GB1073347A - Improvements in or relating to elasto-resistive elements - Google Patents

Improvements in or relating to elasto-resistive elements

Info

Publication number
GB1073347A
GB1073347A GB4052464A GB4052464A GB1073347A GB 1073347 A GB1073347 A GB 1073347A GB 4052464 A GB4052464 A GB 4052464A GB 4052464 A GB4052464 A GB 4052464A GB 1073347 A GB1073347 A GB 1073347A
Authority
GB
United Kingdom
Prior art keywords
elasto
relating
insulator
resistive elements
piezo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4052464A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anritsu Corp
Original Assignee
Anritsu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anritsu Corp filed Critical Anritsu Corp
Publication of GB1073347A publication Critical patent/GB1073347A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H01C10/10—Adjustable resistors adjustable by mechanical pressure or force

Abstract

1,073,347. Piezo-resistive devices. ANRITSU ELECTRIC CO. Ltd. Oct. 5, 1964 [Oct. 4, 1963], No. 40524/64. Heading H1K. A polycrystalline layer 3 of a piezo-resistive material (e.g. silicon, germanium, or an A III B v compound) is vacuumdeposited on an insulator 4. Two such layers 3 on opposite faces of the insulator 4 may be connected in a bridge circuit (Fig. 4) by means of electrodes 2, one end of the insulator 4 being held rigidly at 5.
GB4052464A 1963-10-04 1964-10-05 Improvements in or relating to elasto-resistive elements Expired GB1073347A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5340163 1963-10-04

Publications (1)

Publication Number Publication Date
GB1073347A true GB1073347A (en) 1967-06-21

Family

ID=12941789

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4052464A Expired GB1073347A (en) 1963-10-04 1964-10-05 Improvements in or relating to elasto-resistive elements

Country Status (2)

Country Link
DE (1) DE1465112A1 (en)
GB (1) GB1073347A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145284A (en) * 1983-08-18 1985-03-20 Transamerica Delaval Inc Processes for applying a semiconductor material to a substrate
WO2000079546A1 (en) * 1999-06-22 2000-12-28 Peratech Ltd Conductive structures
US7186356B2 (en) 2001-06-07 2007-03-06 Peratech Ltd. Analytical device
CN114141461A (en) * 2021-10-25 2022-03-04 深圳技术大学 Flexible electronic device manufacturing method based on femtosecond laser and flexible strain sensor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828607C3 (en) * 1977-06-29 1982-08-12 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Semiconductor device
US4236832A (en) * 1977-06-29 1980-12-02 Tokyo Shibaura Denki Kabushiki Kaisha Strain insensitive integrated circuit resistor pair
JPS5439584A (en) * 1977-07-14 1979-03-27 Toshiba Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145284A (en) * 1983-08-18 1985-03-20 Transamerica Delaval Inc Processes for applying a semiconductor material to a substrate
WO2000079546A1 (en) * 1999-06-22 2000-12-28 Peratech Ltd Conductive structures
US7186356B2 (en) 2001-06-07 2007-03-06 Peratech Ltd. Analytical device
CN114141461A (en) * 2021-10-25 2022-03-04 深圳技术大学 Flexible electronic device manufacturing method based on femtosecond laser and flexible strain sensor
CN114141461B (en) * 2021-10-25 2022-08-05 深圳技术大学 Flexible electronic device manufacturing method based on femtosecond laser and flexible strain sensor

Also Published As

Publication number Publication date
DE1465112A1 (en) 1969-01-23

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