US2696574A - Transistor unit - Google Patents

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US2696574A
US2696574A US359909A US35990953A US2696574A US 2696574 A US2696574 A US 2696574A US 359909 A US359909 A US 359909A US 35990953 A US35990953 A US 35990953A US 2696574 A US2696574 A US 2696574A
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crystal
metallic
base
pair
edges
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Gerald C Rich
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Motorola Solutions Inc
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Motorola Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

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  • the present invention relates to semi-conductor transistor units and more particularly to an improved and simplified transistor unit of the point contact type.
  • the point contact type of transistor usually comprises a crystal of semi-conductive material, such as germanium or silicon, that has been treated with impurities of the donor or acceptor types to form an N or P type semi-conductor.
  • the point contact type of transistor usually includes a pair of electrodes known respectively as emitterand collector which extend perpendicularly to a surface of the crystal and having pointed extremities in contact with that surface.
  • a third electrode which is usually in the form of a metal block or tab, is also provided and aflixed to another surface of the crystal to constitute a base electrode for the unit.
  • the emitter and collector electrodes of prior art transistor units usually take the form of a pair of pointed fine wires or thin metallic ribbons supported to extend in spaced parallel relation perpendicular to one face of the crystal. These electrodes usually have a diameter of the order of .002" with a spacing between their points of .002". Moreover, the crystal is usually a cube with a .032" side. Therefore, the transistor unit is an extremely small device and the fine wire emitter and collector electrodes are of microscopic dimensions and spacing. This spacing of such electrodes, it is difiicult, if not impossible,
  • Another object of the invention is to provide such an improved point contact transistor unit that is rugged in its construction and which possesses a high degree of mechanical stability.
  • a feature of the invention is the provision of a pair of resilient metallic strips supported in a unique manner on an insulating base and having bent-over ends which extend parallel to one another with edges at their extremities constituting the emitter and collector electrodes for the unit.
  • a semi-conductive crystal is resiliently supported against the bent-over ends by a base electrode with an edge of the crystal traversing the edges of the bent-over ends and in electrical contact therewith.
  • Another feature of the invention is the provision of such an improved transistor unit in which the edges of the bent-over ends of the resilient metallic strips mentioned above are each sharpened to a knife edge and are inclined in opposite directions, the crystal being resiliently supported by the base electrode so that an edge thereof contacts the knife edges of the bent-over ends at the apex formed thereby.
  • This construction allows the crystal to be resiliently supported and accurately positioned against the knife edges, and eliminates any tendency for the crystal to shift laterally along the knife edges.
  • Yet another feature of the invention is the provision of a thin sheet of insulating material interposed between the bent-over ends of the resilient metallic strips to insulate and separate these ends and eliminate the need for accuratemicroscopic spacing between the ends during the fabrication of the unit.
  • the transistor unit of the present invention comprises a flat insulating base with a pair of rigid spaced parallel metallic leads extending perpendicularly through the base at the respective ends thereof.
  • a pair of resilient metal lic strips are secured respectively at one end to the leads and extend toward one another in a plane essentially perpendicular to the plane of the base.
  • the metallic strips each have a turned-up end, and these turned-up ends are in spaced parallel relation and have respective edges at the extremities thereof.
  • a third rigid metallic lead extends through the base perpendicularly thereto and intermediate the first mentioned pair of leads.
  • a semiconductive crystal is provided which has a pair of inclined faces having an edge formed by the line of juncture between such faces.
  • a resilient metallic strip is secured to the third metallic lead at one end and has its other end soldered to another face of the crystal.
  • the last mentioned end of the metallic strip constitutes a base electrode for the crystal, and the metallic strip supports the crystal against the turned-up ends of the pair of strips with the edge of the crystal contacting the edges of the turned-up ends in transverse relation thereto.
  • the transistor unit of the invention includes a flat insulating base 10 having a pair of rigid metallic leads 11 and 12 extending perpendicularly therethrough at opposite ends thereof.
  • a pair of resilient metallic strips 13, 14 composed, for example, of Phosphor bronze are respectively Welded at one end to leads 11 and 12.
  • the metallic strips 13 and 14 extend inwardly from leads 11 and 12in a plane essentially perpendicular to the plane of insulating base 10 and have a pair of bent-over ends 13:: and 14a which extend parallel to one another.
  • the ends 13a and 14a have respective edges 13b and 14b which are sharpened to a knife edge and which are oppositely inclined to form an apex therebetween.
  • Insulating material 15 can be composed, for example, of a material marketed under the trade-mark of Teflon.
  • a third rigid metallic lead 16 extends perpendicularly through base 10 intermediate leads 11 and 12 and has an S shape.
  • Crystal 19 has a pair of inclined faces 20, 21 with the line of juncture therebetween forming an edge of the crystal.
  • Resilient strip 17 supports the crystal with its edges transversing the edges 13b and 14b of bent-over ends 13a and 14a in electrical contact therewith.
  • the end 18 of strip 17 forms a base electrode for the crystal 19 and electrical connection is made to the base through lead 16 andstrip 17.
  • the edges 13b and 14b of the bent-over end of strips 13 and 14 constitute respectively the emitter and collector electrodes for the crystal and each make a point contact with the edge of the crystal at spaced points along that edge. Electrical connection is made to the emitter electrode through lead 11 and portion 13; whereas electrical connection may be made .to the collector electrode through lead 12 and portion 14.
  • the crystal is resiliently suspended, by the construgtion described above, between base electrode 18 and knife edges 13b and 14b, and is held firmly against lateral shifting along the knife edges due to the inclined configuration of these edges.
  • the improved transistor unit of the present invention may be constructed in a relatively simple manner and no accurate and delicate spacing of the various electrodes thereof is required during the 'manufacturing process.
  • 'strip 13 may first be welded to lead '11 and film 15 adhered to the bent-over portion of that strip.
  • the bent-over portion 14a of strip 14 is then brought against the other face of the insulating film and strip 14 is welded to lead 12.
  • the unit may be assembled with the bent-over portions in contactjwith one another and the insulating film then slipped between'them.
  • the metallic strip 17 may then be Welded to lead 14 and soldered to the crystal, the edge of the'crystal being-accurately brought to the de sired point ofcontact between'it "and the edges 13! and 14b by'the inclined configuration of these edges.
  • the resulting assembly is relatively rugged since, inls'tead of fine and delicate vi/ireelectrodes, the electrodes .are formed by metallic strips which are'supported in an improved manner to maintain the crystal in properposition'therebetween. Moreover, there is no need for minutespacin'g adjustments during the manufacturing process since theemitter and collector electrodes are ac- ,cur'atelyspacea and insulated by the film 15.
  • a circuit element including in combination, a fiat insulating-base, apair of rigid spaced parallel metallic leads extending perpendicularly through said base, a
  • a cireuitelement including in combination, a base portion, apairof rigid-electrically conductive supporting j'leads extending ,th'roughfs'aidbase and spacedone from the other, 'a pair of resilient electrically conductive "supporting members respectively secured to: said leads and extend 'tbw rdnn nqther sa d e ilie mb each havingaturned-upend, and the turned-upends of said resilient r'nembers being in spaced parallel relation and' having respectivefedg'es at the extremities thereof, a :third rigid electrically co'nductive supporting lead extending throughfsaid base,-a semi-conductiveidevice having 'a'pair of inclined faces with an *edge' formed b'y ,the line of juncture between said faces, and a resilienfielec- 'trically' conductive member secured to said third lead and to said semi-conductive device for'su'ppor'ting' said device
  • a circuit element including in combination, a fiat insulating "base, a pair “of spaced "partner ri'g'id 'inetanie leads extending perpendicularly through said base at the respective ends thereof, a pair of resilient metallic strips each having one end secured to and in electrical contact with a respective one of said leads, said strips extending toward one another in a planeessentially perpendicular to the plane of said base and having ninety degree bentover parallel adjacent ends, said bent-over ends forming electrodes and having oppositely inclined knife edges at the extremities.
  • a circuit element including in combination, aflat insulating base,'a pair of spaced parallel rigid metallic 'leads extending perpendicularly through 'said base, a pair of resilient metallic strips respectively secured to said leads and extending toward one another in a plane essentially perpendicular to the plane of said base, said metallic strips each having a turned-up end, and the turnedup ends of said strips being parallelon'e to the other and havingrespective oppositely inclined knife edges at the extremities'thereof forming an apex therebetween, a sheet of insulating material interposed between said turnedup ends to separate and insulate said turned-up ends from one another, a third rigid metallic lead extending through said base, a semi-conductive device having "a pair of inclined faces with an edge formed by the line of-junctu're betwee'nsaid faces, and a resilient metallic strip secured to said third metallic lead and to said semiconductive'device for supporting said'device against said turned-up ends'of said pai'r of metallics

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)

Description

G. C. RICH TRANSISTOR UNIT Dec. 7, 1954 Filed June 5, 1955 I BY Z2161 I p 2,696,574 E'Patentecl Dec. 7, 1954 TRANSISTOR UNIT Gerald C. Rich, Scottsdale, Ariz., assignor to Motorola Inc., Chicago, Ill., a corporation of Illinois Application June 5, 1953, Serial No. 359,909
5 Claims. (Cl. 317235) The present invention relates to semi-conductor transistor units and more particularly to an improved and simplified transistor unit of the point contact type.
The point contact type of transistor usually comprises a crystal of semi-conductive material, such as germanium or silicon, that has been treated with impurities of the donor or acceptor types to form an N or P type semi-conductor.
The point contact type of transistor usually includes a pair of electrodes known respectively as emitterand collector which extend perpendicularly to a surface of the crystal and having pointed extremities in contact with that surface. A third electrode, which is usually in the form of a metal block or tab, is also provided and aflixed to another surface of the crystal to constitute a base electrode for the unit.
The emitter and collector electrodes of prior art transistor units usually take the form of a pair of pointed fine wires or thin metallic ribbons supported to extend in spaced parallel relation perpendicular to one face of the crystal. These electrodes usually have a diameter of the order of .002" with a spacing between their points of .002". Moreover, the crystal is usually a cube with a .032" side. Therefore, the transistor unit is an extremely small device and the fine wire emitter and collector electrodes are of microscopic dimensions and spacing. This spacing of such electrodes, it is difiicult, if not impossible,
to achieve any degree of uniformity between individual ones of a plurality of transistor units constructed in this manner. Moreover, the use of fine wires for the collector and emitter electrodes in point contact transistor units usually results in a device that is extremely delicate and which has a relatively low mechanical stability.
It is an object of the present invention to provide an improved point contact transistor unit that may be manufactured easily and with a minimum of mechanical skill, and which is so constructed that uniform characteristics may be attained between individual ones of a quantity of transistor units manufactured in accordance with the invention.
Another object of the invention is to provide such an improved point contact transistor unit that is rugged in its construction and which possesses a high degree of mechanical stability.
A feature of the invention is the provision of a pair of resilient metallic strips supported in a unique manner on an insulating base and having bent-over ends which extend parallel to one another with edges at their extremities constituting the emitter and collector electrodes for the unit. A semi-conductive crystal is resiliently supported against the bent-over ends by a base electrode with an edge of the crystal traversing the edges of the bent-over ends and in electrical contact therewith.
Another feature of the invention is the provision of such an improved transistor unit in which the edges of the bent-over ends of the resilient metallic strips mentioned above are each sharpened to a knife edge and are inclined in opposite directions, the crystal being resiliently supported by the base electrode so that an edge thereof contacts the knife edges of the bent-over ends at the apex formed thereby. This construction allows the crystal to be resiliently supported and accurately positioned against the knife edges, and eliminates any tendency for the crystal to shift laterally along the knife edges.
Yet another feature of the invention is the provision of a thin sheet of insulating material interposed between the bent-over ends of the resilient metallic strips to insulate and separate these ends and eliminate the need for accuratemicroscopic spacing between the ends during the fabrication of the unit.
The above and other features of the invention which are believed to be new are set forth with particularity in the appended claims. The invention itself, however, together with further objects and advantages thereof, may best be understood by reference to the following description when taken in conjunction with the accompanying drawing in which the single figure shows a preferred embodiment of the invention.
The transistor unit of the present invention comprises a flat insulating base with a pair of rigid spaced parallel metallic leads extending perpendicularly through the base at the respective ends thereof. A pair of resilient metal lic strips are secured respectively at one end to the leads and extend toward one another in a plane essentially perpendicular to the plane of the base. The metallic strips each have a turned-up end, and these turned-up ends are in spaced parallel relation and have respective edges at the extremities thereof. A third rigid metallic lead extends through the base perpendicularly thereto and intermediate the first mentioned pair of leads. A semiconductive crystal is provided which has a pair of inclined faces having an edge formed by the line of juncture between such faces. Finally, a resilient metallic strip is secured to the third metallic lead at one end and has its other end soldered to another face of the crystal. The last mentioned end of the metallic strip constitutes a base electrode for the crystal, and the metallic strip supports the crystal against the turned-up ends of the pair of strips with the edge of the crystal contacting the edges of the turned-up ends in transverse relation thereto.
The transistor unit of the invention includes a flat insulating base 10 having a pair of rigid metallic leads 11 and 12 extending perpendicularly therethrough at opposite ends thereof. A pair of resilient metallic strips 13, 14 composed, for example, of Phosphor bronze are respectively Welded at one end to leads 11 and 12. The metallic strips 13 and 14 extend inwardly from leads 11 and 12in a plane essentially perpendicular to the plane of insulating base 10 and have a pair of bent-over ends 13:: and 14a which extend parallel to one another. The ends 13a and 14a have respective edges 13b and 14b which are sharpened to a knife edge and which are oppositely inclined to form an apex therebetween.
The bent-over ends 13a and 14a are separated and insulated by a sheet or film 15 of insulating material which is interposed between these ends and which, for example, may have a thickness of 1 mil. Insulating material 15 can be composed, for example, of a material marketed under the trade-mark of Teflon.
A third rigid metallic lead 16 extends perpendicularly through base 10 intermediate leads 11 and 12 and has an S shape. A resilient metallic strip 17, which also may be composed of Phosphor bronze, is welded to the upper side of lead 16 and has a bent-over end 18 whichis soldered to a parallelopiped semi-conductive crystal block 19, the end 18 of strip 17 forming a base electrode for the crystal. Crystal 19 has a pair of inclined faces 20, 21 with the line of juncture therebetween forming an edge of the crystal. Resilient strip 17 supports the crystal with its edges transversing the edges 13b and 14b of bent-over ends 13a and 14a in electrical contact therewith.
With the construction described above, the end 18 of strip 17 forms a base electrode for the crystal 19 and electrical connection is made to the base through lead 16 andstrip 17. The edges 13b and 14b of the bent-over end of strips 13 and 14 constitute respectively the emitter and collector electrodes for the crystal and each make a point contact with the edge of the crystal at spaced points along that edge. Electrical connection is made to the emitter electrode through lead 11 and portion 13; whereas electrical connection may be made .to the collector electrode through lead 12 and portion 14.
edges 13b and 14?).
The crystal is resiliently suspended, by the construgtion described above, between base electrode 18 and knife edges 13b and 14b, and is held firmly against lateral shifting along the knife edges due to the inclined configuration of these edges.
The improved transistor unit of the present invention may be constructed in a relatively simple manner and no accurate and delicate spacing of the various electrodes thereof is required during the 'manufacturing process. In the construction of the unit,'strip 13 may first be welded to lead '11 and film 15 adhered to the bent-over portion of that strip. The bent-over portion 14a of strip 14is then brought against the other face of the insulating film and strip 14 is welded to lead 12. Alternately, the unit may be assembled with the bent-over portions in contactjwith one another and the insulating film then slipped between'them. The metallic strip 17 may then be Welded to lead 14 and soldered to the crystal, the edge of the'crystal being-accurately brought to the de sired point ofcontact between'it "and the edges 13!) and 14b by'the inclined configuration of these edges.
The resulting assembly is relatively rugged since, inls'tead of fine and delicate vi/ireelectrodes, the electrodes .are formed by metallic strips which are'supported in an improved manner to maintain the crystal in properposition'therebetween. Moreover, there is no need for minutespacin'g adjustments during the manufacturing process since theemitter and collector electrodes are ac- ,cur'atelyspacea and insulated by the film 15. In addition, there is no requirement for manual locating of these electrodeson the crystal edge, since the proper loeationis obtained automatically due to the inclination of With'this construction the units may be assembled rapidly and with a minimum of re- "jects, and individual units of a plur'ality'so assembled exhibit uniform characteristics since 'a standardized spacing "andlocat'ion of the electrodes may be achieved.
' While a particularembodiment of the invention has beenshown and described, modifications may be made and itis intended in the appended claimsto cover all such'modificatio'ns as fall'within the true spirit and scope of the invention.
I'claim:
1. A circuit element including in combination, a fiat insulating-base, apair of rigid spaced parallel metallic leads extending perpendicularly through said base, a
pair of resilient'metallicstrips respectively secured to said leads 'andextending toward one another in a plane essentially perpendicular'to the plane of said base, said metallic stripseach having a turned-up end, and the turned-up ends of said strips being in spaced parallel relationfa'nd "having respective edges at the extremities thereof, a third rigid metallic lead extending throu'ghsaid base, a'semi-conductive 'devicehaving a pair of inclined faces with,an edge formed by thel'ineLOfjuncture between saidfaces, and a resilient metallicfstrip's'ecured to said third metallic lead, and to saidse'mi-conductivedevice for'supporting'said device aga'instfsaid, turned-up ends of said metallic strips'w'ithsaid edge of said devicec'ontacting said edges of said turned-up ends in transverse relation thereto. 7
2. A cireuitelementincluding in combination, a base portion, apairof rigid-electrically conductive supporting j'leads extending ,th'roughfs'aidbase and spacedone from the other, 'a pair of resilient electrically conductive "supporting members respectively secured to: said leads and extend 'tbw rdnn nqther sa d e ilie mb each havingaturned-upend, and the turned-upends of said resilient r'nembers being in spaced parallel relation and' having respectivefedg'es at the extremities thereof, a :third rigid electrically co'nductive supporting lead extending throughfsaid base,-a semi-conductiveidevice having 'a'pair of inclined faces with an *edge' formed b'y ,the line of juncture between said faces, and a resilienfielec- 'trically' conductive member secured to said third lead and to said semi-conductive device for'su'ppor'ting' said device "againsr' aiq lt ur'ried upfends' ofsaid first mentioned resilient supporting members 'with"said edge of said-devicecontac'tiiig 'said edgesef s'aid turned-up ends in transverse relation thereto.
Number 3 A circuit element including in combination, a fiat insulating "base, a pair "of spaced "partner ri'g'id 'inetanie leads extending perpendicularly through said base at the respective ends thereof, a pair of resilient metallic strips each having one end secured to and in electrical contact with a respective one of said leads, said strips extending toward one another in a planeessentially perpendicular to the plane of said base and having ninety degree bentover parallel adjacent ends, said bent-over ends forming electrodes and having oppositely inclined knife edges at the extremities. thereof forming an apex therebetween, a sheet of insulating'materialinterposed'between said bentover ends to separate and insulate said bent-over ends from one another, a third rigid metallic lead extending through said ba'seintermediate said pair of leads, a semiconductive crystal having a'pair of inclined faces with an edge formed by the line of juncture between said faces, and a resilient metallic strip secured to said third metallic lead at one end-and secured to another face of said crystal at its other end, said last mentionedend forming an electrode for 'said crystal and said last mentioned strip supporting said crystal against said bentover ends of said pair of metallic strips with said edge of said crystal contacting said'knife edges of said 'bentover ends in transverse relation thereto at the apex formed thereby.
4. A circuit element including in combination, aflat insulating base,'a pair of spaced parallel rigid metallic 'leads extending perpendicularly through 'said base, a pair of resilient metallic strips respectively secured to said leads and extending toward one another in a plane essentially perpendicular to the plane of said base, said metallic strips each having a turned-up end, and the turnedup ends of said strips being parallelon'e to the other and havingrespective oppositely inclined knife edges at the extremities'thereof forming an apex therebetween, a sheet of insulating material interposed between said turnedup ends to separate and insulate said turned-up ends from one another, a third rigid metallic lead extending through said base, a semi-conductive device having "a pair of inclined faces with an edge formed by the line of-junctu're betwee'nsaid faces, and a resilient metallic strip secured to said third metallic lead and to said semiconductive'device for supporting said'device against said turned-up ends'of said pai'r of metallicstrips with said I towardbne another in a plane essentially perpendicular to the plane of said'base and having'turned-upends in mutually spaced parallel relation, said turned-up ends forming electrodes and having respective knife edges at the extremities thereof, a third rigid metallic leadextending through -said base, a semi-conductive crystal having a pair of inclined faces with anedge formed'by theline of juncture between said faces, and a resilient metallic strip secured to said third metallic lead atone end and secured .to' a further face of said semi-conductive crystal at'its other-end, said last-mentioned end forming an eleetrodefor said semi-conductive crystal, and said last mentioned strip supporting saidicry'stal against said turned-upends'of saidpair'of metallicstrips with said edge of said'crystal contacting said 'knife edges'of said turned-up ends 'intransverse relation thereto.
References Citedin the file of this patent UNITED, STATES PATENTS Name Date 2,609,427 -St'elmak Sept. 2, '1952 2,641,639 Slade June-9, 1953 2,671,189 Gaudlitz'u- Mar. 2, 1954
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2779902A (en) * 1953-05-15 1957-01-29 Motorola Inc Semi-conductor unit
US2779903A (en) * 1953-04-30 1957-01-29 Motorola Inc Semi-conductor unit
US2825857A (en) * 1953-12-31 1958-03-04 Ibm Contact structure
US2882462A (en) * 1953-09-29 1959-04-14 Gen Electric Semiconductor device
US2919387A (en) * 1953-06-05 1959-12-29 Texas Instruments Inc Point contact semiconductor device
US2948951A (en) * 1957-11-19 1960-08-16 Edwin F Dillaby Formation of point contact transistors
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2609427A (en) * 1949-05-31 1952-09-02 Rca Corp Three-electrode semiconductor device
US2641639A (en) * 1949-12-23 1953-06-09 Rca Corp Point electrode for semiconductor devices
US2671189A (en) * 1949-11-28 1954-03-02 Siemens Ag Semiconductor amplifier having a resiliently adjustably mounted semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2609427A (en) * 1949-05-31 1952-09-02 Rca Corp Three-electrode semiconductor device
US2671189A (en) * 1949-11-28 1954-03-02 Siemens Ag Semiconductor amplifier having a resiliently adjustably mounted semiconductor
US2641639A (en) * 1949-12-23 1953-06-09 Rca Corp Point electrode for semiconductor devices

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2779903A (en) * 1953-04-30 1957-01-29 Motorola Inc Semi-conductor unit
US2779902A (en) * 1953-05-15 1957-01-29 Motorola Inc Semi-conductor unit
US2919387A (en) * 1953-06-05 1959-12-29 Texas Instruments Inc Point contact semiconductor device
US2882462A (en) * 1953-09-29 1959-04-14 Gen Electric Semiconductor device
US2825857A (en) * 1953-12-31 1958-03-04 Ibm Contact structure
US2948951A (en) * 1957-11-19 1960-08-16 Edwin F Dillaby Formation of point contact transistors
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

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