CN114141461A - Flexible electronic device manufacturing method based on femtosecond laser and flexible strain sensor - Google Patents
Flexible electronic device manufacturing method based on femtosecond laser and flexible strain sensor Download PDFInfo
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- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 76
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- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 238000002679 ablation Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 17
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 14
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000005441 electronic device fabrication Methods 0.000 claims description 9
- 238000000608 laser ablation Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
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- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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Abstract
The invention discloses a femtosecond laser-based flexible electronic device preparation method and a flexible strain sensor, wherein the femtosecond laser-based flexible electronic device preparation method comprises the following steps: performing ablation on the flexible substrate by adopting femtosecond laser according to a preset pattern to enable an area which is not ablated to form the preset pattern; dripping liquid metal on the ablated flexible substrate; and removing the liquid metal which is not attached to the flexible substrate to obtain the electronic device corresponding to the preset pattern. The invention can realize that the liquid metal is used for forming the specific preset pattern on the flexible substrate, thereby obtaining the effect of the electronic device with high flexibility.
Description
Technical Field
The invention relates to the technical field of flexible electronic devices, in particular to a femtosecond laser-based flexible electronic device preparation method and a flexible strain sensor.
Background
The flexibility of the electronic device becomes an important development direction of the electronic device, and the flexibility degree of the electronic device is required to be higher particularly in the aspects of human motion detection and the like. However, the existing electronic devices are poor in flexibility, and it is difficult to meet the requirements of the next generation sensors in terms of flexibility.
Thus, there is still a need for improvement and development of the prior art.
Disclosure of Invention
The invention provides a method for manufacturing a flexible electronic device based on femtosecond laser and a flexible strain sensor, aiming at solving the problem of poor flexibility of the electronic device in the prior art.
The technical scheme of the invention is as follows:
in a first aspect of the present invention, a femtosecond laser-based flexible electronic device manufacturing method is provided, wherein the femtosecond laser-based flexible electronic device manufacturing method includes:
performing ablation on the flexible substrate by adopting femtosecond laser according to a preset pattern to enable an area which is not ablated to form the preset pattern;
dripping liquid metal on the ablated flexible substrate;
and removing the liquid metal which is not attached to the flexible substrate to obtain the electronic device corresponding to the preset pattern.
The preparation method of the femtosecond laser-based flexible electronic device is characterized in that the material of the flexible substrate is polydimethylsiloxane.
The preparation method of the flexible electronic device based on the femtosecond laser comprises the step of preparing the liquid metal, namely the liquid gallium-based metal.
The method for preparing the femtosecond laser-based flexible electronic device comprises the following steps of after liquid metal is dripped on the ablated flexible substrate:
brushing the surface of the flexible substrate such that the liquid metal is dispersed on the flexible substrate.
The method for preparing the femtosecond laser-based flexible electronic device comprises the step of carrying out femtosecond laser ablation on the flexible substrate, wherein the average distance of laser pulse ablation points is less than 8 micrometers.
In a second aspect of the present invention, a flexible electronic device is provided, wherein the flexible electronic device is manufactured by using the femtosecond laser-based flexible electronic device manufacturing method provided in the first aspect of the present invention.
In a third aspect of the present invention, a flexible strain sensor is provided, wherein the flexible strain sensor includes a first resistor, the first resistor is the flexible electronic device provided in the second aspect of the present invention, and the first resistor is used for generating a resistance value change when being stressed.
The flexible strain sensor further comprises a second resistor combination, and the second resistor combination and the first electrons form a Wheatstone bridge.
The flexible strain sensor, wherein the second resistor combination includes three second resistors, and the second resistors are flexible electronic devices provided by the second aspect of the present invention; the flexible strain sensor further comprises a stress isolation layer, and the first resistor and the second resistor are respectively arranged on two sides of the stress isolation layer.
The invention has the technical effects that: according to the method for preparing the flexible electronic device based on the femtosecond laser, the flexible material is processed by the femtosecond laser, ablation is carried out on the processed flexible material, a preset pattern is formed in an area which is not ablated on the flexible material, then liquid metal is dripped on the ablated flexible substrate, the microstructure on the surface of the flexible material becomes rough after the flexible material is ablated by the laser, the liquid metal is repelled, the liquid metal on the ablated area cannot be attached and can be easily removed after the liquid metal is dripped, and therefore the specific preset pattern is formed on the flexible substrate by using the liquid metal, and the effect of the electronic device with high flexibility is achieved.
Drawings
FIG. 1 is a flow chart of an embodiment of a femtosecond laser-based flexible electronic device fabrication method provided by the present invention;
FIG. 2 is a schematic view of a femtosecond laser processing system;
FIG. 3 is a schematic view of the surface of a flexible substrate not ablated by a laser contacting a liquid metal in an embodiment of the femtosecond laser-based flexible electronic device fabrication method provided by the invention;
FIG. 4 is a schematic view of the surface of the flexible substrate in contact with liquid metal after laser ablation in an embodiment of the femtosecond laser-based flexible electronic device manufacturing method provided by the invention;
FIG. 5 is a schematic illustration of the surface of a flexible substrate that has not been laser ablated and the adhesion of the flexible substrate to a liquid metal after laser ablation in an embodiment of a femtosecond laser-based flexible electronic device fabrication method provided by the present invention;
FIG. 6 is a schematic view of the ablation of the surface of a flexible substrate in an embodiment of the femtosecond laser-based flexible electronic device fabrication method provided by the invention;
FIG. 7 is a schematic view illustrating a process of ablating a predetermined pattern on a surface of a flexible substrate in an embodiment of a femtosecond laser-based method for manufacturing a flexible electronic device according to the present invention;
FIG. 8 is a schematic view of dropping liquid metal onto an ablated flexible substrate in an embodiment of a femtosecond laser-based flexible electronic device fabrication method provided by the present invention;
FIG. 9 is a schematic view showing the effect of removing liquid metal not attached to a flexible substrate in an embodiment of a femtosecond laser-based method for manufacturing a flexible electronic device according to the present invention;
FIG. 10 is a schematic view of an electronic device fabricated in an embodiment of a femtosecond laser-based flexible electronic device fabrication method provided by the present invention;
FIG. 11 is a schematic structural view of an embodiment of a flexible sensor provided by the present invention;
FIG. 12 is a cross-sectional view of an embodiment of a flexible sensor provided by the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example one
Referring to fig. 1, fig. 1 is a flowchart illustrating a method for fabricating a femtosecond laser-based flexible electronic device according to an embodiment of the present invention.
As shown in fig. 1, the method for manufacturing a femtosecond laser-based flexible electronic device according to this embodiment includes the steps of:
and S100, ablating on the flexible substrate by adopting femtosecond laser according to a preset pattern to enable an area which is not ablated to form the preset pattern.
Most of the conventional electronic devices are mainly made of semiconductor rigid materials, and have poor flexibility, and in order to prepare a flexible electronic device with high flexibility, in this embodiment, a liquid metal is used to form a pattern corresponding to the electronic device on a flexible substrate to prepare the electronic device, such as a resistor, a wire, and the like. The flexible substrate can realize stretching bending, the liquid metal can also realize stretching bending, and the flexible electronic device prepared by the method provided by the embodiment has high flexibility. Specifically, the liquid metal shell is adhered to the flexible substrate by means of the self-oxidation film and keeps the passage, but at the same time, the liquid metal shell is firmly adhered to the substrate due to the ultrahigh adhesion force between the oxide shell of the liquid metal and the substrate, the adhered liquid metal is difficult to remove, and the residual metal residue enables the pattern formed by the adhered liquid metal on the substrate to be different from the preset pattern, so that the preparation precision of the electronic device is strongly influenced. To solve this problem, in the present embodiment, a femtosecond laser is used to process the flexible substrate.
Femtosecond laser processing (femtosecond laser direct writing, FLDW) can produce various patterns on a solid, change the microstructure of the material, and modify the surface roughness. The present invention relates to a method for manufacturing a flexible electronic device, and more particularly, to a method for manufacturing a flexible electronic device based on a femtosecond laser, which is applied to a flexible substrate of an electronic device to be manufactured. As shown in fig. 3 and 4, the liquid metal can be firmly adhered to the non-ablated area by virtue of the oxide shell of the liquid metal, the surface microstructure of the ablated area is changed, the liquid metal is contacted with the surface microstructure of the ablated flexible substrate by virtue of the oxide shell of the liquid metal in a spaced state, when the liquid metal is dripped on the surface of the processed flexible substrate, the liquid metal can be adhered to the non-ablated area, the ablated area can not be adhered with the liquid metal and can be easily removed, and finally, the liquid metal left on the surface of the flexible substrate can accurately form the preset pattern, so that the flexible electronic device to be prepared is obtained.
Specifically, in the present embodiment, the flexible substrate is made of Polydimethylsiloxane (PDMS), which has good flexibility, but it is understood that other materials, such as silicon, copper, titanium, etc., may be used to fabricate the flexible substrate. The liquid metal is liquid gallium-based metal which can be gallium-indium alloy metal, and the room-temperature liquid gallium and gallium-based metal have the advantages of high conductivity, strong ductility, good flexibility, no toxicity and the like.
In order to verify the effectiveness of the method for preparing a femtosecond laser-based flexible electronic device provided in this embodiment, an experiment was performed using a femtosecond laser processing system as shown in fig. 2, a PDMS sample was fixed on a platform controlled by a program, a laser beam was focused on the PDMS sample through an objective lens, and a flexible substrate was ablated by the laser. Alternatively, the power of laser ablation is 20mW, the scanning speed is 8mm/s, and during the experimental verification process, when the surface of the PDMS sample is observed by using an electron microscope during scanning, it can be observed that many submicron/nano particles exist on the surface of the ablated PDMS sample, and the roughness changes. After laser ablation of the PDMS samples, the liquid metal controlled by the syringe needle was moved into contact and then moved away from the surface of the non-ablated and ablated PDMS samples to compare the adhesion of the surface of the non-ablated and ablated PDMS samples to the liquid metal. As shown in fig. 5, after the surface of the PDMS sample is processed by laser, the liquid metal droplet is repelled by the surface micro/nano structure, and the experimental result shows that the laser-processed PDMS surface shows excellent repellence and ultra-low adhesion.
In practical applications, in order to ensure the performance of the manufactured flexible electronic device, the mechanical and chemical durability (such as abrasion resistance, flexibility and corrosion resistance) of the ablated surface of the flexible substrate is important, and in order to verify the mechanical and chemical durability of the liquid metal repellency of the ablated surface of the flexible substrate by the femtosecond laser in the method for manufacturing the femtosecond laser-based flexible electronic device provided by this embodiment, various experiments are used for verification. Specifically, the liquid metal's sliding angle and contact angle can be measured by a contact angle system to measure the repulsion, and in general, when the sliding angle SA is less than 10 and the contact angle CA is greater than 150, the repulsion is referred to as the liquid metal. In the bending experiment, the sliding angle and the contact angle of the metal droplet on the surface of the ablated flexible substrate sample hardly changed obviously after 100 bending cycles. In the abrasion test, the surface of the flexible substrate sample to be ablated is rubbed by abrasive paper, and the contact angle of the liquid metal drop on the surface of the flexible substrate sample to be ablated is always larger than 150 degrees along with the increase of abrasion time, and the sliding angle is kept below 10 degrees. In the corrosion prevention experiment, the ablated flexible substrate sample still maintains great liquid metal repellency after being soaked in HCL, NAOH, NaCl and glucose solution for 4 hours. Experimental results show that the surface of the laser-ablated flexible substrate has strong mechanical and chemical stability for the metal repelling capacity.
The Average Distance (AD) of the ablation points of the laser pulses has great influence on the surface topography of the flexible substrate ablated by the laser, and the number of microstructures and nanostructures on the surface obtained after treatment is reduced along with the increase of the average distance. It was experimentally demonstrated that the distance of the peaks in the microstructure decreased from 0.445 to 0.12 microns as the average distance increased from 2 to 15 microns. When the average distance is less than 8 micrometers, the liquid metal barrier surface with ultralow metal adhesion can be obtained, and the precision requirement of the flexible electronic device preparation can be met. Therefore, when femtosecond laser ablation is performed on the flexible substrate in the present embodiment, the average distance of the ablation points of the laser pulses is below 8 μm.
As shown in fig. 6 and 7, after a portion of the surface of the flexible substrate is ablated by the femtosecond laser, the non-ablated area may form the predetermined pattern. Referring to fig. 1 again, the method for manufacturing a femtosecond laser-based flexible electronic device according to the present embodiment further includes:
and S200, dripping liquid metal on the ablated flexible substrate.
After laser ablation is performed and the preset pattern is formed on the flexible substrate, liquid metal is dripped on the ablated flexible substrate, as shown in fig. 8, in order to ensure that the liquid metal is adhered to an area which is not ablated, in a possible implementation manner, after the liquid metal is dripped, the whole surface of the flexible substrate is brushed, so that the liquid metal is dispersed on the flexible substrate. After the liquid metal is dripped on the ablated flexible substrate, the oxide shell of the liquid metal only wets an ablated flat area, and the liquid metal in the oxide shell of the liquid metal only can contact the peak of the micro/nano structure in the laser ablation area, so that the real contact area between the oxide shell and the rough structure is obviously reduced, and the liquid metal can be easily removed.
S300, removing the liquid metal which is not attached to the flexible substrate to obtain the electronic device corresponding to the preset pattern.
Specifically, the liquid metal that is not attached to the flexible substrate may be removed by air blowing, as shown in fig. 9, after the liquid metal that is not attached to the flexible substrate is removed, the liquid metal is attached to only the non-ablated area of the flexible substrate, and finally the liquid metal forms a predetermined pattern on the flexible substrate, as shown in fig. 10. It should be noted that the pattern formed by the liquid metal on the flexible electronic device may be three-dimensional, that is, the predetermined pattern formed by the liquid metal on the flexible substrate is a shape pattern with a cross section.
As can be seen from the above description, by changing the predetermined pattern, complicated circuit patterns can be successfully implemented to realize the fabrication of various flexible electronic devices.
In summary, according to the method for manufacturing a flexible electronic device based on femtosecond laser provided by the present invention, the femtosecond laser is used to process the flexible material, and the flexible material is ablated to form the predetermined pattern in the non-ablated area of the flexible material, and then the liquid metal is dropped on the ablated flexible substrate, after the flexible material is ablated by the laser, the microstructure of the surface becomes rough, which generates repulsion to the liquid metal, and after the liquid metal is dropped, the liquid metal on the ablated area cannot be attached, and can be easily removed, so that the liquid metal is used to form the specific predetermined pattern on the flexible substrate, and the electronic device with high flexibility is obtained.
Example two
Based on the femtosecond laser-based flexible electronic device preparation method in the first embodiment, the invention also provides a flexible electronic device, and the flexible electronic device is prepared by adopting the femtosecond laser-based flexible electronic device preparation method in the first embodiment.
EXAMPLE III
Based on the embodiment, the invention also provides a flexible strain sensor, a perspective view of the flexible strain sensor is shown in fig. 11, and the flexible strain sensor comprises a first resistor RsensThe first resistor is a flexible electronic device manufactured by the method for manufacturing a flexible electronic device according to one embodiment, and specifically, the first resistor may be manufactured by forming a shape having a certain cross-sectional area and length on a flexible substrate by using a liquid metal. In this embodiment, the first resistor is made of liquid gallium-based metal based on PDMS. The formula for the resistance formed by the metal is:
r is a resistance value, ρ is a density, L is a length, and S is a cross-sectional area, in a possible implementation manner, when the liquid gallium-based metal in the first resistor forms a shape with a length of 70mm and a cross-section of 50 μm × 600nm when no stretching is generated, the initial resistance value of the first resistor when no stretching is generated is about 0.6 ± 0.07k Ω, and it is understood that the shape and the initial resistance value of the first resistor are not limited to the above numbers, and those skilled in the art can adapt the shape and the initial resistance value according to the practical application scenario of the strain sensor.
The first resistor is used for generating resistance value change when being stressed, specifically, a flexible substrate of the first resistor is directly contacted with a measured object and is elongated along with the bending elongation of the measured object, and the liquid metal in the first resistor is also elongated opposite to the substrate so as to change the resistance of the first resistor. When the elongation is less than or equal to 30%, the elongation and the resistance variation amount conform to linear changes, and the measured resistance variation amount and the initial resistance amount conform to the following formula:
wherein R is the initial resistance value of the first resistor, Δ R is the resistance change amount of the first resistor after stress, ε is the stress, v is the Poisson's ratio of the material (liquid metal) of the first resistor, and x0＝Lx/(Lx+Ly)，γ0＝Ly/(Lx+Ly)，LxLength, L, of the liquid metal material of the first resistor in parallel directionyThe length of the liquid metal material of the first resistor in the vertical direction.
In this embodiment, a wheatstone bridge is adopted to accurately measure the resistance value of the first resistor, and specifically, the flexible strain sensor further includes a second resistor combination and a connecting wire, where the second resistor combination and the first electron form a wheatstone bridge through the connecting wire. The second resistor combination comprises three second resistors which are R respectively1、R2、R3The resistance value of each second resistor is a constant value, and the input voltage V of the Wheatstone bridge circuit is obtainedinAn output voltage VoutAnd a second resistor R1、R2、R3A first resistor RsensThe relationship between them is as follows:
therefore, the resistance value of the first resistor can be obtained through the resistance value of the second resistor and the input and output voltages of the Wheatstone bridge circuit, and the received stress is calculated according to the change value of the resistance value of the first resistor, so that the effect of the strain sensor is realized. Experiments show that the ratio of the output voltage to the input voltage of the strain sensor provided by the embodiment is only related to the resistance values of the first resistor and the second resistor, and the voltage change conditions generated when the first resistor is bent and stretched horizontally are the same, so that the strain sensor provided by the embodiment can completely replace a sensor composed of a rigid circuit.
In a possible implementation manner, the wire connecting the second resistor combination and the first resistor is a flexible wire manufactured by using the femtosecond laser based flexible electronic device according to the first embodiment, and the second resistor is also manufactured by using the femtosecond laser based flexible electronic device according to the first embodiment, specifically, as shown in fig. 11, each of the second resistors may be formed by spirally folding a liquid metal with a certain cross-sectional area on a flexible substrate for several times. In order to eliminate the effect that the stretching or bending of the first resistor affects the parameters of the second resistor and thus the output, in this embodiment, as shown in fig. 12, a stress isolation layer 300 is added between the first resistor 100 and the second resistor 200, and the first resistor 100 and the second resistor 200 are connected by a wire 400. The material of the stress isolation layer 300 may be an Ecoflex material, which may prevent the stress received by the first resistor from being transferred to the second resistor combination to affect the accuracy of the strain sensor.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (9)
1. A method for preparing a femtosecond laser-based flexible electronic device is characterized by comprising the following steps:
performing ablation on the flexible substrate by adopting femtosecond laser according to a preset pattern to enable an area which is not ablated to form the preset pattern;
dripping liquid metal on the ablated flexible substrate;
and removing the liquid metal which is not attached to the flexible substrate to obtain the electronic device corresponding to the preset pattern.
2. The femtosecond laser-based flexible electronic device fabrication method according to claim 1, wherein a material of the flexible substrate is polydimethylsiloxane.
3. The femtosecond laser-based flexible electronic device fabrication method according to claim 1, wherein the liquid metal is a liquid gallium-based metal.
4. The femtosecond laser-based flexible electronic device preparation method according to claim 1, wherein after dropping liquid metal on the ablated flexible substrate, the method further comprises:
brushing the surface of the flexible substrate such that the liquid metal is dispersed on the flexible substrate.
5. The femtosecond laser-based flexible electronic device fabrication method according to claim 1, wherein when femtosecond laser ablation is performed on the flexible substrate, an average distance of laser pulse ablation points is 8 μm or less.
6. A flexible electronic device, characterized in that it is manufactured using the femtosecond laser-based flexible electronic device manufacturing method according to any one of claims 1 to 5.
7. A flexible strain sensor comprising a first resistor, the first resistor being the flexible electronic device as claimed in claim 6, the first resistor being adapted to change its resistance when stressed.
8. The flexible strain sensor of claim 7, further comprising a second resistive combination that forms a Wheatstone bridge with the first electronics.
9. The flexible strain sensor of claim 8, wherein the second combination of resistances comprises three second resistances, the second resistances being the flexible electronic device of claim 6; the flexible strain sensor further comprises a stress isolation layer, and the first resistor and the second resistor are respectively arranged on two sides of the stress isolation layer.
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