JPS62159475A - Amorphous silicon solar cell - Google Patents
Amorphous silicon solar cellInfo
- Publication number
- JPS62159475A JPS62159475A JP61000559A JP55986A JPS62159475A JP S62159475 A JPS62159475 A JP S62159475A JP 61000559 A JP61000559 A JP 61000559A JP 55986 A JP55986 A JP 55986A JP S62159475 A JPS62159475 A JP S62159475A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- type
- solar cell
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910020328 SiSn Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はアモルファスシリコン太陽電池に係り、ｐ／ｉ
界面特性が秀れ光電変換効率の高いアモルファスシリコ
ン太陽電池に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to an amorphous silicon solar cell.
This article relates to amorphous silicon solar cells with excellent interfacial properties and high photoelectric conversion efficiency.
ｐ型層−ＳｉＣ：Ｈとｉ型層−Ｓｉ：Ｈのへテロ接合を
有する太陽電池ではｐ／ｉ界面にバッファ層を設けるこ
とにより光電変換効率を高くできることが報告されてい
る第１７回太陽エネルギー推進委員会第１１回アモルフ
ァス連絡会（昭和５９年成果報告）予稿第１９４頁参照
。該バッファ層は、ｐ／ｉ界面のｐ層側あるいはｉ層側
にカーボンドーピング量を変化させて形成され、 ｐ
Ｊｔ！側からｉ層側へ減少する光学ギャップを有する。It has been reported that in solar cells having a heterojunction of a p-type layer - SiC:H and an i-type layer - Si:H, the photoelectric conversion efficiency can be increased by providing a buffer layer at the p/i interface. See page 194 of the 11th Amorphous Liaison Meeting of the Energy Promotion Committee (Report of Results in 1984). The buffer layer is formed by varying the amount of carbon doping on the p layer side or the i layer side of the p/i interface, and p
Jt! It has an optical gap that decreases from the side to the i-layer side.
該バッファ層の効果としては、ｐ ／ ｉ界面でのキャ
リアの再結合の減少し、該バッファ層がｐ層とｉ層のバ
ンド幅を連続的につなぐためｐ ／ ｉ界面の障壁が緩
和されることの２点が考えられている。The effect of the buffer layer is to reduce carrier recombination at the p/i interface, and because the buffer layer continuously connects the bandwidths of the p and i layers, the barrier at the p/i interface is relaxed. Two points are considered.
従来、該バッファ層は数十人から画数十人と薄い上に、
シランガス流量を一定としメタンやアセチレン等のカー
ボン系ガスの流量を次第に減少させることにより形成さ
れたため、流量制御が面倒であり該膜形成の再現性はあ
まりよくなかった。Conventionally, the buffer layer is thin, ranging from several tens of layers to several tens of strokes, and
Since the film was formed by keeping the flow rate of silane gas constant and gradually decreasing the flow rate of carbon-based gas such as methane or acetylene, controlling the flow rate was troublesome and the reproducibility of the film formation was not very good.
本発明の目的は、ｐ／ｉ界面特性を改善し、曲線因子が
大きく、光電変換効率の高いアモルファスシリコン太陽
電池を提供することにある。An object of the present invention is to provide an amorphous silicon solar cell with improved p/i interface characteristics, a large fill factor, and high photoelectric conversion efficiency.
結晶成長技術やアモルファス薄膜成長技術の進歩によっ
て材料中の電子波長と同程度の膜厚１０〜３８０人を持
ついわゆる超薄膜が形成可能となり、薄膜材料に２次元
性が現われ、この特徴を利用することが活発に研究開発
されている。この特治を生かし人工的に超薄膜を多層化
していわゆる超格子を形成し、その特徴を利用する種々
の応用が考えらでいる。Advances in crystal growth technology and amorphous thin film growth technology have made it possible to form so-called ultra-thin films with a thickness of 10 to 380 nanometers, which is about the same as the electron wavelength in the material, and two-dimensionality appears in thin film materials, and this feature can be utilized. This is currently being actively researched and developed. Taking advantage of this special property, a variety of applications are being considered by artificially layering ultra-thin films to form a so-called superlattice, and making use of its characteristics.
本発明は、アモルファスＳｉ太陽電池のｐ ／ ｉ界面
のバッファ層にａ−ＳｉＣ：Ｈ膜とａ −Ｓ ｉ：Ｈ膜
の多層超′５！を膜を用いｐ／ｉ界面特性を改善するも
のであり、例えば、膜形成時カーボン系ガスのバルブの
開閉を行う二とにより、形成される。The present invention provides a buffer layer at the p/i interface of an amorphous Si solar cell using a multilayer super-layer consisting of an a-SiC:H film and an a-Si:H film. This method uses a film to improve the p/i interface characteristics, and is formed, for example, by opening and closing a carbon-based gas valve during film formation.
該バッファ層中、２層側からｉ層側への光学ギャップの
漸減が、各薄層を数人ないし数十人の厚さとし、かつ同
方向へａ−ＳｉＣ：Ｈ膜厚を次第に減少させるとともに
ａ−５ｉ：Ｈ膜厚を次第に増大させることにより実現さ
れた。該バッファ層はｐ層とｉ層のバンド幅を連続的に
つなぐためｐ／ｉ界面の障壁を緩和し、かつ多層超薄膜
構造の採用により界面再結合速度の減少をもたらした。In the buffer layer, the optical gap gradually decreases from the second layer side to the i layer side, making each thin layer several to several tens of times thicker, and as the a-SiC:H film thickness gradually decreases in the same direction. This was achieved by gradually increasing the a-5i:H film thickness. The buffer layer continuously connects the band widths of the p-layer and i-layer, thereby relaxing the barrier at the p/i interface, and reducing the interfacial recombination rate by employing a multilayer ultra-thin film structure.
本発明は、上記ａ−ＳｉＣ：Ｈ／ａ Ｓｉ ：Ｈヘテ
ロ接合界面以外でも、ａ−３ｉ：Ｈ，ａ−ＳｉＮ：Ｈ，
ａ−ＳｉＧｅ ：Ｈ，ａ−ＳｉＳｎ ：Ｈ，ａ−ＳｉＣ
：ＦＺ等のアモルファスＳｉ系材料の組み合せから成る
ペテロ接合界面のバッファ層に適用可能でありいずれも
界面特性の改善が見いだされた。The present invention provides a-3i:H, a-SiN:H,
a-SiGe:H, a-SiSn:H, a-SiC
: It can be applied to a buffer layer at the Peter junction interface made of a combination of amorphous Si-based materials such as FZ, and it was found that the interface properties were improved in both cases.
以下、本発明の一実施例を第１図および第２図により説
明する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
まずガラス基板１１上にＩＴＯ／５ｎＯｘ２層膜から成
る導電性透過膜１２を形成した。この上に、モノシラン
ガス、メタンガス、Ｈ２ベースＢｚＨｅガスの混合ガス
の高周波プラズマ分解法によりｐ型ＳｊＣ：Ｈ膜１３を
形成し、さらにバッファ層１４を形成した。該バッファ
層は、第２図に示すように多層薄膜構造を有する。モノ
シランガスを常時流し、メタンガスを断続的に流すこと
によりａ −Ｓ ｉ Ｃ： ）Ｉ層２１，２３，２５，
２７゜２９とａ−３ｉ：Ｈ層２２，２４，２６，２８゜
３０を交互に形成した。ａ −Ｓ ｉ Ｃ： Ｉ−１膜
厚は２５．２０，１５，１０，５人と減少させ、ａ−３
ｉ：Ｈ１ｌ莫厚は５，１０，１５，２０，２５人と増大
させた。さらにこの上にｉ型ａ−３ｉ：Ｈ膜１５、ｎ型
機結晶Ｓｉ膜１６を順次形成し、最後にＡｇ電極１７を
蒸着した。First, a conductive transparent film 12 made of a two-layer film of ITO/5nOx was formed on a glass substrate 11. A p-type SjC:H film 13 was formed thereon by high-frequency plasma decomposition of a mixed gas of monosilane gas, methane gas, and H2-based BzHe gas, and a buffer layer 14 was further formed. The buffer layer has a multilayer thin film structure as shown in FIG. By constantly flowing monosilane gas and intermittently flowing methane gas, a-S i C: )I layers 21, 23, 25,
27°29 and a-3i:H layers 22, 24, 26, and 28°30 were formed alternately. a-S i C: I-1 film thickness was reduced to 25.20, 15, 10, 5, a-3
i: H1l Moko increased to 5, 10, 15, 20, 25 people. Furthermore, an i-type a-3i:H film 15 and an n-type mechanical crystalline Si film 16 were successively formed thereon, and finally an Ag electrode 17 was deposited.
本試料の曲線因子は０．７３ と高い値を示し、光電変
換効率は１１．１ ％であった。The fill factor of this sample was as high as 0.73, and the photoelectric conversion efficiency was 11.1%.
本発明によれば、多層超薄ｆｆ［！造の特長を生かし、
ガス流量の細かな制御によらずどもガスを流す（バルブ
開閉の）時間の制御のみで光学ギャップの変化した層の
形成ができ、かつ、超構造ゆえに該層における再結合速
度が減少するため、ｐ／ｉ、ｎ／ｉ界面特性の秀れた、
したがって光な変換特性の秀れたアモルファスシリコン
太陽電池を簡便に作製できるとの効果がある。According to the present invention, a multilayer ultra-thin ff[! Taking advantage of the features of construction,
It is possible to form a layer with a changed optical gap by simply controlling the gas flow time (opening and closing of the valve) without finely controlling the gas flow rate, and because the superstructure reduces the recombination rate in the layer, Excellent p/i and n/i interface characteristics,
Therefore, there is an effect that an amorphous silicon solar cell with excellent light conversion characteristics can be easily produced.
第１図はアモルファスシリコン太陽電池の縦断面図、第
２図は第１図１４バツフア層の拡大図である。
１１・・・ガラス基板、１２・・・透明導電膜、１３・
・・ｐ型ａ−ＳｉＣ：Ｈ［，１４−・・バッファ層、１
５−・・ｉ型ａ−Ｓｉ：Ｈ膜、１６−ｎ型微結晶Ｓｉ膜
。FIG. 1 is a longitudinal cross-sectional view of an amorphous silicon solar cell, and FIG. 2 is an enlarged view of the buffer layer shown in FIG. 1. 11...Glass substrate, 12...Transparent conductive film, 13.
...p-type a-SiC:H[,14-...buffer layer, 1
5--i-type a-Si:H film, 16-n-type microcrystalline Si film.
Claims (1)
Ｓｉ太陽電池において、ｐ型層とｉ型層の間およびｎ型
層とｉ型層の間の少なくとも一方に、両側の層の主成分
から成る２種類の層の繰り返しから成る多層薄膜を有す
ることを特徴とするアモルファスＳｉ太陽電池。 ２、特許請求範囲１におけるアモルファス太陽電池にお
いて、上記ｐ型層はｐ型ａ−ＳｉＣ：Ｈ、上記ｉ型層は
ｉ型ａ−Ｓｉ：Ｈであり、上記多層薄膜はａ−ＳｉＣ：
Ｈとａ−Ｓｉ：Ｈの繰り返しから成ることを特徴とする
アモルファスＳｉ太陽電池。 ３、特許請求範囲２におけるアモルファス太陽電池の、
上記多層薄膜は、ａ−ＳｉＣ：Ｈ膜とａ−Ｓｉ：Ｈ膜が
交互に重ねられ、ｐ型層からｉ型層の方向へａ−ＳｉＣ
：Ｈ膜厚は次第に薄く、ａ−Ｓｉ：Ｈ膜厚は次第に厚く
なつていることを特徴とするアモルファスＳｉ太陽電池
。[Claims] 1. In an amorphous Si solar cell having at least one pin structure, at least one of the layers between the p-type layer and the i-type layer and between the n-type layer and the i-type layer has a main layer on both sides. An amorphous Si solar cell characterized in that it has a multilayer thin film consisting of repeating two types of layers consisting of components. 2. In the amorphous solar cell according to claim 1, the p-type layer is p-type a-SiC:H, the i-type layer is i-type a-SiC:H, and the multilayer thin film is a-SiC:H.
An amorphous Si solar cell characterized by consisting of repeating H and a-Si:H. 3. The amorphous solar cell in claim 2,
The above multilayer thin film has a-SiC:H films and a-Si:H films stacked alternately, and a-SiC
An amorphous Si solar cell characterized in that the :H film thickness becomes gradually thinner and the a-Si:H film thickness gradually becomes thicker.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61000559A JPS62159475A (en) | 1986-01-08 | 1986-01-08 | Amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61000559A JPS62159475A (en) | 1986-01-08 | 1986-01-08 | Amorphous silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62159475A true JPS62159475A (en) | 1987-07-15 |
Family
ID=11477078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61000559A Pending JPS62159475A (en) | 1986-01-08 | 1986-01-08 | Amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62159475A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62181476A (en) * | 1986-02-05 | 1987-08-08 | Toshiba Corp | Semiconductor device |
| JPH01145875A (en) * | 1987-12-02 | 1989-06-07 | Hitachi Ltd | Amorphous si solar battery |
| JPH0225078A (en) * | 1988-07-13 | 1990-01-26 | Sanyo Electric Co Ltd | Photovoltaic device and manufacture thereof |
| JP2004335734A (en) * | 2003-05-07 | 2004-11-25 | National Institute Of Advanced Industrial & Technology | Thin film solar cell |
| JP2004335733A (en) * | 2003-05-07 | 2004-11-25 | National Institute Of Advanced Industrial & Technology | Thin film solar cell |
| JP2010135415A (en) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | Method of manufacturing thin-film solar cell |
-
1986
- 1986-01-08 JP JP61000559A patent/JPS62159475A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62181476A (en) * | 1986-02-05 | 1987-08-08 | Toshiba Corp | Semiconductor device |
| JPH01145875A (en) * | 1987-12-02 | 1989-06-07 | Hitachi Ltd | Amorphous si solar battery |
| JPH0571195B2 (en) * | 1987-12-02 | 1993-10-06 | Hitachi Ltd | |
| JPH0225078A (en) * | 1988-07-13 | 1990-01-26 | Sanyo Electric Co Ltd | Photovoltaic device and manufacture thereof |
| JP2004335734A (en) * | 2003-05-07 | 2004-11-25 | National Institute Of Advanced Industrial & Technology | Thin film solar cell |
| JP2004335733A (en) * | 2003-05-07 | 2004-11-25 | National Institute Of Advanced Industrial & Technology | Thin film solar cell |
| JP2010135415A (en) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | Method of manufacturing thin-film solar cell |
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