (en) Improvements in asymmetrically conductive device
US3406350A (en) Ultrasonic amplifier device
GB1070194A (en) Improvements in and relating to electrical delay lines
GB1238034A (en)
US3270555A (en) Stress sensitive tunnel diode transducer
GB1513757A (en) Cathode for gunn diode
GB1209647A (en) Electro-mechanical transducer element
GB958244A (en) Semiconductor device
GB1328649A (en) Method of generating spontaneous elastic-spin oscillations in ferromagnetopiezoelectric semiconductor circuits
GB948178A (en) Narrow band notch filter
GB1094677A (en) Integral heater piezoelectric devices
GB1234852A (en) Improvements in or relating to semi-conductor transducers
GB1273804A (en) Transverse piezoresistance and pinch effect electromechanical transducers