JPS6424472A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS6424472A JPS6424472A JP62180531A JP18053187A JPS6424472A JP S6424472 A JPS6424472 A JP S6424472A JP 62180531 A JP62180531 A JP 62180531A JP 18053187 A JP18053187 A JP 18053187A JP S6424472 A JPS6424472 A JP S6424472A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- carrier
- semiconductor photodetector
- response time
- killer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To reduce delay in response time in a photodetector converting received light into an electric current by a method wherein a carrier killer layer of a prescribed depth is provided along the outer circumference of an opposite- conductivity layer forming region on the surface of a semiconductor photodetector. CONSTITUTION:Protons or impurities are injected into the outer circumference of an opposite-conductivity layer forming region on the surface of a semiconductor photodetector, whereby the substrate crystal structure is broken down for the formation of a carrier killer layer 4 provided with a multiplicity of carrier arresting levels. Carriers generated in a region free of electric field are entrapped in the carrier killer 4 and are not allowed to come out, which speeds up the semiconductor photodetector in its responding capability. The element may be quite improved in its response time in the presence of the carrier killer 4 because a p<+>-layer 2 is sufficiently thin and positioned so near to a depletion layer 3 that there will not be any noticeable delay in response time, the depletion layer 3 if formed sufficiently deep will let little light through to land in an n-layer, and the number of carriers generated in the n-layer is quite small.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62180531A JPS6424472A (en) | 1987-07-20 | 1987-07-20 | Semiconductor photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62180531A JPS6424472A (en) | 1987-07-20 | 1987-07-20 | Semiconductor photodetector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6424472A true JPS6424472A (en) | 1989-01-26 |
Family
ID=16084892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62180531A Pending JPS6424472A (en) | 1987-07-20 | 1987-07-20 | Semiconductor photodetector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6424472A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002005355A1 (en) * | 2000-07-11 | 2002-01-17 | Sanyo Electric Co., Ltd | Light-receiving device and light-receiving module comprising it |
WO2009025048A1 (en) * | 2007-08-22 | 2009-02-26 | Nippon Telegraph And Telephone Corporation | Optical semiconductor device |
-
1987
- 1987-07-20 JP JP62180531A patent/JPS6424472A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002005355A1 (en) * | 2000-07-11 | 2002-01-17 | Sanyo Electric Co., Ltd | Light-receiving device and light-receiving module comprising it |
US6989522B2 (en) | 2000-07-11 | 2006-01-24 | Sanyo Electric Co., Ltd. | Light-receiving module and light-receiving device having malfunction preventing structure |
WO2009025048A1 (en) * | 2007-08-22 | 2009-02-26 | Nippon Telegraph And Telephone Corporation | Optical semiconductor device |
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