JPS54154282A - Semiconductor device - Google Patents

Abstract

PURPOSE: To secure formation of the even layer in a short time by forming the high- density impurity layer of the same conducting type as the semiconductor layer along the V-groove provided to the semiconductor layer.

CONSTITUTION: The n⁺-buried layer 12 and n-epitaxial layer 13 are laminated on n-type Si substrate 11, and V-groove 14 is cut reaching the buried layer. Then n⁺-region 15 reaching the buried layer along groove 14 is formed into layer 13 by the ion injection method, and thus layer 15 can be formed with the even high density and in a short time over the entire region. Then p⁺-layer 16, p-layer 17 and n- layer 18 are formed within n-type island 13a, and the window is drilled to SiO₂ 19 with Al electrodes 15a∼18a attached. In such constitution, the inverter of I²L uses p-layer 17 and n-type island 13a which are common to the base and the collector of the injector as the base and emitter each and n-layer 18 as the collector. Thus, the satisfactory block effect is shown since n⁺-layer 15 features the even high density, enhancing amplification factor β by 10∼15% up.

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