JPS5638820A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS5638820A JPS5638820A JP11500179A JP11500179A JPS5638820A JP S5638820 A JPS5638820 A JP S5638820A JP 11500179 A JP11500179 A JP 11500179A JP 11500179 A JP11500179 A JP 11500179A JP S5638820 A JPS5638820 A JP S5638820A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- anode
- sample
- dry etching
- etching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a high etching speed of a parallel flat plate type dry etching device without damaging a sample by a method wherein an intermediate pole body having a magnetic field generating mechanism being insulated electrically is arranged between the cathode and the anode. CONSTITUTION:An intermediate electrode 8 having a magnetic field generating mechanism is arranged between the cathode and the anode of a parallel flat plate type dry etching device consisting of a cathode 2 being put on with a sample 4, an anode 3 and a bell jar 1. By this way, as plasma is confined between the intermediate electrode 8 and the cathode 2, and as the high frequency electric power can be enlarged keeping the self bias of the cathode 2 at small that the etching can be performed in a high etching speed without damaging the surface of sample. In the bell jar, an active gas (CF4, C2F6, etc.) or an inert gas (Ar, Xe, etc.) is sealed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11500179A JPS5638820A (en) | 1979-09-07 | 1979-09-07 | Dry etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11500179A JPS5638820A (en) | 1979-09-07 | 1979-09-07 | Dry etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5638820A true JPS5638820A (en) | 1981-04-14 |
Family
ID=14651833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11500179A Pending JPS5638820A (en) | 1979-09-07 | 1979-09-07 | Dry etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5638820A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59139627A (en) * | 1983-01-31 | 1984-08-10 | Hitachi Ltd | Dry etching device |
-
1979
- 1979-09-07 JP JP11500179A patent/JPS5638820A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59139627A (en) * | 1983-01-31 | 1984-08-10 | Hitachi Ltd | Dry etching device |
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