JPS56158428A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS56158428A
JPS56158428A JP6242780A JP6242780A JPS56158428A JP S56158428 A JPS56158428 A JP S56158428A JP 6242780 A JP6242780 A JP 6242780A JP 6242780 A JP6242780 A JP 6242780A JP S56158428 A JPS56158428 A JP S56158428A
Authority
JP
Japan
Prior art keywords
cathode
polar body
plasma
anode
damage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6242780A
Other languages
Japanese (ja)
Inventor
Hikosuke Shibayama
Tetsuya Ogawa
Masato Kosugi
Norishige Hisatsugu
Koichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6242780A priority Critical patent/JPS56158428A/en
Priority to US06/262,793 priority patent/US4349409A/en
Priority to DE8181302077T priority patent/DE3165961D1/en
Priority to EP81302077A priority patent/EP0040081B1/en
Publication of JPS56158428A publication Critical patent/JPS56158428A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32587—Triode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To work a minute pattern on a workpiece with no damage and high speed by arranging an intermediate electrode less than 2mm. in thickness between a cathode and an anode. CONSTITUTION:When a polar body 7 having a hole 7a in the middle of a cathode 2 and an anode 3 is arranged, the generation of plasma is almost limitted at a space between the cathode and the intermediate polar body for gaining plasma of high density to improve etching speed. Moreover, because ion energy contributing to etching depends on a potential difference between the cathode and the intermediate polar body, it is known that there is no damage to a sample 4 and little deterioration of an electrical characteristic. When further the intermediate polar body 7 is arranged to be horizontally driven 11 and to select the thickness of the intermediate body 7 2mm. and less, the performance of a device of this kind is further improve to be extremely favorable to a plasma etching process as well as to the removal of a damaged layer caused thereby and of the contaminants on the high- molecular film caused by reaction gas.
JP6242780A 1980-05-12 1980-05-12 Plasma etching device Pending JPS56158428A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6242780A JPS56158428A (en) 1980-05-12 1980-05-12 Plasma etching device
US06/262,793 US4349409A (en) 1980-05-12 1981-05-11 Method and apparatus for plasma etching
DE8181302077T DE3165961D1 (en) 1980-05-12 1981-05-11 Method and apparatus for plasma etching
EP81302077A EP0040081B1 (en) 1980-05-12 1981-05-11 Method and apparatus for plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6242780A JPS56158428A (en) 1980-05-12 1980-05-12 Plasma etching device

Publications (1)

Publication Number Publication Date
JPS56158428A true JPS56158428A (en) 1981-12-07

Family

ID=13199846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6242780A Pending JPS56158428A (en) 1980-05-12 1980-05-12 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS56158428A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618927A (en) * 1984-06-22 1986-01-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor wafer plasma etching device
JPS61285719A (en) * 1985-06-12 1986-12-16 Nec Corp Dry etching device
JP2013519991A (en) * 2010-02-17 2013-05-30 ヴィジョン ダイナミックス ホールディング ベー．フェー． Apparatus and method for generating plasma discharge for patterning a surface of a substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5450400A (en) * 1977-09-28 1979-04-20 Chugoku Tekko Slot machine

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5450400A (en) * 1977-09-28 1979-04-20 Chugoku Tekko Slot machine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618927A (en) * 1984-06-22 1986-01-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor wafer plasma etching device
JPS61285719A (en) * 1985-06-12 1986-12-16 Nec Corp Dry etching device
JP2013519991A (en) * 2010-02-17 2013-05-30 ヴィジョン ダイナミックス ホールディング ベー．フェー． Apparatus and method for generating plasma discharge for patterning a surface of a substrate
US9161427B2 (en) 2010-02-17 2015-10-13 Vision Dynamics Holding B.V. Device and method for generating a plasma discharge for patterning the surface of a substrate

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