JPS5439584A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5439584A
JPS5439584A JP8359477A JP8359477A JPS5439584A JP S5439584 A JPS5439584 A JP S5439584A JP 8359477 A JP8359477 A JP 8359477A JP 8359477 A JP8359477 A JP 8359477A JP S5439584 A JPS5439584 A JP S5439584A
Authority
JP
Japan
Prior art keywords
resistive element
semiconductor device
parallel
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8359477A
Other languages
Japanese (ja)
Inventor
Shigeru Komatsu
Satoshi Takahashi
Koji Suzuki
Masao Wakatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8359477A priority Critical patent/JPS5439584A/en
Priority to GB7828099A priority patent/GB2001195B/en
Priority to DE19782828606 priority patent/DE2828606C3/en
Publication of JPS5439584A publication Critical patent/JPS5439584A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PURPOSE: To avoid the variation in the resistance value in resin sealing, by using the substrate having parallel crystal arrangement with (110) plane and by taking parallel or orthogonal to the azimuth of 45° from the (001) crustal axis for the current direction flowing to the resistive element, in forming the N type resistive element in the P type semiconductor substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP8359477A 1977-07-14 1977-07-14 Semiconductor device Pending JPS5439584A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8359477A JPS5439584A (en) 1977-07-14 1977-07-14 Semiconductor device
GB7828099A GB2001195B (en) 1977-07-14 1978-06-28 Semiconductor device
DE19782828606 DE2828606C3 (en) 1977-07-14 1978-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8359477A JPS5439584A (en) 1977-07-14 1977-07-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5439584A true JPS5439584A (en) 1979-03-27

Family

ID=13806805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8359477A Pending JPS5439584A (en) 1977-07-14 1977-07-14 Semiconductor device

Country Status (3)

Country Link
JP (1) JPS5439584A (en)
DE (1) DE2828606C3 (en)
GB (1) GB2001195B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122134A (en) * 1980-02-29 1981-09-25 Toshiba Corp Resin-sealed type semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1465112A1 (en) * 1963-10-04 1969-01-23 Anritsu Electric Company Ltd Semiconductor layers deposited in a vacuum for elasto resistance elements
GB1249317A (en) * 1968-11-19 1971-10-13 Mullard Ltd Semiconductor devices

Also Published As

Publication number Publication date
GB2001195A (en) 1979-01-24
DE2828606C3 (en) 1981-10-01
DE2828606B2 (en) 1981-01-29
DE2828606A1 (en) 1979-01-18
GB2001195B (en) 1982-01-20

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