JPS5248066B2 - - Google Patents

Info

Publication number
JPS5248066B2
JPS5248066B2 JP2426174A JP2426174A JPS5248066B2 JP S5248066 B2 JPS5248066 B2 JP S5248066B2 JP 2426174 A JP2426174 A JP 2426174A JP 2426174 A JP2426174 A JP 2426174A JP S5248066 B2 JPS5248066 B2 JP S5248066B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2426174A
Other languages
Japanese (ja)
Other versions
JPS50119584A (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2426174A priority Critical patent/JPS5248066B2/ja
Priority to FR7505097A priority patent/FR2263624B1/fr
Priority to NL7501990.A priority patent/NL165891C/xx
Priority to GB7109/75A priority patent/GB1502953A/en
Priority to DE2507357A priority patent/DE2507357C2/de
Publication of JPS50119584A publication Critical patent/JPS50119584A/ja
Priority to US05/627,863 priority patent/US4121177A/en
Publication of JPS5248066B2 publication Critical patent/JPS5248066B2/ja
Priority to US05/895,374 priority patent/US4213805A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP2426174A 1973-05-28 1974-03-04 Expired JPS5248066B2 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2426174A JPS5248066B2 (fr) 1974-03-04 1974-03-04
FR7505097A FR2263624B1 (fr) 1974-03-04 1975-02-19
NL7501990.A NL165891C (nl) 1974-03-04 1975-02-19 Werkwijze voor de vervaardiging van een halfgeleider- inrichting.
GB7109/75A GB1502953A (en) 1974-03-04 1975-02-20 Semiconductor device and a method of fabricating the same
DE2507357A DE2507357C2 (de) 1974-03-04 1975-02-20 Halbleiterbauelement und Verfahren zu seiner Herstellung
US05/627,863 US4121177A (en) 1973-05-28 1975-10-31 Semiconductor device and a method of fabricating the same
US05/895,374 US4213805A (en) 1973-05-28 1978-04-11 Liquid phase epitaxy method of forming a filimentary laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2426174A JPS5248066B2 (fr) 1974-03-04 1974-03-04

Publications (2)

Publication Number Publication Date
JPS50119584A JPS50119584A (fr) 1975-09-19
JPS5248066B2 true JPS5248066B2 (fr) 1977-12-07

Family

ID=12133281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2426174A Expired JPS5248066B2 (fr) 1973-05-28 1974-03-04

Country Status (5)

Country Link
JP (1) JPS5248066B2 (fr)
DE (1) DE2507357C2 (fr)
FR (1) FR2263624B1 (fr)
GB (1) GB1502953A (fr)
NL (1) NL165891C (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576273B2 (fr) * 1975-03-08 1982-02-04
JPS531482A (en) * 1976-06-25 1978-01-09 Mitsubishi Electric Corp Semiconductor injection type laser
NL7609607A (nl) * 1976-08-30 1978-03-02 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
CA1147045A (fr) * 1978-09-20 1983-05-24 Naoki Chinone Laser a semiconducteur
FR2502847A1 (fr) * 1981-03-25 1982-10-01 Western Electric Co Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant
GB2154059B (en) * 1984-01-25 1987-10-28 Hitachi Ltd Light emitting chip and communication apparatus using the same
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
GB2156584B (en) * 1984-03-16 1987-11-04 Hitachi Ltd Semiconductor laser chip
WO2004073125A1 (fr) * 2003-02-12 2004-08-26 Sharp Kabushiki Kaisha Dispositif laser a semi-conducteurs, tete optique et enregistreur de donnees

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359508A (en) * 1964-02-19 1967-12-19 Gen Electric High power junction laser structure
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
DE2137892C3 (de) * 1971-07-29 1978-05-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
DE2165539C3 (de) * 1971-12-30 1979-12-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Doppelhetero-Diodenlaser auf Halb' leiterbasis

Also Published As

Publication number Publication date
DE2507357A1 (de) 1975-09-11
DE2507357C2 (de) 1983-08-11
NL165891B (nl) 1980-12-15
GB1502953A (en) 1978-03-08
JPS50119584A (fr) 1975-09-19
FR2263624A1 (fr) 1975-10-03
NL7501990A (nl) 1975-09-08
FR2263624B1 (fr) 1982-12-17
NL165891C (nl) 1981-05-15

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