JPS5538043A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS5538043A JPS5538043A JP11125778A JP11125778A JPS5538043A JP S5538043 A JPS5538043 A JP S5538043A JP 11125778 A JP11125778 A JP 11125778A JP 11125778 A JP11125778 A JP 11125778A JP S5538043 A JPS5538043 A JP S5538043A
- Authority
- JP
- Japan
- Prior art keywords
- pole body
- intermediate pole
- plasma
- cathode
- etching speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
PURPOSE: To accelerate etching speed, by arranging an intermediate pole body between a cathode and an anode, in dry etching by means of plasma.
CONSTITUTION: A discoid intermediate pole body 7 in aluminum, etc. is mounted between a cathode 2 and an anode 3, and a surface of a sample 4 is etched by generating plasma between both poles. When active gas C2F6 is introduced to a bell jar 1, inner pressure is set to 2×10-2 Torr and self-bias is set to 300V, power can be applied up to 390W. In this case, the etching speed of the sample (SiO2) is 200Å/ minute and 800Å/minute. Not only metal besides aluminum but also insulators, such as, SiO2, etc. may be used as the materials of the intermediate pole body 7. Since the generation of plasma is limited between the cathode and the intermediate pole body by means of the intermediate pole body 7 electrically insulated, the density of plasma increases, and etching speed can be improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11125778A JPS5538043A (en) | 1978-09-12 | 1978-09-12 | Dry etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11125778A JPS5538043A (en) | 1978-09-12 | 1978-09-12 | Dry etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5538043A true JPS5538043A (en) | 1980-03-17 |
Family
ID=14556596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11125778A Pending JPS5538043A (en) | 1978-09-12 | 1978-09-12 | Dry etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5538043A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636757A (en) * | 1979-08-31 | 1981-04-10 | Nec Corp | Program hysteresis recording system |
EP0040081A2 (en) * | 1980-05-12 | 1981-11-18 | Fujitsu Limited | Method and apparatus for plasma etching |
DE3500328A1 (en) | 1985-01-07 | 1986-07-10 | Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa | SPRAYING DEVICE |
JPS61285719A (en) * | 1985-06-12 | 1986-12-16 | Nec Corp | Dry etching device |
JPS6432698A (en) * | 1987-04-13 | 1989-02-02 | Texas Instruments Inc | Plasma etching of dielectric printed wiring board blind passing-through shunt |
JPH09293706A (en) * | 1996-04-25 | 1997-11-11 | Nec Kagoshima Ltd | Dry etching device |
DE4325041B4 (en) * | 1992-07-27 | 2004-09-09 | Tokyo Electron Ltd. | Aetz or plasma CVD system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52122284A (en) * | 1976-04-07 | 1977-10-14 | Hitachi Ltd | Sputtering device having bias electrode |
JPS52132677A (en) * | 1976-01-22 | 1977-11-07 | Western Electric Co | Reactor for radiating flow |
-
1978
- 1978-09-12 JP JP11125778A patent/JPS5538043A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52132677A (en) * | 1976-01-22 | 1977-11-07 | Western Electric Co | Reactor for radiating flow |
JPS52122284A (en) * | 1976-04-07 | 1977-10-14 | Hitachi Ltd | Sputtering device having bias electrode |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636757A (en) * | 1979-08-31 | 1981-04-10 | Nec Corp | Program hysteresis recording system |
JPS6230459B2 (en) * | 1979-08-31 | 1987-07-02 | Nippon Electric Co | |
EP0040081A2 (en) * | 1980-05-12 | 1981-11-18 | Fujitsu Limited | Method and apparatus for plasma etching |
DE3500328A1 (en) | 1985-01-07 | 1986-07-10 | Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa | SPRAYING DEVICE |
JPS61285719A (en) * | 1985-06-12 | 1986-12-16 | Nec Corp | Dry etching device |
JPS6432698A (en) * | 1987-04-13 | 1989-02-02 | Texas Instruments Inc | Plasma etching of dielectric printed wiring board blind passing-through shunt |
DE4325041B4 (en) * | 1992-07-27 | 2004-09-09 | Tokyo Electron Ltd. | Aetz or plasma CVD system |
JPH09293706A (en) * | 1996-04-25 | 1997-11-11 | Nec Kagoshima Ltd | Dry etching device |
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