GB2183907B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2183907B
GB2183907B GB8627267A GB8627267A GB2183907B GB 2183907 B GB2183907 B GB 2183907B GB 8627267 A GB8627267 A GB 8627267A GB 8627267 A GB8627267 A GB 8627267A GB 2183907 B GB2183907 B GB 2183907B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8627267A
Other versions
GB2183907A (en
GB8627267D0 (en
Inventor
Gerard J Shaw
Jok Ying Go
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB8627267D0 publication Critical patent/GB8627267D0/en
Publication of GB2183907A publication Critical patent/GB2183907A/en
Application granted granted Critical
Publication of GB2183907B publication Critical patent/GB2183907B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
GB8627267A 1985-11-27 1986-11-14 Semiconductor device Expired GB2183907B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80239785A 1985-11-27 1985-11-27

Publications (3)

Publication Number Publication Date
GB8627267D0 GB8627267D0 (en) 1986-12-17
GB2183907A GB2183907A (en) 1987-06-10
GB2183907B true GB2183907B (en) 1989-10-04

Family

ID=25183590

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8627267A Expired GB2183907B (en) 1985-11-27 1986-11-14 Semiconductor device

Country Status (4)

Country Link
JP (1) JPS62132355A (en)
DE (1) DE3640438A1 (en)
FR (1) FR2595869B1 (en)
GB (1) GB2183907B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2634321B1 (en) * 1988-07-13 1992-04-10 Sgs Thomson Microelectronics INTEGRATED CIRCUIT STRUCTURE IMPROVING ISOLATION BETWEEN COMPONENTS

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1450626A (en) * 1973-02-02 1976-09-22 Philips Electronic Associated Semiconductor devices
GB1450293A (en) * 1973-05-14 1976-09-22 Sony Corp Semiconductor integrated circuits
GB1450749A (en) * 1973-09-26 1976-09-29 Rca Corp Semiconductor darlington circuit
GB1488958A (en) * 1975-03-25 1977-10-19 Texas Instruments Ltd Fast switching darlington circuit
GB1498531A (en) * 1974-04-26 1978-01-18 Western Electric Co Semiconductor integrated injection logic cell
GB1539426A (en) * 1975-04-04 1979-01-31 Hitachi Ltd Power transistor device
GB2018511A (en) * 1978-04-07 1979-10-17 Philips Nv Semiconductor device
EP0022687A1 (en) * 1979-06-12 1981-01-21 Thomson-Csf Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it
EP0138517A1 (en) * 1983-10-11 1985-04-24 AT&T Corp. Semiconductor integrated circuits containing complementary metal oxide semiconductor devices
EP0139371A1 (en) * 1983-08-12 1985-05-02 Tektronix, Inc. Process for manufacturing a MOS integrated circuit employing a method of forming refractory metal silicide areas

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
DE2952318C2 (en) * 1979-12-24 1986-09-18 Telefunken electronic GmbH, 7100 Heilbronn Integrated circuit arrangement and method for making it
US4512076A (en) * 1982-12-20 1985-04-23 Raytheon Company Semiconductor device fabrication process

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1450626A (en) * 1973-02-02 1976-09-22 Philips Electronic Associated Semiconductor devices
GB1450293A (en) * 1973-05-14 1976-09-22 Sony Corp Semiconductor integrated circuits
GB1450749A (en) * 1973-09-26 1976-09-29 Rca Corp Semiconductor darlington circuit
GB1498531A (en) * 1974-04-26 1978-01-18 Western Electric Co Semiconductor integrated injection logic cell
GB1488958A (en) * 1975-03-25 1977-10-19 Texas Instruments Ltd Fast switching darlington circuit
GB1539426A (en) * 1975-04-04 1979-01-31 Hitachi Ltd Power transistor device
GB2018511A (en) * 1978-04-07 1979-10-17 Philips Nv Semiconductor device
US4288807A (en) * 1978-04-07 1981-09-08 U.S. Philips Corporation Darlington circuit having an improved diode drain
EP0022687A1 (en) * 1979-06-12 1981-01-21 Thomson-Csf Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it
EP0139371A1 (en) * 1983-08-12 1985-05-02 Tektronix, Inc. Process for manufacturing a MOS integrated circuit employing a method of forming refractory metal silicide areas
EP0138517A1 (en) * 1983-10-11 1985-04-24 AT&T Corp. Semiconductor integrated circuits containing complementary metal oxide semiconductor devices

Also Published As

Publication number Publication date
GB2183907A (en) 1987-06-10
FR2595869A1 (en) 1987-09-18
FR2595869B1 (en) 1991-04-19
JPS62132355A (en) 1987-06-15
GB8627267D0 (en) 1986-12-17
DE3640438A1 (en) 1987-07-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941114