JPH01145875A - Amorphous si solar battery - Google Patents
Amorphous si solar batteryInfo
- Publication number
- JPH01145875A JPH01145875A JP62303116A JP30311687A JPH01145875A JP H01145875 A JPH01145875 A JP H01145875A JP 62303116 A JP62303116 A JP 62303116A JP 30311687 A JP30311687 A JP 30311687A JP H01145875 A JPH01145875 A JP H01145875A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- film
- sic
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 30
- 229910017875 a-SiN Inorganic materials 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052796 boron Inorganic materials 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002900 effect on cell Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はアモルファスＳｉ太陽電池に係り、特に変換効
率の向上したアモルファスＳｉ太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an amorphous Si solar cell, and particularly to an amorphous Si solar cell with improved conversion efficiency.
ｐｉｎ型のアモルファスＳｔ（以下ａ−Ｓｉ：Ｈと記す
）太陽電池において１例えば受光層がｐ型層（ｐ型層−
Ｓｉ：Ｈ）のみでは短波長光の吸収が大きくなるため、
Ｐ型炭化層（Ｐ型層−ＳｉＣ：Ｈ）が用いられ、ｐ型層
−Ｓ ｉ Ｃ： Ｈ／ｐ型ａ−５ｔ：Ｈ構造のものや
、また更には、より光導電性を増すために、上記構造で
各層を薄くして積み重ねた超格子膜を用いるもの等が知
られている。In a pin-type amorphous St (hereinafter referred to as a-Si:H) solar cell, for example, the light-receiving layer is a p-type layer (p-type layer-
Since absorption of short wavelength light increases with Si:H) alone,
A P-type carbonized layer (P-type layer-SiC:H) is used, a p-type layer -SiC:H/p-type a-5t:H structure, or even a p-type layer -SiC:H to increase photoconductivity. Additionally, a method using a superlattice film in which each layer is thinned and stacked in the above structure is known.
例えば、特開昭６１−９５５７５号参照。For example, see Japanese Patent Application Laid-Open No. 61-95575.
現在量も一般的なａ −Ｓ ｉ ： ｔｌ太陽電池の基
板は、透明導電膜付きガラスであるが、透明導電膜中の
不純物がセル特性に悪影響を及ぼしている。The substrate of the currently common a-Si:tl solar cell is glass with a transparent conductive film, but impurities in the transparent conductive film have an adverse effect on cell characteristics.
第２図はｐｉｎ型太陽電池において、Ｐ層を同じ膜厚で
ｐ型層 −Ｓ ｉ Ｃ： Ｈ層とした場合９とｐ型層−
Ｓｉ ： Ｉ−ｔＢとした場合１０について、セル製造
後に熱処理を行なった時の開放電圧（ＶＯＣ）の変化を
見たものである。高温でのＶ。Ｃの低下は、主に透明導
電膜中の不純物がｐｉ界面に拡散したためであり、不純
物拡散に関してはｐ型層−Ｓｉ ： Ｈ膜よりもｐ型層
−Ｓ ｉ Ｃ： ｔｌ膜が勝っていることがわかる。Figure 2 shows a pin-type solar cell in which the P layer has the same thickness as the p-type layer -SiC:H layer 9 and the p-type layer-
In the case of Si: I-tB, the change in open circuit voltage (VOC) for No. 10 was observed when heat treatment was performed after cell manufacture. V at high temperature. The decrease in C is mainly due to the diffusion of impurities in the transparent conductive film to the pi interface, and the p-type layer -SiC: tl film is superior to the p-type layer -Si:H film in terms of impurity diffusion. I understand that.
しかし、ｐ型層 −Ｓ ｉ Ｃ： Ｈ膜は光導電度が低
いため、通常は更にｐ型層 −Ｓ ｉ ： Ｈ膜が形成
される。However, since the p-type layer -S i C:H film has low photoconductivity, a p-type layer -S i :H film is usually further formed.
第３図は太陽電池製造後に膜中のボロンの分布をＳＩＭ
Ｓにより分析したものだが、ノンドープ層にかなりの深
さまでボロンが分布しており、この種の太陽電池は短絡
電流（Ｊ ｓ ｃ）が低い。これはｉ！５形成時にｐ層
からボロンがオートドーピングするためである。Figure 3 shows the SIM distribution of boron in the film after solar cell manufacturing.
As analyzed by S, boron is distributed to a considerable depth in the non-doped layer, and this type of solar cell has a low short circuit current (J sc ). This is i! This is because boron is auto-doped from the p layer when forming the p-layer.
Ｐ層の光導電度を上げる方法の−っとして、ａ−ＳｉＣ
：Ｈ膜（Ｐ型層−ＳｉＣ：Ｈ膜）とＰ型層−８ｔ：Ｈ膜
の繰り返しから成る超格子膜も用いられているが、層が
多い分だけ工程数が多く煩雑となる他、各層が非常に薄
いために拡散やオートドーピング防止の効果が弱まって
いるという間開があった。As a way to increase the photoconductivity of the P layer, a-SiC
A superlattice film consisting of a repetition of :H film (P-type layer-SiC:H film) and P-type layer-8t:H film is also used, but since there are many layers, the number of steps is large and complicated. There was a gap in which each layer was so thin that its effectiveness in preventing diffusion and autodoping was weakened.
上記目的は、低抵抗のｐあるいはｎ型アモルファスシリ
コンを挾んで、基板側に第１のＳｉＣ：Ｈ層と接合側に
第２のＳｉＣ：Ｈ層を形成することにより達成される。The above object is achieved by sandwiching low resistance p- or n-type amorphous silicon and forming a first SiC:H layer on the substrate side and a second SiC:H layer on the junction side.
ａ−ＳｉＣ：Ｈ層は不純物拡散を抑える他、ａ−Ｓｉ：
Ｈｆｉに較べて化学的に安定であり、耐プラズマ性があ
る。この働きにより成膜初期に透明導電膜がプラズマに
より変質することを防ぎ、かつ第３層目のＰ型層 −Ｓ
ｉ Ｃ： Ｉ−Ｉ膜は、第２層目のｐ型；１−Ｓｉ：
Ｈ膜中のボロンのオートドーピングを抑えると共に、第
３層中のボロンやＧＭがｉ層へ入るのを小さくでき、こ
の結果セル特性が向上するものである。In addition to suppressing impurity diffusion, the a-SiC:H layer also suppresses impurity diffusion.
It is chemically more stable than Hfi and has plasma resistance. This function prevents the transparent conductive film from being altered by plasma in the early stage of film formation, and the third P-type layer -S
i C: I-I film is the second layer p type; 1-Si:
Autodoping of boron in the H film can be suppressed, and boron and GM in the third layer can be prevented from entering the i layer, resulting in improved cell characteristics.
実施例１゜
第１図はｐｉｎ型アモルファスＳｉ太陽電池の構成図で
ある。１はガラス板、２は５ｎ０２の透明導電膜である
。この基板を用いて、王室分離型グロー放電装置でセル
を製造した。まずＰ室でｐ型層−ＳｉＣ：Ｈ膜３＋Ｐ型
ａ−Ｓｉ：Ｈ膜４゜Ｐ型層 −Ｓ ｉ Ｃ： Ｈ膜８を
それぞれ５層ｍ。Example 1 FIG. 1 is a block diagram of a pin type amorphous Si solar cell. 1 is a glass plate, and 2 is a 5n02 transparent conductive film. Using this substrate, a cell was manufactured using a royal separation type glow discharge device. First, in a P chamber, a p-type layer -SiC:H film 3+P-type a-Si:H film 4°P-type layer -SiC:H film 8 are formed in 5 layers each.
６層ｍ、２層ｍと順次形成し、次いでｉ室でノンドープ
層５を５００ｎｍ形成して、最後にｎ室でｎ型機結晶ａ
−Ｓ ｉ ： Ｈ層６を３０層ｍ形成した。6 layers m and 2 layers m are sequentially formed, then a non-doped layer 5 of 500 nm is formed in the i room, and finally an n-type mechanical crystal a is formed in the n room.
-S i : 30 m layers of H layer 6 were formed.
そして蒸着装置でＡα７を蒸着して裏面電極とした。こ
の太陽電池の特性は、ｖｏｃが
Ｑ、９０Ｑｖ、Ｊｇｃが１６．５ｍＡ／ｃｍ’、ＦＦが
０．７０で変換効率ｌ００４％であった。この特性を従
来の構造、すなわち２層としてｐＷＪａ−Ｓｉ Ｃ：
ｆ（膜７層ｍ＋ｐ型ａ−ｓｔ：ｔ−ｒ膜６ｎｍ−の場合
と比較すると、ＶＯＣで１５ｍＶ、 Ｊ ｓ ｃで１ｍ
Ａ／ｃｍ”上回っており、第２のｐ型ａ−ＳｉＣ膜を挿
入する効果が明らかとなった。Then, Aα7 was vapor-deposited using a vapor deposition apparatus to form a back electrode. The characteristics of this solar cell were that voc was Q, 90Qv, Jgc was 16.5 mA/cm', FF was 0.70, and conversion efficiency was 1004%. This characteristic is applied to the conventional structure, that is, two layers, pWJa-SiC:
f (compared to the case of 7-layer film m+p type a-st:tr film 6 nm-, VOC is 15 mV, J sc is 1 m
A/cm'', and the effect of inserting the second p-type a-SiC film became clear.
しかし、上記構造においてｐ室で成膜した３層の膜厚の
関係で、第１層目よりも第３層目が厚い場合にはＦＦが
悪くなり、太陽電池特性は向上しなかった。However, in the above structure, due to the thickness of the three layers formed in the p-room, if the third layer was thicker than the first layer, the FF deteriorated and the solar cell characteristics did not improve.
実施例２゜
実施例１と同様の手順と膜厚で、ｎ型ａ−ＳｉＣ：Ｈ膜
、ｎ型ａ−Ｓｉ：Ｉ（膜、ｎ型ａ−ＳｉＣ：Ｈ膜、ｉ型
ａ−Ｓｉ：Ｈ膜、Ｐ型ａ−ＳｉＣ：Ｈ膜として製造した
太陽電池においてもｖｏｃで１０ｍＶ、 Ｊ ｓ ｃで
０．７ｍＡ／ｃｍ２増加させることができた。Example 2゜N-type a-SiC:H film, n-type a-Si:I (film, n-type a-SiC:H film, i-type a-Si: Even in solar cells manufactured as H film and P-type a-SiC:H film, it was possible to increase voc by 10 mV and Jsc by 0.7 mA/cm2.
実施例３゜
実施例１と同様の手順でｐ層（ｎ層）をｐ型（ｎ型）ａ
−ＳｉＮ：Ｈ膜、ｐ型（ｎ型）ａ−Ｓｉ：Ｈ膜、Ｐ型ａ
−Ｓ ｉ Ｎ ： Ｈ膜として製造したｐｉｎ型アモ
ルファスＳｉ太陽電池においてもＶＯＣで１０ｍＶ、
Ｊ ｓ ｃで０．７ｍＡ／ａｍ２増加させることができ
た。Example 3゜The p layer (n layer) was made into p type (n type) a by the same procedure as in Example 1.
-SiN:H film, p-type (n-type) a-Si:H film, P-type a
-S i N : Even in the pin-type amorphous Si solar cell manufactured as a H film, the VOC was 10 mV,
It was possible to increase by 0.7 mA/am2 with J sc.
実施例４゜
実施例１〜３において第３層目をノンドープのａ −Ｓ
ｉ Ｃ： Ｈ膜（ａ−ＳｉＮ：Ｈ膜）としたところ、
それぞれ更に２ｍＶ、０．１ｍＡ／ｃｍ”増加した。Example 4 In Examples 1 to 3, the third layer was made of non-doped a-S.
i C:H film (a-SiN:H film),
They were further increased by 2 mV and 0.1 mA/cm'', respectively.
実施例５゜
実施例１〜３において、第１層および第３１ｊ目をノン
ドープのａ −Ｓ ｉ Ｃ： Ｈ膜（ａ−ＳｉＮ：ｉ］
膜）としたところ更にそれぞれ３ｍＶ、０．２ｍＡ／ｃ
Ｈ２増加した。Example 5 In Examples 1 to 3, the first layer and the 31jth layer are non-doped a-SiC:H films (a-SiN:i).
3 mV and 0.2 mA/c, respectively.
H2 increased.
実施例６゜
実施例１〜３において、第２層目をノンドープのａ−８
ｔ：８層としたところ、更にそれぞれ３ｍＶ、０．２ｍ
Ａ／ａｍ”増加した。Example 6゜In Examples 1 to 3, the second layer is made of non-doped a-8
t: 8 layers, each with an additional 3 mV and 0.2 m
A/am” increased.
以上の実施例から、ｐｉｎ型太陽電池の２層あるいはｎ
層５の一方のみを３層構造とするのでなく、共に３Ｍ構
造としても効果のあることは明らかである。From the above examples, it is clear that the pin type solar cell has two layers or n
It is clear that it is effective not only to make one of the layers 5 have a three-layer structure but also to make both layers 5 have a 3M structure.
本発明によれば、透明電極やドーピング層からの不純物
をｐｉ界面および１層中に入ることを押えるため、太陽
電池の変換効率を上げることができる。According to the present invention, since impurities from the transparent electrode and the doped layer are suppressed from entering the pi interface and one layer, the conversion efficiency of the solar cell can be increased.
第１図は本発明に係るアモルファスＳｉ太陽電池の構成
概念図、第２図は熱処理によるＶ。Ｃの変化を示す図、
第３図はオートドーピングによるｉＦ！Ｊ中のボロン濃
度分布を示す図である。
ｌ・・・ガラス基板、２・・・透明導電膜、３・・・ｐ
型ａ −Ｓ ｉ Ｃ： Ｈ膜、４ ・ｐ型ａ−８ｔ：Ｈ
膜、５−ａ−８ｔ：Ｈ膜、６−・・微結晶化ｎ型ａ−Ｓ
ｉ：Ｈ膜、７・・・ＡＱ組電極FIG. 1 is a conceptual diagram of the structure of an amorphous Si solar cell according to the present invention, and FIG. 2 is a diagram showing V after heat treatment. A diagram showing changes in C,
Figure 3 shows iF due to autodoping! FIG. 3 is a diagram showing the boron concentration distribution in J. l...Glass substrate, 2...Transparent conductive film, 3...p
Type a-S i C: H film, 4 ・p-type a-8t: H
Film, 5-a-8t: H film, 6-... Microcrystallized n-type a-S
i: H film, 7...AQ group electrode
Claims (1)
はｎ層、あるいはｐ層とｎ層が更に３層構造であること
を特徴とするアモルファスＳｉ太陽電池。 ２、特許請求範囲第１項に記載のアモルファスＳｉ太陽
電池において、前記３層構造が中央層はｐ型（ｎ型）ａ
−Ｓｉ：Ｈ層であり、これを挟む他の２層がｐ型（ｎ型
）ａ−ＳｉＣ：Ｈ層あるいはｐ型（ｎ型）ａ−ＳｉＮ：
Ｈ層のいずれかであることを特徴とするアモルファスＳ
ｉ太陽電池。 ３、特許請求範囲第１項に記載のアモルファスＳｉ太陽
電池において、前記３層構造が中央層はｐ型（ｎ型）ａ
−Ｓｉ：Ｈ層であり、これを挟む層がｐ型（ｎ型）ａ−
ＳｉＣ：Ｈ層およびｐ型（ｎ型）ａ−ＳｉＮ：Ｈ層であ
ることを特徴とするアモルファスＳｉ太陽電池。 ４、特許請求範囲第１項に記載のアモルファスＳｉ太陽
電池において、前記３層構造が中央層はｐ型（ｎ型）ａ
−Ｓｉ：Ｈ層であり、これを挟む層の一方がｐ型（ｎ型
）ａ−ＳｉＣ：Ｈ層あるいはｐ型（ｎ型）ａ−ＳｉＣ：
Ｎ層であり、他の層がａ−ＳｉＣ：Ｈ層あるいはａ−Ｓ
ｉＮ：Ｈ層のいずれかであることを特徴とするアモルフ
ァスＳｉ太陽電池。 ５、特許請求範囲第１項に記載のアモルファスＳｉ太陽
電池において、前記３層構造が中央層はｐ型（ｎ型）ａ
−Ｓｉ：Ｈ層であり、これを挟む２層がａ−ＳｉＣ：Ｈ
層あるいは ａ−ＳｉＮ：Ｈ層のいずれか、あるいは ａ−ＳｉＣ：Ｈ層とａ−ＳｉＮ：Ｈ層であることを特徴
とするアモルファスＳｉ太陽電池。 ６、特許請求範囲第２項から第４項のいずれかに記載の
アモルファスＳｉ太陽電池において、前記中央層がａ−
Ｓｉ：Ｈ層であることを特徴とするアモルファスＳｉ太
陽電池。 ７、特許請求範囲第２項から第６項のいずれかに記載の
アモルファスＳｉ太陽電池において、前記中央層を挟む
２層の膜厚について、太陽電池の膜厚方向に見て、中心
に近い側の層の方が遠い側よりも膜厚が薄いことを特徴
とするアモルファスＳｉ太陽電池。[Claims] 1. An amorphous Si solar cell characterized in that it has a p-layer or an n-layer, or a p-layer and an n-layer in a three-layer structure. 2. In the amorphous Si solar cell according to claim 1, in the three-layer structure, the central layer is p-type (n-type) a
-Si:H layer, and the other two layers sandwiching it are p-type (n-type) a-SiC:H layer or p-type (n-type) a-SiN:
Amorphous S characterized by being any of the H layers
i solar cell. 3. In the amorphous Si solar cell according to claim 1, in the three-layer structure, the central layer is p-type (n-type) a
-Si:H layer, and the layers sandwiching this are p-type (n-type) a-
An amorphous Si solar cell characterized by having a SiC:H layer and a p-type (n-type) a-SiN:H layer. 4. In the amorphous Si solar cell according to claim 1, in the three-layer structure, the central layer is p-type (n-type) a
-Si:H layer, and one of the layers sandwiching this is a p-type (n-type) a-SiC:H layer or a p-type (n-type) a-SiC:
N layer, other layers are a-SiC:H layer or a-S
An amorphous Si solar cell characterized by being one of iN:H layers. 5. In the amorphous Si solar cell according to claim 1, in the three-layer structure, the central layer is p-type (n-type) a
-Si:H layer, and the two layers sandwiching this are a-SiC:H
An amorphous Si solar cell characterized in that it is either a layer or an a-SiN:H layer, or an a-SiC:H layer and an a-SiN:H layer. 6. In the amorphous Si solar cell according to any one of claims 2 to 4, the central layer is a-
An amorphous Si solar cell characterized by having a Si:H layer. 7. In the amorphous Si solar cell according to any one of claims 2 to 6, regarding the film thickness of the two layers sandwiching the center layer, the side closer to the center when viewed in the film thickness direction of the solar cell An amorphous Si solar cell characterized in that the layer is thinner than the far side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62303116A JPH01145875A (en) | 1987-12-02 | 1987-12-02 | Amorphous si solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62303116A JPH01145875A (en) | 1987-12-02 | 1987-12-02 | Amorphous si solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01145875A true JPH01145875A (en) | 1989-06-07 |
| JPH0571195B2 JPH0571195B2 (en) | 1993-10-06 |
Family
ID=17917076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62303116A Granted JPH01145875A (en) | 1987-12-02 | 1987-12-02 | Amorphous si solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01145875A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0338068A (en) * | 1989-07-05 | 1991-02-19 | Sanyo Electric Co Ltd | Photoelectromotive force element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8088641B2 (en) | 2008-10-30 | 2012-01-03 | Mitsubishi Heavy Industries, Ltd. | Process for producing photovoltaic device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58192387A (en) * | 1982-04-27 | 1983-11-09 | ア−ルシ−エ− コ−ポレ−シヨン | Photocell |
| JPS6050973A (en) * | 1983-08-31 | 1985-03-22 | Agency Of Ind Science & Technol | Semiconductor device |
| JPS60242682A (en) * | 1984-05-16 | 1985-12-02 | Hitachi Maxell Ltd | Semiconductor photoelectric conversion device |
| JPS61183974A (en) * | 1985-02-12 | 1986-08-16 | Zenko Hirose | Amorphous solar cell using superlattice structure for window layer |
| JPS6233479A (en) * | 1985-08-07 | 1987-02-13 | Agency Of Ind Science & Technol | Solar cell |
| JPS62159475A (en) * | 1986-01-08 | 1987-07-15 | Hitachi Ltd | Amorphous silicon solar cell |
| JPS6384075A (en) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | Photovoltaic device |
-
1987
- 1987-12-02 JP JP62303116A patent/JPH01145875A/en active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58192387A (en) * | 1982-04-27 | 1983-11-09 | ア−ルシ−エ− コ−ポレ−シヨン | Photocell |
| JPS6050973A (en) * | 1983-08-31 | 1985-03-22 | Agency Of Ind Science & Technol | Semiconductor device |
| JPS60242682A (en) * | 1984-05-16 | 1985-12-02 | Hitachi Maxell Ltd | Semiconductor photoelectric conversion device |
| JPS61183974A (en) * | 1985-02-12 | 1986-08-16 | Zenko Hirose | Amorphous solar cell using superlattice structure for window layer |
| JPS6233479A (en) * | 1985-08-07 | 1987-02-13 | Agency Of Ind Science & Technol | Solar cell |
| JPS62159475A (en) * | 1986-01-08 | 1987-07-15 | Hitachi Ltd | Amorphous silicon solar cell |
| JPS6384075A (en) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | Photovoltaic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0338068A (en) * | 1989-07-05 | 1991-02-19 | Sanyo Electric Co Ltd | Photoelectromotive force element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0571195B2 (en) | 1993-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5066340A (en) | Photovoltaic device | |
| JP3490964B2 (en) | Photovoltaic device | |
| JPS6249672A (en) | Amorphous photovoltaic element | |
| US4781765A (en) | Photovoltaic device | |
| WO2016160535A1 (en) | Passivation layer for solar cells | |
| JPH04130671A (en) | Photovoltaic device | |
| JPS6233479A (en) | Solar cell | |
| JPS5846074B2 (en) | Method of manufacturing photovoltaic device | |
| JPS62234379A (en) | Semiconductor device | |
| JP2675754B2 (en) | Solar cell | |
| JPH0526354B2 (en) | ||
| JPH01145875A (en) | Amorphous si solar battery | |
| JPH0122991B2 (en) | ||
| JPH0424878B2 (en) | ||
| US9559236B2 (en) | Solar cell fabricated by simplified deposition process | |
| JPS6074685A (en) | Photovoltaic device | |
| JP3249619B2 (en) | Solar cell | |
| JP2002016271A (en) | Thin-film photoelectric conversion element | |
| JP3245962B2 (en) | Manufacturing method of thin film solar cell | |
| JP2744680B2 (en) | Manufacturing method of thin film solar cell | |
| JP2020505786A (en) | Single-type, tandem-type, and heterojunction-type solar cell devices and methods for forming the same | |
| JPH0282582A (en) | Laminated amorphous silicon solar cell | |
| JPH01194370A (en) | Optical power generation device | |
| JPH04290274A (en) | Photoelectric transducer | |
| JPS6358974A (en) | Amorphous phovoltaic element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |