USD848384S1 - Transistor - Google Patents

Transistor Download PDF

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Publication number
USD848384S1
USD848384S1 US29/614,297 US201729614297F USD848384S US D848384 S1 USD848384 S1 US D848384S1 US 201729614297 F US201729614297 F US 201729614297F US D848384 S USD848384 S US D848384S
Authority
US
United States
Prior art keywords
transistor
view
ornamental design
design
perspective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/614,297
Inventor
Tien-Ching FENG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to US29/614,297 priority Critical patent/USD848384S1/en
Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FENG, TIEN-CHING
Application granted granted Critical
Publication of USD848384S1 publication Critical patent/USD848384S1/en
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Description

FIG. 1 is a perspective view of a transistor showing my new design;
FIG. 2 is another perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.
The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.

Claims (1)

    CLAIM
  1. The ornamental design for a transistor, as shown and described.
US29/614,297 2017-08-17 2017-08-17 Transistor Active USD848384S1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US29/614,297 USD848384S1 (en) 2017-08-17 2017-08-17 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29/614,297 USD848384S1 (en) 2017-08-17 2017-08-17 Transistor

Publications (1)

Publication Number Publication Date
USD848384S1 true USD848384S1 (en) 2019-05-14

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Family Applications (1)

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US29/614,297 Active USD848384S1 (en) 2017-08-17 2017-08-17 Transistor

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD952181S1 (en) * 2019-08-30 2022-05-17 Kyocera Corporation Analysis chip for biochemical testing machine

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2696575A (en) * 1953-06-05 1954-12-07 Motorola Inc Transistor unit
US2696574A (en) * 1953-06-05 1954-12-07 Motorola Inc Transistor unit
US2829257A (en) * 1956-11-09 1958-04-01 Dietz Co R E Transistor oscillator circuit
US2929753A (en) * 1957-04-11 1960-03-22 Beckman Instruments Inc Transistor structure and method
US2988652A (en) * 1954-09-27 1961-06-13 Ibm Bistable transistor circuit using 6-terminal transistor which acts as two independent transistors
US3002100A (en) * 1954-09-27 1961-09-26 Ibm Transistor circuit element
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US4339765A (en) * 1979-06-12 1982-07-13 Tokyo Shibaura Denki Kabushiki Kaisha Transistor device
US4370670A (en) * 1979-04-11 1983-01-25 Fujitsu Limited Transistor with plural parallel units
US4408387A (en) * 1981-09-28 1983-10-11 Fujitsu Limited Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
US4590666A (en) * 1981-09-28 1986-05-27 Fujitsu Limited Method for producing a bipolar transistor having a reduced base region
US4639757A (en) * 1980-12-12 1987-01-27 Hitachi, Ltd. Power transistor structure having an emitter ballast resistance
US4782378A (en) * 1982-02-25 1988-11-01 Fuji Electric Co., Ltd. Transistor having integrated stabilizing resistor and method of making thereof
US4827322A (en) * 1982-12-06 1989-05-02 Mitsubishi Benki Kabushiki Kaisha Power transistor
US4835588A (en) * 1978-03-10 1989-05-30 Fujitsu Limited Transistor
US4860082A (en) * 1984-07-08 1989-08-22 Nec Corporation Bipolar transistor
US6043507A (en) * 1997-09-24 2000-03-28 Micron Technology, Inc. Thin film transistors and methods of making
USD443253S1 (en) * 1999-07-14 2001-06-05 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor substrate
US20020189083A1 (en) * 2000-04-12 2002-12-19 Murata Manufacturing Co., Ltd. Surface-mount type switching power-supply unit and mounting method for the same
USD524763S1 (en) * 2004-03-08 2006-07-11 Mitsumi Electric Co., Ltd. Transmitting/receiving unit
US9601604B2 (en) * 2012-09-25 2017-03-21 Pst Sensors (Proprietary) Limited Current switching transistor
US9748379B2 (en) * 2015-06-25 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Double exponential mechanism controlled transistor

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2696574A (en) * 1953-06-05 1954-12-07 Motorola Inc Transistor unit
US2696575A (en) * 1953-06-05 1954-12-07 Motorola Inc Transistor unit
US2988652A (en) * 1954-09-27 1961-06-13 Ibm Bistable transistor circuit using 6-terminal transistor which acts as two independent transistors
US3002100A (en) * 1954-09-27 1961-09-26 Ibm Transistor circuit element
US2829257A (en) * 1956-11-09 1958-04-01 Dietz Co R E Transistor oscillator circuit
US2929753A (en) * 1957-04-11 1960-03-22 Beckman Instruments Inc Transistor structure and method
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US4835588A (en) * 1978-03-10 1989-05-30 Fujitsu Limited Transistor
US4370670A (en) * 1979-04-11 1983-01-25 Fujitsu Limited Transistor with plural parallel units
US4339765A (en) * 1979-06-12 1982-07-13 Tokyo Shibaura Denki Kabushiki Kaisha Transistor device
US4639757A (en) * 1980-12-12 1987-01-27 Hitachi, Ltd. Power transistor structure having an emitter ballast resistance
US4590666A (en) * 1981-09-28 1986-05-27 Fujitsu Limited Method for producing a bipolar transistor having a reduced base region
US4408387A (en) * 1981-09-28 1983-10-11 Fujitsu Limited Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
US4782378A (en) * 1982-02-25 1988-11-01 Fuji Electric Co., Ltd. Transistor having integrated stabilizing resistor and method of making thereof
US4827322A (en) * 1982-12-06 1989-05-02 Mitsubishi Benki Kabushiki Kaisha Power transistor
US4860082A (en) * 1984-07-08 1989-08-22 Nec Corporation Bipolar transistor
US6043507A (en) * 1997-09-24 2000-03-28 Micron Technology, Inc. Thin film transistors and methods of making
USD443253S1 (en) * 1999-07-14 2001-06-05 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor substrate
US20020189083A1 (en) * 2000-04-12 2002-12-19 Murata Manufacturing Co., Ltd. Surface-mount type switching power-supply unit and mounting method for the same
USD524763S1 (en) * 2004-03-08 2006-07-11 Mitsumi Electric Co., Ltd. Transmitting/receiving unit
US9601604B2 (en) * 2012-09-25 2017-03-21 Pst Sensors (Proprietary) Limited Current switching transistor
US9748379B2 (en) * 2015-06-25 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Double exponential mechanism controlled transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD952181S1 (en) * 2019-08-30 2022-05-17 Kyocera Corporation Analysis chip for biochemical testing machine

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