NL269131A - - Google Patents

Info

Publication number
NL269131A
NL269131A NL269131DA NL269131A NL 269131 A NL269131 A NL 269131A NL 269131D A NL269131D A NL 269131DA NL 269131 A NL269131 A NL 269131A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL269131A publication Critical patent/NL269131A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0644Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/06Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
    • H03D3/16Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of electromechanical resonators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/133Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials for electromechanical delay lines or filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30Time-delay networks
    • H03H9/36Time-delay networks with non-adjustable delay time

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
NL269131D 1960-10-25 NL269131A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64808A US3185935A (en) 1960-10-25 1960-10-25 Piezoelectric transducer

Publications (1)

Publication Number Publication Date
NL269131A true NL269131A (en)

Family

ID=22058394

Family Applications (1)

Application Number Title Priority Date Filing Date
NL269131D NL269131A (en) 1960-10-25

Country Status (5)

Country Link
US (1) US3185935A (en)
BE (1) BE609136A (en)
DE (1) DE1272388B (en)
GB (1) GB995850A (en)
NL (1) NL269131A (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE633043A (en) * 1962-05-31
US3254231A (en) * 1962-07-10 1966-05-31 Philco Corp Frequency changer employing a moving sonic-energy-reflecting boundary in a semiconductor medium
US3283271A (en) * 1963-09-30 1966-11-01 Raytheon Co Notched semiconductor junction strain transducer
US3251009A (en) * 1963-05-28 1966-05-10 Ibm Semiconductor ultrasonic signal-delay apparatus utilizing integral p-n junctions as electromechanical transducers
US3277405A (en) * 1963-09-30 1966-10-04 Raytheon Co Strain filter utilizing semiconductor device in mechanical oscillation
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
FR1486264A (en) * 1965-07-08 1967-10-05
US3401449A (en) * 1965-10-24 1968-09-17 Texas Instruments Inc Method of fabricating a metal base transistor
US3414779A (en) * 1965-12-08 1968-12-03 Northern Electric Co Integrated parametric amplifier consisting of a material with both semiconductive and piezoelectric properties
DE1614829C3 (en) * 1967-06-22 1974-04-04 Telefunken Patentverwertungs Gmbh, 7900 Ulm Method for manufacturing a semiconductor component
US3568103A (en) * 1968-09-06 1971-03-02 Nasa A solid state acoustic variable time delay line
US3652905A (en) * 1970-05-26 1972-03-28 Westinghouse Electric Corp Schottky barrier power rectifier
US8044556B2 (en) * 2006-07-28 2011-10-25 California Institute Of Technology Highly efficient, charge depletion-mediated, voltage-tunable actuation efficiency and resonance frequency of piezoelectric semiconductor nanoelectromechanical systems resonators

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2553491A (en) * 1950-04-27 1951-05-15 Bell Telephone Labor Inc Acoustic transducer utilizing semiconductors
US2941092A (en) * 1955-10-25 1960-06-14 Philips Corp Pulse delay circuit
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
FR1210880A (en) * 1958-08-29 1960-03-11 Improvements to field-effect transistors
US3060327A (en) * 1959-07-02 1962-10-23 Bell Telephone Labor Inc Transistor having emitter reversebiased beyond breakdown and collector forward-biased for majority carrier operation

Also Published As

Publication number Publication date
US3185935A (en) 1965-05-25
BE609136A (en) 1962-02-01
DE1272388B (en) 1968-07-11
GB995850A (en) 1965-06-23

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