JPS5538043A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS5538043A
JPS5538043A JP11125778A JP11125778A JPS5538043A JP S5538043 A JPS5538043 A JP S5538043A JP 11125778 A JP11125778 A JP 11125778A JP 11125778 A JP11125778 A JP 11125778A JP S5538043 A JPS5538043 A JP S5538043A
Authority
JP
Japan
Prior art keywords
pole body
intermediate pole
plasma
cathode
etching speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11125778A
Other languages
Japanese (ja)
Inventor
Koichi Kobayashi
Tetsuya Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11125778A priority Critical patent/JPS5538043A/en
Publication of JPS5538043A publication Critical patent/JPS5538043A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE: To accelerate etching speed, by arranging an intermediate pole body between a cathode and an anode, in dry etching by means of plasma.
CONSTITUTION: A discoid intermediate pole body 7 in aluminum, etc. is mounted between a cathode 2 and an anode 3, and a surface of a sample 4 is etched by generating plasma between both poles. When active gas C2F6 is introduced to a bell jar 1, inner pressure is set to 2×10-2 Torr and self-bias is set to 300V, power can be applied up to 390W. In this case, the etching speed of the sample (SiO2) is 200Å/ minute and 800Å/minute. Not only metal besides aluminum but also insulators, such as, SiO2, etc. may be used as the materials of the intermediate pole body 7. Since the generation of plasma is limited between the cathode and the intermediate pole body by means of the intermediate pole body 7 electrically insulated, the density of plasma increases, and etching speed can be improved.
COPYRIGHT: (C)1980,JPO&Japio
JP11125778A 1978-09-12 1978-09-12 Dry etching device Pending JPS5538043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11125778A JPS5538043A (en) 1978-09-12 1978-09-12 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11125778A JPS5538043A (en) 1978-09-12 1978-09-12 Dry etching device

Publications (1)

Publication Number Publication Date
JPS5538043A true JPS5538043A (en) 1980-03-17

Family

ID=14556596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11125778A Pending JPS5538043A (en) 1978-09-12 1978-09-12 Dry etching device

Country Status (1)

Country Link
JP (1) JPS5538043A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636757A (en) * 1979-08-31 1981-04-10 Nec Corp Program hysteresis recording system
EP0040081A2 (en) * 1980-05-12 1981-11-18 Fujitsu Limited Method and apparatus for plasma etching
DE3500328A1 (en) 1985-01-07 1986-07-10 Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa SPRAYING DEVICE
JPS61285719A (en) * 1985-06-12 1986-12-16 Nec Corp Dry etching device
JPS6432698A (en) * 1987-04-13 1989-02-02 Texas Instruments Inc Plasma etching of dielectric printed wiring board blind passing-through shunt
JPH09293706A (en) * 1996-04-25 1997-11-11 Nec Kagoshima Ltd Dry etching device
DE4325041B4 (en) * 1992-07-27 2004-09-09 Tokyo Electron Ltd. Aetz or plasma CVD system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122284A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Sputtering device having bias electrode
JPS52132677A (en) * 1976-01-22 1977-11-07 Western Electric Co Reactor for radiating flow

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132677A (en) * 1976-01-22 1977-11-07 Western Electric Co Reactor for radiating flow
JPS52122284A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Sputtering device having bias electrode

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636757A (en) * 1979-08-31 1981-04-10 Nec Corp Program hysteresis recording system
JPS6230459B2 (en) * 1979-08-31 1987-07-02 Nippon Electric Co
EP0040081A2 (en) * 1980-05-12 1981-11-18 Fujitsu Limited Method and apparatus for plasma etching
DE3500328A1 (en) 1985-01-07 1986-07-10 Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa SPRAYING DEVICE
JPS61285719A (en) * 1985-06-12 1986-12-16 Nec Corp Dry etching device
JPS6432698A (en) * 1987-04-13 1989-02-02 Texas Instruments Inc Plasma etching of dielectric printed wiring board blind passing-through shunt
DE4325041B4 (en) * 1992-07-27 2004-09-09 Tokyo Electron Ltd. Aetz or plasma CVD system
JPH09293706A (en) * 1996-04-25 1997-11-11 Nec Kagoshima Ltd Dry etching device

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