GB1234852A - Improvements in or relating to semi-conductor transducers - Google Patents
Improvements in or relating to semi-conductor transducersInfo
- Publication number
- GB1234852A GB1234852A GB1777769A GB1777769A GB1234852A GB 1234852 A GB1234852 A GB 1234852A GB 1777769 A GB1777769 A GB 1777769A GB 1777769 A GB1777769 A GB 1777769A GB 1234852 A GB1234852 A GB 1234852A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contacts
- contact
- magnetic field
- type
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000969 carrier Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Magnetic Heads (AREA)
Abstract
1,234,852. Semi-conductor device. MARCONI CO. Ltd. 8 April, 1969 [16 April, 1968], No. 17777/69. Heading H1K. A semi-conductor transducer for converting varying magnetic field intensities into electric signals comprises a body of N-type semiconductor material having a P-type region formed in one end to which region a contact E is attached, a further contact B attached to the opposite end of the body in ohmic contact with a more highly doped part of the N-type region, and two P-type regions formed on opposite sides of the body, between contacts E and B, and having contacts C1 and C2, so that with no external magnetic field minority carriers injected into the N-type body from contact E pass equally to contacts C1 and C2, but with an impressed magnetic field this balance is disturbed. The body may be of germanium or silicon of sufficiently high resistivity to cause the current between contacts E and B to produce an electric field along the fillament thus increasing the minority carrier diffusion length. In a second embodiment, Fig. 3, not shown, a further contact (B2) is added, on the other side of contact E from the other contacts, to allow an electric field to be impressed in the P-type region to enhance the diffusion of carriers from contact E towards contacts B to ensure carrier collection along the whole length of contacts C1 and C2 with no external magnetic field present. Contacts C1 and C2 may be offset compared with contact E, or may have unequal impedances connected externally to balance the transducer at given values of magnetic field other than zero.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU36414/68A AU410154B2 (en) | 1968-04-16 | 1968-04-16 | Magnetotransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1234852A true GB1234852A (en) | 1971-06-09 |
Family
ID=3723662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1777769A Expired GB1234852A (en) | 1968-04-16 | 1969-04-08 | Improvements in or relating to semi-conductor transducers |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU410154B2 (en) |
| GB (1) | GB1234852A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2195886A1 (en) * | 1972-08-07 | 1974-03-08 | Ericsson Telefon Ab L M |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2000253A1 (en) * | 1970-01-05 | 1971-07-15 | Licentia Gmbh | Magnetic transistor |
-
1968
- 1968-04-16 AU AU36414/68A patent/AU410154B2/en not_active Expired
-
1969
- 1969-04-08 GB GB1777769A patent/GB1234852A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2195886A1 (en) * | 1972-08-07 | 1974-03-08 | Ericsson Telefon Ab L M |
Also Published As
| Publication number | Publication date |
|---|---|
| AU3641468A (en) | 1970-04-23 |
| AU410154B2 (en) | 1971-02-08 |
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