JPS59198780A - Amorphous silicon carbide series semiconductor - Google Patents
Amorphous silicon carbide series semiconductorInfo
- Publication number
- JPS59198780A JPS59198780A JP58073610A JP7361083A JPS59198780A JP S59198780 A JPS59198780 A JP S59198780A JP 58073610 A JP58073610 A JP 58073610A JP 7361083 A JP7361083 A JP 7361083A JP S59198780 A JPS59198780 A JP S59198780A
- Authority
- JP
- Japan
- Prior art keywords
- doping
- silicon carbide
- amorphous silicon
- semiconductor
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 125000004429 atom Chemical group 0.000 abstract description 8
- 229910052799 carbon Inorganic materials 0.000 abstract description 8
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052745 lead Inorganic materials 0.000 abstract 2
- 229910052718 tin Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 ethylene, propylene Chemical group 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 229910000080 stannane Inorganic materials 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
- H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System including AIVBIV compounds or alloys, e.g. SiGe, SiC
Abstract
Description
【発明の詳細な説明】
本発明はアモルファス炭化シリコン（以下［ａ−３ｔ
Ｃｌと記す。）半導体に関する。ａ −３ｉＣ半導体は
、アモルファスシリコンに比べて光学的ギャップが大き
いために、ＰＩＮ型太陽電池の光入射端面側のＰ層に使
用され太陽電池の変換効率の向上に寄与している。とこ
ろが炭素どシリコンの共有結合力は、シリコン−シリコ
ンの共有結合力に比べて大きいために、炭素原子の存在
によって理想的なアモルファス構造であるコンティニュ
アスランダムネットワーク構造の形成が阻害される。こ
のため、ａ−３ｉ（、半導体のアモルファス構造の不規
則性がアモルファスシリコン半導体に比べて大きくなり
、帯端テイル準位を形成したリダングリングボンドが多
く生成され、ミツドギャップ単位を形成りる。一方、半
導体側わ１を電子ディバイスとして応用する場合には、
一般的に、易動度が大きく、バンドギャップが明確に区
画され、バンドギャップ内に意図しない局在準位あるい
は局在状態を有しないのが望ましい。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to amorphous silicon carbide (hereinafter [a-3t
It is written as Cl. ) related to semiconductors. Since the a-3iC semiconductor has a larger optical gap than amorphous silicon, it is used in the P layer on the light incident end face side of a PIN solar cell and contributes to improving the conversion efficiency of the solar cell. However, since the covalent bonding force between carbon and silicon is greater than that between silicon and silicon, the presence of carbon atoms inhibits the formation of a continuous random network structure, which is an ideal amorphous structure. For this reason, the irregularity of the a-3i (a-3i) semiconductor amorphous structure is greater than that of an amorphous silicon semiconductor, and many redundant bonds forming band-edge tail levels are generated, forming mid-gap units. On the other hand, when applying the semiconductor side 1 as an electronic device,
Generally, it is desirable that the mobility is high, the band gap is clearly defined, and there are no unintended localized levels or states within the band gap.
本発明の目的は、炭素原子をシリコンに混在させること
によって発生する局在状態密度を減少することを目的と
する。An object of the present invention is to reduce the density of localized states generated by mixing carbon atoms in silicon.
本発明者等は、かかる目的を達成するために研究を重ね
た結果、ａ−３ｉ（：、に、Ｓｎ、ＧＯ，Ｐｂのうち１
種以上の元素を微量ドーピングすれば局在状態密度を減
少さぜることができることを発見した。本発明は、かか
る発見の下になされた。As a result of repeated research to achieve this objective, the present inventors have discovered that one of Sn, GO, and Pb in a-3i(:,
We discovered that the density of localized states can be reduced by doping small amounts of more than one species. The present invention was made based on this discovery.
即ち、本発明はアモルファス構造の炭化シリコン半導体
に、
錫、ゲルマニウム、鉛のうち１種又は２種以上の原子を
ドーピングしたことを特徴とするアモルファス炭化シリ
コン系半導体からなる。That is, the present invention comprises an amorphous silicon carbide-based semiconductor characterized by doping an amorphous silicon carbide semiconductor with one or more atoms selected from tin, germanium, and lead.
炭素の共有結合半径は、０．７７人とシリコンの共有結
合半径１．１８人に比べて小さく、炭素シリコン間の共
有結合力は、シリコン−シリコン間の共有結合力に比べ
て大きい。よって、炭素原子の存在のため、原子構造に
、より大きな不規則性をもたらし、理想的なコンティニ
ュアスランダムネットワークｆ）ｓ ｒら遠ざかり、こ
のため局在状態密度がト昇りる。本発明者等は、シリコ
ンと同じ４族で、共有結合半径が、炭素原子と比へて大
きい池の元素、錫、ゲルマニウム、鉛の内１種又は２種
以上の原子を炭化シリコン半導イホにドーピングするこ
とにより、炭素とシリコンとの強力な結合によってもた
らされたアモルファスの不規則性を緩和し得ることを発
見した。ここで１−一ビング原子のドーピング量は、局
在状態密度を減少さＵるのに最適な量を必要とする。例
えばａ −３ｉ Ｃのタンクリングボンドによる局在ｉ
１（位密度が１０１ｑ Ｉ９゜
〜１０ ５ｐｌｎＳ ／ｅＶ−ＣＧであることから、ビ
ー１午 １’１
ピング原子は、１０〜１０ ／Ｃｍ２であるのが良い
。原子数比で多（とも０．１％以下であり、望ましくは
、０．０１〜０．００１％である。又、前記の炭化シリ
コン半導体は、水素原子又はフッ素等のハロゲン元素に
Ｊ：って、タンクリングボンドがターミネートされてい
ることが望ましい。本発明のアモルファス炭化シリコン
系半導体の製造方法は、よく知られたグロー放電ＣＶＤ
法によって製作づることかできる。即ち、ａ−ＳＩＣは
シラン等のシリコンハイドライド＜ ｓ ｒ７Ｌ＋−＋
２７ケ、）とメタンエタン等のハイドロカーボンをプラ
ズマ分解して作成する。又、Ｓｎをドーピングづる場合
には、テトラメチルティン（Ｓｎ （ＣＨ３） ａ
）又は、スタナン＜ｓｎ Ｈ４）ガスを微量混合してプ
ラズマ分解、またはグロー放電分解する。上記ハイドロ
カーボンについては飽和脂肪族ハイドロカーボン（へＨ
２□２）、不飽和脂肪族ハイドロカーボン（エチレン、
プロピレン）、アヒチレンを使用できる。ドーピングす
る錫原子に関しては５ｎ（ＣＩ−１３）４の他にＳｎ
（Ｃ２Ｈ５）４．５ｎｉｎｓ ／ｅｖ−ｃｃの局在状
態密度を有し、真性アモルファスシリコンの局在状態密
度１０１”〜１０ｓｐｉｎｓ ／ｅｖ・ＣＣに比べて大
きなものであった。しかし、本発明のように錫、ゲルマ
ニウム、鉛等の他の４族元素の１種又は２種以上を適量
ドーピング＋４ 。The covalent bond radius of carbon is 0.77 mm, which is smaller than the covalent radius of silicon, 1.18 mm, and the covalent bond force between carbon and silicon is larger than the covalent bond force between silicon and silicon. Therefore, the presence of carbon atoms brings about greater irregularity in the atomic structure, moving away from the ideal continuous random network f)sr, thereby increasing the local state density. The present inventors have incorporated one or more atoms of tin, germanium, and lead, which belong to the same group 4 as silicon and have a larger covalent bond radius than carbon atoms, into silicon carbide semiconductors. They discovered that by doping with carbon, it is possible to alleviate the amorphous disorder caused by the strong bond between carbon and silicon. Here, the doping amount of 1-1 Bing atoms needs to be an optimum amount to reduce the local state density. For example, localization i due to tank ring bond of a −3i C
1 (Since the atomic density is 101q I9° ~ 10 5 plnS /eV-CG, it is preferable that the number of B 1 '1 ping atoms is 10 ~ 10 /Cm2. 1% or less, preferably 0.01 to 0.001%.Also, the silicon carbide semiconductor has a hydrogen atom or a halogen element such as fluorine terminated with a tank ring bond. The method for manufacturing an amorphous silicon carbide semiconductor of the present invention is preferably performed using the well-known glow discharge CVD method.
It can be manufactured according to the law. That is, a-SIC is a silicon hydride such as silane < s r7L+-+
It is created by plasma decomposition of hydrocarbons such as methane and ethane. In addition, when doping Sn, tetramethyltin (Sn (CH3) a
) or stannane<sn H4) A trace amount of gas is mixed and plasma decomposition or glow discharge decomposition is performed. Regarding the above hydrocarbons, saturated aliphatic hydrocarbons (H
2□2), unsaturated aliphatic hydrocarbons (ethylene,
propylene) and ahitylene can be used. Regarding the doping tin atoms, in addition to 5n (CI-13)4, Sn
(C2H5) has a localized state density of 4.5 nins/ev-cc, which is larger than that of intrinsic amorphous silicon, which has a localized state density of 101'' to 10 spins/ev-cc. Doping with an appropriate amount of one or more of other group 4 elements such as tin, germanium, and lead +4.
すれば局在状態密度を１０ ５ｐａｎｓ ／ｅｖｃｃに
減少させることができた。このため、本発明のアモルフ
ァス炭化シリコン系半導体素子を用いて製作した太陽電
池は高効率のものが得られた。即ち、開放電圧をＶｏｃ
、短絡電流を■ＳＣとづれぽ、３ｍＷの蛍光燈下におい
て、Ｖｏｃ＝ ７００１ｎ Ｖ、１ｓｃ＝６０μＡ／ｃ
ｍ２、ＡＭ１太陽光下におイＴ Ｇ、Ｊｌ、Ｖｏｃ＝９
００ｍ Ｖ、 Ｉ ｓｃ＝ １６ｍ△／Ｃ１１１２テあ
り、変換効率８．０８％であった。又、アモルファス薄
膜ＦＥＴに使用することもでき、これを用い／ｊＦ Ｅ
’１−を試作したところオン、オフ比が１０′７以上
のものが得られた。By doing so, the localized state density could be reduced to 10 5 pans/evcc. Therefore, a highly efficient solar cell was obtained using the amorphous silicon carbide semiconductor element of the present invention. That is, the open circuit voltage is Voc
, the short circuit current is set to ■SC, under a 3mW fluorescent light, Voc = 7001n V, 1sc = 60μA/c
m2, AM1 Under sunlight T G, Jl, Voc=9
00 mV, Isc=16mΔ/C1112te, and the conversion efficiency was 8.08%. It can also be used for an amorphous thin film FET, using this /jF E
When '1- was produced as a prototype, an on/off ratio of 10'7 or more was obtained.
実施例
本実施例は錫元素をドーピングしたａ−８ＩＣ半導体実
施例である。Embodiment This embodiment is an example of an a-8 IC semiconductor doped with tin element.
本実施例では基板ガラス上にアモルファス炭化シリコン
系半導体から成る薄膜を形成したものである。用いた材
料は、シランカス（Ｓｉｔ−Ｉ４）、メタンガス（ＣＨ
４）、テトラメチルティン（Ｓｎ （Ｃｆ−Ｉ３）
４ ）ガスを用いた。混合カスの比率はＳｉ Ｈａ ：
ＣＨａ＝６５：３５とし、ドーピング原子として錫（Ｓ
ｎ ）を選び、テトラメチルディン（Ｓｎ （ＣＨ３
）ａをモル比で１０−２〜１Ｏ−３までの範囲で各種ド
ーピングした試料を作成した。又、この混合ガスはアル
ゴン又は水素ガスで１０倍に稀釈され、その他の条件は
、流ａ３０〜５ Ｑ ＳＣＣｍ、内圧０．３〜０．５Ｔ
ｏｒｒ 、基板温度２００〜３００℃、ＲＦ電力１０〜
２０ワット（電力密度０．０１４〜０．０２８Ｗ／ｃｍ
２）である。この様な条件のプラズマＣＶＤ法によって
薄膜状のアモルファス炭化シリコン系半導体を作成した
。In this example, a thin film made of an amorphous silicon carbide semiconductor is formed on a glass substrate. The materials used were silancus (Sit-I4), methane gas (CH
4), Tetramethyltin (Sn (Cf-I3)
4) Gas was used. The ratio of the mixed residue is Si Ha:
CHa=65:35, and tin (S
n ) and tetramethyldine (Sn (CH3
) Samples were prepared in which various types of a were doped at molar ratios ranging from 10-2 to 1O-3. Also, this mixed gas was diluted 10 times with argon or hydrogen gas, and the other conditions were a flow rate of 30 to 5 Q SCCm, and an internal pressure of 0.3 to 0.5 T.
orr, substrate temperature 200~300℃, RF power 10~
20 Watts (power density 0.014-0.028W/cm
2). A thin film-like amorphous silicon carbide semiconductor was produced by plasma CVD under these conditions.
その試料について局在状態密度を測定した結果を第１図
に示す。このグラフから明らかなように真正アモルファ
ス炭化シリコン系半導体は、１０１９桁の局在状態密度
を有しているが、錫をドーピングするに従って局在状態
密度は減少し、最小値１６゜
１Ｑ ５ｐｌｎＳ ／ｅｖ−ｃｃを記録した後、局在
状態密度は上昇する。このことから錫がドーピングされ
ることにより、共有結合力の大きな炭素原子の効果に基
づく結晶構造の不規則性が錫元素の僅かな混入により緩
和されたものと思われる。このグラフから錫の添加割合
は１０−６〜１０−５が最も望ましいことが分った。こ
の１「１の１〜−ピンク用に１６ ・
対して局在状態密度は１０ ５ｐ１ｎｓ ／ｅｖ−ｃｃ
ど、ドーピングしないものに比べて約１１（Ｊ以」−減
少りることができた。Figure 1 shows the results of measuring the local density of states for the sample. As is clear from this graph, the true amorphous silicon carbide-based semiconductor has a localized state density of 1019 orders of magnitude, but as tin is doped, the localized state density decreases, and the minimum value is 16°1Q 5plnS /ev After recording −cc, the localized state density increases. From this, it seems that by doping with tin, the irregularity of the crystal structure due to the effect of carbon atoms having a large covalent bond force is alleviated by the small amount of tin mixed in. From this graph, it was found that the most desirable tin addition ratio was 10-6 to 10-5. For this 1 "1 of 1 ~ - 16 for pink, the localized state density is 10 5p1ns /ev-cc
It was possible to reduce the amount by about 11 (J or more) compared to that without doping.
第２実施例
第２実施例はアモルファス炭化シリ−」ン系半導体を用
いて薄膜形状に構成した太陽電池に関づるものである。Second Embodiment The second embodiment relates to a solar cell constructed in the form of a thin film using an amorphous silicon carbide semiconductor.
そのアモルファス太陽電池の４Ｍ成断面図を第２図に示
す。厚さ２００〜５００μｍのステンレスＳＵＳ基板２
の上にアモルフシ・ス人陽電ｉ′Ｉ！！層をＮ型、Ｉ型
、Ｐ型と堆積形成した。その上には透明導電膜（１王０
）１０が１０００人員空蒸着によって形成されている。A 4M cross-sectional view of the amorphous solar cell is shown in FIG. Stainless steel SUS substrate 2 with a thickness of 200 to 500 μm
On top of Amorphusi Sujin Yoden i'I! ! Layers were deposited as N type, I type, and P type. On top of that is a transparent conductive film (1 king 0
) 10 is formed by 1000 person empty deposition.
アモルファス半導体層のＪ「積はプラズマＣＶＤ法によ
った。１３゜５６ Ｍ ｆ−（ｚの高周波放電によりＱ
、１〜１ＬＯ１’ｒの内圧のもとで行なわれた。Ｎ型
半導体層４にはアモルファスシリコンに燐をドーピング
してＮ型に形成したものである。即ち、成分比は５ｉｔ
−１４：ＢＨ３＝１００：０．５〜３で、前実施例と同
様な条件で厚さ３００〜５００人に作成した。The J product of the amorphous semiconductor layer was determined by the plasma CVD method.
, under an internal pressure of 1 to 1LO1'r. The N-type semiconductor layer 4 is formed by doping amorphous silicon with phosphorus to form an N-type semiconductor layer. That is, the component ratio is 5it
-14:BH3=100:0.5-3, and a thickness of 300-500 was prepared under the same conditions as in the previous example.
次に、１型半導体層６はシランＳｉｚトＩｓを同じにう
にプラズマＣＶＤ法によって５０００〜７０００人堆積
させて形成した。さらに、Ｐ型半導体層８を本発明のア
モルファスシリコンティンカーバイド（ａ −８ｔ Ｓ
ｎ Ｃ： Ｈ）で２０００〜４０００人の厚さに構成し
た。この層の形成にはＳｉ ｔｌ ４ ：
ＣＨ４： ３ｎ （ＣＨ３） ４ 〜０．
３ 〜０゜９７：０．８〜０．０３＋１０−’ 〜１
ｄｌ （７）範囲で各種ｊｆＩ積したものを製作した。Next, the type 1 semiconductor layer 6 was formed by depositing 5,000 to 7,000 silanes by the same plasma CVD method. Furthermore, the P-type semiconductor layer 8 is made of amorphous silicon tinkerbide (a-8t S
n C: H) to a thickness of 2,000 to 4,000 people. For the formation of this layer, Si tl 4 :
CH4: 3n (CH3) 4 ~0.
3 ~0°97:0.8~0.03+10-' ~1
Various jfI products were manufactured in the dl (7) range.
そして、Ｐ型にづるために８２Ｈｓのガスを全体の量に
対して０．０２〜１％混入してドーピングした。Then, in order to make it P type, 0.02 to 1% of 82Hs gas was mixed in with respect to the total amount for doping.
これらの条件で作成した結果、５ｉｔ−１４：０Ｍ４〜
０．６５：０．３５でジボランのドープ徂０゜１％、５
ｎ（ＣＨ３）ａのドープａｌｏ−６とした時太陽電池の
素子性能を測定した結果、３ｍＷ螢光燈を照射した場合
の開放起電力は７００ｍ Ｖ。As a result of creating under these conditions, 5it-14:0M4~
0.65: 0.35 doping of diborane 0.1%, 5
As a result of measuring the element performance of the solar cell when using n(CH3)a doped alo-6, the open electromotive force when irradiated with a 3 mW fluorescent light was 700 mV.
短絡電流Ｇ；＆６０ｍＡ／ｃｎｕであった、又、ＦＦ＝
６０％、ＡＭｌの太陽光の照射にａ′３いては解放電圧
が０．９Ｖ、短絡電流は１６ ｍ Ａ ／’ｃｍ２テあ
り、変換効率にＪ′３いて８．０８％という高効率のも
のが得られた。Short circuit current G; was &60mA/cnu, and FF=
60%, AMl sunlight irradiation with a'3 has an open voltage of 0.9V, a short circuit current of 16 mA/'cm2, and a conversion efficiency of J'3 with a high efficiency of 8.08%. was gotten.
第１図は錫のドーピング量に対するａ−３ｉ Ｃ：Ｈの
局在状態密度の測定結果をグラフに表したものである。
第２図は本発明の実施例に係る太陽電池の構成を示した
構成図である。
２・・・ステンレス基板 ４・・・Ｎ型半導体層６・
・・Ｉ型半導体層 ８・・・Ｐ型半導体層１０・・
・透明導電膜層
特許出願人 日本電装株式会礼
代理人 弁理士 大川穴
同 弁理士 藤谷修
同 弁理士 丸山明夫FIG. 1 is a graph showing the measurement results of the local state density of a-3i C:H with respect to the tin doping amount. FIG. 2 is a block diagram showing the structure of a solar cell according to an embodiment of the present invention. 2... Stainless steel substrate 4... N-type semiconductor layer 6.
...I type semiconductor layer 8...P type semiconductor layer 10...
・Transparent conductive film layer patent applicant Nippondenso Co., Ltd. Rei agent Patent attorney Ana Do Okawa Patent attorney Shudo Fujitani Patent attorney Akio Maruyama
Claims (1)
ドーピングしたことを特徴とするアモルファス炭化シリ
コン系半導体。 （２）前記ドーピング原子の量は、原子数比で、多くと
も、０．１％であることを特徴とする特許請求の範囲第
１項記載のアモルファス炭化シリコン系半導体。 （３）前記炭化シリコン半導体は、水素又は、ハロゲン
元素のうち、少なくとも１種以上の元素により、ダング
リングボンドがターミネートされていることを特徴とす
る特許請求の範囲第１項又は第２項記載のアモルファス
炭化シリコン系半導体。[Scope of Claims] <1)' An amorphous silicon carbide-based semiconductor characterized in that an amorphous silicon carbide semiconductor is doped with one or more atoms of tin, germanium, and lead. (2) The amorphous silicon carbide semiconductor according to claim 1, wherein the amount of the doping atoms is at most 0.1% in terms of atomic ratio. (3) The silicon carbide semiconductor has a dangling bond terminated with at least one element selected from hydrogen and a halogen element. Amorphous silicon carbide semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073610A JPH0614553B2 (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon carbide based semiconductor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073610A JPH0614553B2 (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon carbide based semiconductor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59198780A true JPS59198780A (en) | 1984-11-10 |
| JPH0614553B2 JPH0614553B2 (en) | 1994-02-23 |
Family
ID=13523271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58073610A Expired - Lifetime JPH0614553B2 (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon carbide based semiconductor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0614553B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5762571A (en) * | 1980-10-03 | 1982-04-15 | Nippon Telegr & Teleph Corp <Ntt> | Solar battery |
| JPS5779672A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Photoresponsive amorphous alloy and method of producing same |
-
1983
- 1983-04-26 JP JP58073610A patent/JPH0614553B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5779672A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Photoresponsive amorphous alloy and method of producing same |
| JPS5762571A (en) * | 1980-10-03 | 1982-04-15 | Nippon Telegr & Teleph Corp <Ntt> | Solar battery |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0614553B2 (en) | 1994-02-23 |
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