GB2183907B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2183907B
GB2183907B GB8627267A GB8627267A GB2183907B GB 2183907 B GB2183907 B GB 2183907B GB 8627267 A GB8627267 A GB 8627267A GB 8627267 A GB8627267 A GB 8627267A GB 2183907 B GB2183907 B GB 2183907B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8627267A
Other versions
GB2183907A (en
GB8627267D0 (en
Inventor
Gerard J Shaw
Jok Ying Go
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB8627267D0 publication Critical patent/GB8627267D0/en
Publication of GB2183907A publication Critical patent/GB2183907A/en
Application granted granted Critical
Publication of GB2183907B publication Critical patent/GB2183907B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/652—Integrated injection logic using vertical injector structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
GB8627267A 1985-11-27 1986-11-14 Semiconductor device Expired GB2183907B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80239785A 1985-11-27 1985-11-27

Publications (3)

Publication Number Publication Date
GB8627267D0 GB8627267D0 (en) 1986-12-17
GB2183907A GB2183907A (en) 1987-06-10
GB2183907B true GB2183907B (en) 1989-10-04

Family

ID=25183590

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8627267A Expired GB2183907B (en) 1985-11-27 1986-11-14 Semiconductor device

Country Status (4)

Country Link
JP (1) JPS62132355A (en)
DE (1) DE3640438A1 (en)
FR (1) FR2595869B1 (en)
GB (1) GB2183907B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2634321B1 (en) * 1988-07-13 1992-04-10 Sgs Thomson Microelectronics INTEGRATED CIRCUIT STRUCTURE IMPROVING ISOLATION BETWEEN COMPONENTS

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1450293A (en) * 1973-05-14 1976-09-22 Sony Corp Semiconductor integrated circuits
GB1450626A (en) * 1973-02-02 1976-09-22 Philips Electronic Associated Semiconductor devices
GB1450749A (en) * 1973-09-26 1976-09-29 Rca Corp Semiconductor darlington circuit
GB1488958A (en) * 1975-03-25 1977-10-19 Texas Instruments Ltd Fast switching darlington circuit
GB1498531A (en) * 1974-04-26 1978-01-18 Western Electric Co Semiconductor integrated injection logic cell
GB1539426A (en) * 1975-04-04 1979-01-31 Hitachi Ltd Power transistor device
GB2018511A (en) * 1978-04-07 1979-10-17 Philips Nv Semiconductor device
EP0022687A1 (en) * 1979-06-12 1981-01-21 Thomson-Csf Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it
EP0138517A1 (en) * 1983-10-11 1985-04-24 AT&T Corp. Semiconductor integrated circuits containing complementary metal oxide semiconductor devices
EP0139371A1 (en) * 1983-08-12 1985-05-02 Tektronix, Inc. Process for manufacturing a MOS integrated circuit employing a method of forming refractory metal silicide areas

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
DE2952318C2 (en) * 1979-12-24 1986-09-18 Telefunken electronic GmbH, 7100 Heilbronn Integrated circuit arrangement and method for making it
US4512076A (en) * 1982-12-20 1985-04-23 Raytheon Company Semiconductor device fabrication process

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1450626A (en) * 1973-02-02 1976-09-22 Philips Electronic Associated Semiconductor devices
GB1450293A (en) * 1973-05-14 1976-09-22 Sony Corp Semiconductor integrated circuits
GB1450749A (en) * 1973-09-26 1976-09-29 Rca Corp Semiconductor darlington circuit
GB1498531A (en) * 1974-04-26 1978-01-18 Western Electric Co Semiconductor integrated injection logic cell
GB1488958A (en) * 1975-03-25 1977-10-19 Texas Instruments Ltd Fast switching darlington circuit
GB1539426A (en) * 1975-04-04 1979-01-31 Hitachi Ltd Power transistor device
GB2018511A (en) * 1978-04-07 1979-10-17 Philips Nv Semiconductor device
US4288807A (en) * 1978-04-07 1981-09-08 U.S. Philips Corporation Darlington circuit having an improved diode drain
EP0022687A1 (en) * 1979-06-12 1981-01-21 Thomson-Csf Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it
EP0139371A1 (en) * 1983-08-12 1985-05-02 Tektronix, Inc. Process for manufacturing a MOS integrated circuit employing a method of forming refractory metal silicide areas
EP0138517A1 (en) * 1983-10-11 1985-04-24 AT&T Corp. Semiconductor integrated circuits containing complementary metal oxide semiconductor devices

Also Published As

Publication number Publication date
GB2183907A (en) 1987-06-10
FR2595869B1 (en) 1991-04-19
GB8627267D0 (en) 1986-12-17
DE3640438A1 (en) 1987-07-02
FR2595869A1 (en) 1987-09-18
JPS62132355A (en) 1987-06-15

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941114