JPS5762571A - Solar battery - Google Patents

Solar battery

Info

Publication number
JPS5762571A
JPS5762571A JP55137674A JP13767480A JPS5762571A JP S5762571 A JPS5762571 A JP S5762571A JP 55137674 A JP55137674 A JP 55137674A JP 13767480 A JP13767480 A JP 13767480A JP S5762571 A JPS5762571 A JP S5762571A
Authority
JP
Japan
Prior art keywords
layer
boron
solar battery
covered
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55137674A
Other languages
Japanese (ja)
Inventor
Katsumi Murase
Nobuhiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55137674A priority Critical patent/JPS5762571A/en
Priority to GB8128646A priority patent/GB2086135B/en
Priority to DE3138544A priority patent/DE3138544C2/en
Priority to FR8118316A priority patent/FR2491260B1/en
Priority to NLAANVRAGE8104443,A priority patent/NL189271C/en
Priority to CA000386975A priority patent/CA1171977A/en
Publication of JPS5762571A publication Critical patent/JPS5762571A/en
Priority to US06/626,487 priority patent/US4521794A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

PURPOSE:To enhance the efficiency of a solar battery by adding at least boron and Ge or boron, hydrogen and Ge to an Si solar battery Pn or Pin structure of form a P type layer. CONSTITUTION:Boron is introduced by an ion injection method from the main surface 1 side of an N type single crystalline Si substrate 1. Then, the Ge ions are injected. An annealing for electrically activating the boron is carried out to form a P type layer 5. The peak density of boron injected layer is high density layer, is electrically activated by the effect of the addition of the Ge, thereby reducing the resistivity. An ohmic electrode 6 is covered on the layer 5, and an electrode 7 is covered on the layer 1 as a solar battery. In this manner, the P type layer having low resistivity and mechanical stability can be formed, thereby enhancing the effici- ency of the solar battery.
JP55137674A 1980-09-30 1980-10-03 Solar battery Pending JPS5762571A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP55137674A JPS5762571A (en) 1980-10-03 1980-10-03 Solar battery
GB8128646A GB2086135B (en) 1980-09-30 1981-09-22 Electrode and semiconductor device provided with the electrode
DE3138544A DE3138544C2 (en) 1980-09-30 1981-09-28 Semiconductor component
FR8118316A FR2491260B1 (en) 1980-09-30 1981-09-29 COMPOSITE LAYER ELECTRODE AND SEMICONDUCTOR DEVICE PROVIDED WITH SAME
NLAANVRAGE8104443,A NL189271C (en) 1980-09-30 1981-09-29 SEMICONDUCTOR DEVICE.
CA000386975A CA1171977A (en) 1980-09-30 1981-09-30 Electrode and semiconductor device provided with the electrode
US06/626,487 US4521794A (en) 1980-09-30 1984-07-03 Electrode and semiconductor device provided with the electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55137674A JPS5762571A (en) 1980-10-03 1980-10-03 Solar battery

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59065470A Division JPS6063968A (en) 1984-04-02 1984-04-02 Solar battery

Publications (1)

Publication Number Publication Date
JPS5762571A true JPS5762571A (en) 1982-04-15

Family

ID=15204162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55137674A Pending JPS5762571A (en) 1980-09-30 1980-10-03 Solar battery

Country Status (1)

Country Link
JP (1) JPS5762571A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198780A (en) * 1983-04-26 1984-11-10 Nippon Denso Co Ltd Amorphous silicon carbide series semiconductor
JP2019110185A (en) * 2017-12-18 2019-07-04 株式会社アルバック Manufacturing method of solar battery

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198780A (en) * 1983-04-26 1984-11-10 Nippon Denso Co Ltd Amorphous silicon carbide series semiconductor
JPH0614553B2 (en) * 1983-04-26 1994-02-23 日本電装株式会社 Amorphous silicon carbide based semiconductor and manufacturing method thereof
JP2019110185A (en) * 2017-12-18 2019-07-04 株式会社アルバック Manufacturing method of solar battery

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