NL187415C - Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. - Google Patents

Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.

Info

Publication number
NL187415C
NL187415C NLAANVRAGE8005053,A NL8005053A NL187415C NL 187415 C NL187415 C NL 187415C NL 8005053 A NL8005053 A NL 8005053A NL 187415 C NL187415 C NL 187415C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
field strength
surface field
reduced surface
reduced
Prior art date
Application number
NLAANVRAGE8005053,A
Other languages
English (en)
Dutch (nl)
Other versions
NL8005053A (nl
Inventor
Henricus Maria Joseph Vaes
Johannes Arnoldus Appels
Adrianus Willem Ludikhuize
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE8005053,A priority Critical patent/NL187415C/xx
Priority to US06/219,160 priority patent/US4422089A/en
Priority to AU74868/81A priority patent/AU544603B2/en
Priority to CA000385177A priority patent/CA1176762A/en
Priority to IT23810/81A priority patent/IT1138578B/it
Priority to IE2047/81A priority patent/IE52204B1/en
Priority to ES505199A priority patent/ES8206917A1/es
Priority to SE8105257D priority patent/SE8105257L/sv
Priority to GB8126821A priority patent/GB2083700B/en
Priority to SE8105257A priority patent/SE454732B/sv
Priority to DE3135269A priority patent/DE3135269C2/de
Priority to FR8116935A priority patent/FR2490012B1/fr
Priority to AT0386681A priority patent/AT387105B/de
Priority to JP56140465A priority patent/JPS5778168A/ja
Publication of NL8005053A publication Critical patent/NL8005053A/nl
Application granted granted Critical
Publication of NL187415C publication Critical patent/NL187415C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816Lateral DMOS transistors, i.e. LDMOS transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063Reduced surface field [RESURF] pn-junction structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873Drain regions
    • H01L29/0878Impurity concentration or distribution
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1029Channel region of field-effect devices of field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7322Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
NLAANVRAGE8005053,A 1980-09-08 1980-09-08 Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. NL187415C (nl)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NLAANVRAGE8005053,A NL187415C (nl) 1980-09-08 1980-09-08 Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US06/219,160 US4422089A (en) 1980-09-08 1980-12-22 Semiconductor device having a reduced surface field strength
AU74868/81A AU544603B2 (en) 1980-09-08 1981-09-02 Reduced surface field strength semiconductor device
CA000385177A CA1176762A (en) 1980-09-08 1981-09-03 Semiconductor device having a reduced surface field strength
IE2047/81A IE52204B1 (en) 1980-09-08 1981-09-04 Semiconductor device
ES505199A ES8206917A1 (es) 1980-09-08 1981-09-04 Un dispositivo semiconductor perfeccionado
IT23810/81A IT1138578B (it) 1980-09-08 1981-09-04 Dispositivo semiconduttore presentante una ridotta intensita'del campo superficiale
SE8105257D SE8105257L (sv) 1980-09-08 1981-09-04 Halvledaranordning
GB8126821A GB2083700B (en) 1980-09-08 1981-09-04 Semiconductor device having a reduced surface field strength
SE8105257A SE454732B (sv) 1980-09-08 1981-09-04 Halvledaranordning
DE3135269A DE3135269C2 (de) 1980-09-08 1981-09-05 Halbleiteranordnung mit herabgesetzter Oberflächenfeldstärke
FR8116935A FR2490012B1 (fr) 1980-09-08 1981-09-07 Dispositif semi-conducteur a champ superficiel reduit
AT0386681A AT387105B (de) 1980-09-08 1981-09-07 Halbleiteranordnung mit herabgesetzter oberflaechenfeldstaerke
JP56140465A JPS5778168A (en) 1980-09-08 1981-09-08 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8005053 1980-09-08
NLAANVRAGE8005053,A NL187415C (nl) 1980-09-08 1980-09-08 Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.

Publications (2)

Publication Number Publication Date
NL8005053A NL8005053A (nl) 1982-04-01
NL187415C true NL187415C (nl) 1991-09-16

Family

ID=19835848

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8005053,A NL187415C (nl) 1980-09-08 1980-09-08 Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.

Country Status (13)

Country Link
US (1) US4422089A (sv)
JP (1) JPS5778168A (sv)
AT (1) AT387105B (sv)
AU (1) AU544603B2 (sv)
CA (1) CA1176762A (sv)
DE (1) DE3135269C2 (sv)
ES (1) ES8206917A1 (sv)
FR (1) FR2490012B1 (sv)
GB (1) GB2083700B (sv)
IE (1) IE52204B1 (sv)
IT (1) IT1138578B (sv)
NL (1) NL187415C (sv)
SE (2) SE454732B (sv)

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GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
NL8103218A (nl) * 1981-07-06 1983-02-01 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
US4783688A (en) * 1981-12-02 1988-11-08 U.S. Philips Corporation Schottky barrier field effect transistors
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
US4626879A (en) * 1982-12-21 1986-12-02 North American Philips Corporation Lateral double-diffused MOS transistor devices suitable for source-follower applications
EP0115098B1 (en) * 1982-12-27 1987-03-18 Koninklijke Philips Electronics N.V. Lateral dmos transistor device having an injector region
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
US4862242A (en) * 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
GB2165090A (en) * 1984-09-26 1986-04-03 Philips Electronic Associated Improving the field distribution in high voltage semiconductor devices
JPS61171165A (ja) * 1985-01-25 1986-08-01 Nissan Motor Co Ltd Mosトランジスタ
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4823173A (en) * 1986-01-07 1989-04-18 Harris Corporation High voltage lateral MOS structure with depleted top gate region
US4868921A (en) * 1986-09-05 1989-09-19 General Electric Company High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
US4933740A (en) * 1986-11-26 1990-06-12 General Electric Company Insulated gate transistor with vertical integral diode and method of fabrication
JPS63173365A (ja) * 1986-11-26 1988-07-16 ゼネラル・エレクトリック・カンパニイ ラテラル形絶縁ゲート半導体装置とその製法
US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US4888627A (en) * 1987-05-19 1989-12-19 General Electric Company Monolithically integrated lateral insulated gate semiconductor device
US5023678A (en) * 1987-05-27 1991-06-11 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US5191401A (en) * 1989-03-10 1993-03-02 Kabushiki Kaisha Toshiba MOS transistor with high breakdown voltage
US5107312A (en) * 1989-09-11 1992-04-21 Harris Corporation Method of isolating a top gate of a MESFET and the resulting device
DE4201276C1 (sv) * 1992-01-18 1993-06-17 Daimler-Benz Aktiengesellschaft, 7000 Stuttgart, De
TW218424B (sv) * 1992-05-21 1994-01-01 Philips Nv
EP0580254A3 (en) * 1992-07-20 1996-01-03 Philips Electronics Nv Integrated semiconductor circuit
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
SE500815C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
JP2689874B2 (ja) * 1993-12-17 1997-12-10 関西日本電気株式会社 高耐圧mosトランジスタ
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
JP3547884B2 (ja) 1995-12-30 2004-07-28 三菱電機株式会社 半導体装置及びその製造方法
DE19701189B4 (de) * 1996-01-18 2005-06-30 International Rectifier Corp., El Segundo Halbleiterbauteil
DE19644821C1 (de) * 1996-10-29 1998-02-12 Daimler Benz Ag Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften
US6097205A (en) * 1997-02-14 2000-08-01 Semitest, Inc. Method and apparatus for characterizing a specimen of semiconductor material
DE10023956A1 (de) * 2000-05-16 2001-11-22 Bosch Gmbh Robert Halbleiter-Leistungsbauelement
DE10339505A1 (de) * 2003-08-27 2005-03-24 Siemens Ag Zur Befestigung in einem Kraftfahrzeug vorgesehene Einrichtung zur Reinigung einer Scheibe oder einer Streuscheibe
JP4777676B2 (ja) * 2005-03-23 2011-09-21 本田技研工業株式会社 接合型半導体装置および接合型半導体装置の製造方法
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US9577079B2 (en) 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
US9087713B2 (en) * 2012-10-12 2015-07-21 Power Integrations, Inc. Semiconductor device with shared region
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US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
JPS51117579A (en) * 1975-04-07 1976-10-15 Nec Corp Junction type field effect transistor
JPS5434684A (en) * 1977-08-23 1979-03-14 Nec Corp Manufacture of junction-type field effect transistor
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
NL184552C (nl) * 1978-07-24 1989-08-16 Philips Nv Halfgeleiderinrichting voor hoge spanningen.
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.

Also Published As

Publication number Publication date
IE52204B1 (en) 1987-08-05
FR2490012A1 (fr) 1982-03-12
AU7486881A (en) 1982-03-18
FR2490012B1 (fr) 1985-11-22
DE3135269A1 (de) 1982-06-24
AT387105B (de) 1988-12-12
SE8105257L (sv) 1982-03-09
AU544603B2 (en) 1985-06-06
CA1176762A (en) 1984-10-23
ATA386681A (de) 1988-04-15
GB2083700A (en) 1982-03-24
ES505199A0 (es) 1982-08-16
ES8206917A1 (es) 1982-08-16
DE3135269C2 (de) 1987-03-26
SE454732B (sv) 1988-05-24
GB2083700B (en) 1984-10-24
US4422089A (en) 1983-12-20
IT1138578B (it) 1986-09-17
IT8123810A0 (it) 1981-09-04
JPS5778168A (en) 1982-05-15
IE812047L (en) 1982-03-08
NL8005053A (nl) 1982-04-01
JPH033390B2 (sv) 1991-01-18

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