ES519470A0 - Un dispositivo semiconductor. - Google Patents
Un dispositivo semiconductor.Info
- Publication number
- ES519470A0 ES519470A0 ES519470A ES519470A ES519470A0 ES 519470 A0 ES519470 A0 ES 519470A0 ES 519470 A ES519470 A ES 519470A ES 519470 A ES519470 A ES 519470A ES 519470 A0 ES519470 A0 ES 519470A0
- Authority
- ES
- Spain
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Optical Head (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8200414A NL8200414A (nl) | 1982-02-04 | 1982-02-04 | Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
Publications (2)
Publication Number | Publication Date |
---|---|
ES519470A0 true ES519470A0 (es) | 1983-11-16 |
ES8401284A1 ES8401284A1 (es) | 1983-11-16 |
Family
ID=19839193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES519470A Expired ES8401284A1 (es) | 1982-02-04 | 1983-02-02 | Un dispositivo semiconductor. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0086008A3 (es) |
JP (1) | JPS58134492A (es) |
AU (1) | AU1087283A (es) |
ES (1) | ES8401284A1 (es) |
NL (1) | NL8200414A (es) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4747110A (en) * | 1985-02-13 | 1988-05-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device capable of emitting laser beams of different wavelengths |
JPS61287289A (ja) * | 1985-06-14 | 1986-12-17 | Sharp Corp | 光メモリ用半導体レ−ザ装置 |
US4843031A (en) * | 1987-03-17 | 1989-06-27 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating compound semiconductor laser using selective irradiation |
DE3728568A1 (de) * | 1987-08-27 | 1989-03-16 | Telefunken Electronic Gmbh | Halbleiterlaseranordnung |
US6136623A (en) * | 1998-05-06 | 2000-10-24 | Xerox Corporation | Multiple wavelength laser arrays by flip-chip bonding |
CN112067123A (zh) | 2014-09-23 | 2020-12-11 | 赫普塔冈微光有限公司 | 紧凑、功率有效的堆叠宽带光学发射器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4873090A (es) * | 1971-12-27 | 1973-10-02 | ||
NL8101409A (nl) * | 1981-03-23 | 1982-10-18 | Philips Nv | Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
-
1982
- 1982-02-04 NL NL8200414A patent/NL8200414A/nl not_active Application Discontinuation
-
1983
- 1983-01-26 EP EP83200122A patent/EP0086008A3/en not_active Withdrawn
- 1983-02-01 AU AU10872/83A patent/AU1087283A/en not_active Abandoned
- 1983-02-02 JP JP58014701A patent/JPS58134492A/ja active Pending
- 1983-02-02 ES ES519470A patent/ES8401284A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU1087283A (en) | 1983-08-11 |
EP0086008A2 (en) | 1983-08-17 |
ES8401284A1 (es) | 1983-11-16 |
JPS58134492A (ja) | 1983-08-10 |
NL8200414A (nl) | 1983-09-01 |
EP0086008A3 (en) | 1985-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19971001 |