JPS6424472A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS6424472A
JPS6424472A JP62180531A JP18053187A JPS6424472A JP S6424472 A JPS6424472 A JP S6424472A JP 62180531 A JP62180531 A JP 62180531A JP 18053187 A JP18053187 A JP 18053187A JP S6424472 A JPS6424472 A JP S6424472A
Authority
JP
Japan
Prior art keywords
layer
carrier
semiconductor photodetector
response time
killer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62180531A
Other languages
Japanese (ja)
Inventor
Hideki Machida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62180531A priority Critical patent/JPS6424472A/en
Publication of JPS6424472A publication Critical patent/JPS6424472A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To reduce delay in response time in a photodetector converting received light into an electric current by a method wherein a carrier killer layer of a prescribed depth is provided along the outer circumference of an opposite- conductivity layer forming region on the surface of a semiconductor photodetector. CONSTITUTION:Protons or impurities are injected into the outer circumference of an opposite-conductivity layer forming region on the surface of a semiconductor photodetector, whereby the substrate crystal structure is broken down for the formation of a carrier killer layer 4 provided with a multiplicity of carrier arresting levels. Carriers generated in a region free of electric field are entrapped in the carrier killer 4 and are not allowed to come out, which speeds up the semiconductor photodetector in its responding capability. The element may be quite improved in its response time in the presence of the carrier killer 4 because a p<+>-layer 2 is sufficiently thin and positioned so near to a depletion layer 3 that there will not be any noticeable delay in response time, the depletion layer 3 if formed sufficiently deep will let little light through to land in an n-layer, and the number of carriers generated in the n-layer is quite small.
JP62180531A 1987-07-20 1987-07-20 Semiconductor photodetector Pending JPS6424472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62180531A JPS6424472A (en) 1987-07-20 1987-07-20 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62180531A JPS6424472A (en) 1987-07-20 1987-07-20 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS6424472A true JPS6424472A (en) 1989-01-26

Family

ID=16084892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62180531A Pending JPS6424472A (en) 1987-07-20 1987-07-20 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS6424472A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005355A1 (en) * 2000-07-11 2002-01-17 Sanyo Electric Co., Ltd Light-receiving device and light-receiving module comprising it
WO2009025048A1 (en) * 2007-08-22 2009-02-26 Nippon Telegraph And Telephone Corporation Optical semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005355A1 (en) * 2000-07-11 2002-01-17 Sanyo Electric Co., Ltd Light-receiving device and light-receiving module comprising it
US6989522B2 (en) 2000-07-11 2006-01-24 Sanyo Electric Co., Ltd. Light-receiving module and light-receiving device having malfunction preventing structure
WO2009025048A1 (en) * 2007-08-22 2009-02-26 Nippon Telegraph And Telephone Corporation Optical semiconductor device

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