WO2009025048A1 - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

Info

Publication number
WO2009025048A1
WO2009025048A1 PCT/JP2007/066304 JP2007066304W WO2009025048A1 WO 2009025048 A1 WO2009025048 A1 WO 2009025048A1 JP 2007066304 W JP2007066304 W JP 2007066304W WO 2009025048 A1 WO2009025048 A1 WO 2009025048A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor junction
junction layer
light receiving
semiconductor
receiving sections
Prior art date
Application number
PCT/JP2007/066304
Other languages
French (fr)
Japanese (ja)
Inventor
Takaharu Ohyama
Ikuo Ogawa
Akimasa Kaneko
Yoshiyuki Doi
Yuichi Suzuki
Katsutoshi Takatoi
Yuji Akahori
Original Assignee
Nippon Telegraph And Telephone Corporation
Ntt Electronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph And Telephone Corporation, Ntt Electronics Corporation filed Critical Nippon Telegraph And Telephone Corporation
Priority to PCT/JP2007/066304 priority Critical patent/WO2009025048A1/en
Publication of WO2009025048A1 publication Critical patent/WO2009025048A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0605—Shape
    • H01L2224/06051—Bonding areas having different shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

There is provided an array type optical semiconductor light receiving element with improved crosstalk between channels and using pin junction or pn junction. The optical semiconductor element is provided with a plurality of light receiving sections comprising a first semiconductor junction layer for receiving optical signals. Between the light receiving sections, a second semiconductor junction layer is arranged without making contact with the first semiconductor junction layer. While ensuring insulation from a first electrode that is connected to the first semiconductor junction layer without blocking optical inputs to the light receiving sections, each of second electrodes that are connected to the second semiconductor junction layer is electrically connected with each other and arranged. The light receiving sections may be two-dimensionally arranged. The first semiconductor junction layer and the second semiconductor junction layer are pin (or pn) semiconductor junction layers.
PCT/JP2007/066304 2007-08-22 2007-08-22 Optical semiconductor device WO2009025048A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/066304 WO2009025048A1 (en) 2007-08-22 2007-08-22 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/066304 WO2009025048A1 (en) 2007-08-22 2007-08-22 Optical semiconductor device

Publications (1)

Publication Number Publication Date
WO2009025048A1 true WO2009025048A1 (en) 2009-02-26

Family

ID=40377959

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/066304 WO2009025048A1 (en) 2007-08-22 2007-08-22 Optical semiconductor device

Country Status (1)

Country Link
WO (1) WO2009025048A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3864707A4 (en) * 2018-10-19 2022-03-30 Attollo Engineering, LLC Pin photodetector

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61289677A (en) * 1985-06-18 1986-12-19 Nippon Kogaku Kk <Nikon> Semiconductor light detection apparatus
JPS63224268A (en) * 1987-03-12 1988-09-19 Mitsubishi Electric Corp Semiconductor photodetector
JPS6424472A (en) * 1987-07-20 1989-01-26 Fujitsu Ltd Semiconductor photodetector
JPH05343730A (en) * 1992-06-10 1993-12-24 Fujitsu Ltd Semiconductor photodetector
JPH07250035A (en) * 1994-03-14 1995-09-26 Toshiba Corp Optical receiver
JPH0818091A (en) * 1994-06-30 1996-01-19 Mitsui Toatsu Chem Inc Semiconductor photoelectric transducer with plurality of photodiodes
JPH09289333A (en) * 1996-04-23 1997-11-04 Mitsubishi Electric Corp Semiconductor photosensitive element
JP2004303878A (en) * 2003-03-31 2004-10-28 Nippon Sheet Glass Co Ltd Photodetector array
JP2005251890A (en) * 2004-03-03 2005-09-15 Sumitomo Electric Ind Ltd Upper surface incident light receiving element array

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61289677A (en) * 1985-06-18 1986-12-19 Nippon Kogaku Kk <Nikon> Semiconductor light detection apparatus
JPS63224268A (en) * 1987-03-12 1988-09-19 Mitsubishi Electric Corp Semiconductor photodetector
JPS6424472A (en) * 1987-07-20 1989-01-26 Fujitsu Ltd Semiconductor photodetector
JPH05343730A (en) * 1992-06-10 1993-12-24 Fujitsu Ltd Semiconductor photodetector
JPH07250035A (en) * 1994-03-14 1995-09-26 Toshiba Corp Optical receiver
JPH0818091A (en) * 1994-06-30 1996-01-19 Mitsui Toatsu Chem Inc Semiconductor photoelectric transducer with plurality of photodiodes
JPH09289333A (en) * 1996-04-23 1997-11-04 Mitsubishi Electric Corp Semiconductor photosensitive element
JP2004303878A (en) * 2003-03-31 2004-10-28 Nippon Sheet Glass Co Ltd Photodetector array
JP2005251890A (en) * 2004-03-03 2005-09-15 Sumitomo Electric Ind Ltd Upper surface incident light receiving element array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3864707A4 (en) * 2018-10-19 2022-03-30 Attollo Engineering, LLC Pin photodetector
US11676976B2 (en) 2018-10-19 2023-06-13 Attollo Engineering, LLC PIN photodetector

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