DE3475653D1 - Resolution device for semiconductor thin films - Google Patents

Resolution device for semiconductor thin films

Info

Publication number
DE3475653D1
DE3475653D1 DE8484111472T DE3475653T DE3475653D1 DE 3475653 D1 DE3475653 D1 DE 3475653D1 DE 8484111472 T DE8484111472 T DE 8484111472T DE 3475653 T DE3475653 T DE 3475653T DE 3475653 D1 DE3475653 D1 DE 3475653D1
Authority
DE
Germany
Prior art keywords
thin films
semiconductor thin
resolution device
resolution
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484111472T
Other languages
German (de)
Inventor
Hideki - Copo Iwamot Matsunaga
Naoyuki Hirate
Akira Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3475653D1 publication Critical patent/DE3475653D1/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/74—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using flameless atomising, e.g. graphite furnaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/40—Concentrating samples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/40—Concentrating samples
    • G01N1/4044—Concentrating samples by chemical techniques; Digestion; Chemical decomposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Geology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE8484111472T 1983-09-26 1984-09-26 Resolution device for semiconductor thin films Expired DE3475653D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58176503A JPH0658927B2 (en) 1983-09-26 1983-09-26 Method for analyzing semiconductor thin film and device for collecting sample for analysis

Publications (1)

Publication Number Publication Date
DE3475653D1 true DE3475653D1 (en) 1989-01-19

Family

ID=16014776

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484111472T Expired DE3475653D1 (en) 1983-09-26 1984-09-26 Resolution device for semiconductor thin films

Country Status (4)

Country Link
US (1) US4584886A (en)
EP (1) EP0137409B1 (en)
JP (1) JPH0658927B2 (en)
DE (1) DE3475653D1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211129A (en) * 1985-07-08 1987-01-20 Toshiba Corp Apparatus for forming and decomposing semiconductive membrane
JPS62142843U (en) * 1986-03-04 1987-09-09
JPH08233709A (en) * 1988-04-25 1996-09-13 Toshiba Corp Method for measuring impurities
US4990459A (en) * 1988-04-25 1991-02-05 Kabushiki Kaisha Toshiba Impurity measuring method
JPH0625717B2 (en) * 1988-04-25 1994-04-06 株式会社東芝 Impurity measurement method
US5395446A (en) * 1988-11-21 1995-03-07 Kabushiki Kaisha Toshiba Semiconductor treatment apparatus
US5014217A (en) * 1989-02-09 1991-05-07 S C Technology, Inc. Apparatus and method for automatically identifying chemical species within a plasma reactor environment
US5248614A (en) * 1991-09-12 1993-09-28 Taiwan Semiconductor Manufacturing Company Thin film sampling method for film composition quantitative analysis
JP2537946Y2 (en) * 1991-12-28 1997-06-04 山村商事株式会社 vending machine
US5395482A (en) * 1992-11-13 1995-03-07 Fuji Photo Film Co., Ltd. Ultra high purity vapor phase treatment
JP2716923B2 (en) * 1993-03-26 1998-02-18 株式会社東芝 Measurement method for organic substances adsorbed on semiconductor substrate surface
EP0653623B1 (en) * 1993-05-21 2003-04-02 Daikin Industries, Limited Method of determining trace metallic impurities in fluoropolymer and process for producing fluoropolymer thereby
JP3278513B2 (en) * 1993-12-09 2002-04-30 株式会社東芝 Method for analyzing impurities in semiconductor substrate
JP3051013B2 (en) * 1993-12-21 2000-06-12 株式会社東芝 Impurity analysis method
US6077451A (en) * 1996-03-28 2000-06-20 Kabushiki Kaisha Toshiba Method and apparatus for etching of silicon materials
US6168961B1 (en) 1998-05-21 2001-01-02 Memc Electronic Materials, Inc. Process for the preparation of epitaxial wafers for resistivity measurements
WO2015074181A1 (en) * 2013-11-19 2015-05-28 成都市产品质量监督检验院 Nitrogen blowing apparatus and wet dissolving method using nitrogen blowing apparatus
CN115433580B (en) * 2022-10-27 2023-08-18 湖北九宁化学科技有限公司 Production method of etching solution in photoelectric industry

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824016A (en) * 1972-06-16 1974-07-16 R Woodriff Combined sample collection and vaporization system for spectro-chemical analysis
US3976377A (en) * 1975-02-03 1976-08-24 Rca Corporation Method of obtaining the distribution profile of electrically active ions implanted in a semiconductor
JPS5310974A (en) * 1976-07-17 1978-01-31 Mitsubishi Electric Corp Etching method of oxide film
JPS5950928B2 (en) * 1978-02-17 1984-12-11 松下電器産業株式会社 Frameless atomic absorption spectrometry
US4361401A (en) * 1978-05-22 1982-11-30 Instrumentation Laboratory Inc. Automatic sample deposition in flameless analysis
JPS552982A (en) * 1978-06-23 1980-01-10 Matsushita Electric Ind Co Ltd Semi-conductor layer thickness measuring method
JPS5560807A (en) * 1978-11-01 1980-05-08 Chino Works Ltd Measuring instrument for film
JPS5590838A (en) * 1978-12-28 1980-07-09 Fujitsu Ltd Method of fabricating sample for use in permeative electron microscope
JPS55125632A (en) * 1979-03-23 1980-09-27 Fujitsu Ltd Etching
JPS5714736A (en) * 1980-06-30 1982-01-26 Mitsubishi Chem Ind Ltd Rapid, wet-type sample decomposing device
JPS5726734A (en) * 1980-07-24 1982-02-12 Toshiba Corp Analysis of si in gaas
JPS57204432A (en) * 1981-06-11 1982-12-15 Mitsubishi Heavy Ind Ltd Testing method for discoloration by gas diffusion
JPS58740A (en) * 1981-06-26 1983-01-05 Toshiba Corp Determination of trace element in gallium-arsenic

Also Published As

Publication number Publication date
US4584886A (en) 1986-04-29
EP0137409A3 (en) 1986-06-25
JPH0658927B2 (en) 1994-08-03
EP0137409B1 (en) 1988-12-14
JPS6069531A (en) 1985-04-20
EP0137409A2 (en) 1985-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)