GB8429621D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB8429621D0
GB8429621D0 GB848429621A GB8429621A GB8429621D0 GB 8429621 D0 GB8429621 D0 GB 8429621D0 GB 848429621 A GB848429621 A GB 848429621A GB 8429621 A GB8429621 A GB 8429621A GB 8429621 D0 GB8429621 D0 GB 8429621D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB848429621A
Other versions
GB2151398A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Publication of GB8429621D0 publication Critical patent/GB8429621D0/en
Publication of GB2151398A publication Critical patent/GB2151398A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
GB08429621A 1983-12-14 1984-11-23 A semiconductor pressure sensor and a method of manufacture thereof Withdrawn GB2151398A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23427683A JPS60126871A (en) 1983-12-14 1983-12-14 Semiconductor pressure-sensitive device and manufacture thereof

Publications (2)

Publication Number Publication Date
GB8429621D0 true GB8429621D0 (en) 1985-01-03
GB2151398A GB2151398A (en) 1985-07-17

Family

ID=16968428

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08429621A Withdrawn GB2151398A (en) 1983-12-14 1984-11-23 A semiconductor pressure sensor and a method of manufacture thereof

Country Status (2)

Country Link
JP (1) JPS60126871A (en)
GB (1) GB2151398A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207804B (en) * 1987-08-06 1990-08-15 Stc Plc Pressure sensor and manufacturing process therefor
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JPH01315172A (en) * 1988-06-15 1989-12-20 Komatsu Ltd Stress converting element and its manufacture
US5245504A (en) * 1989-02-28 1993-09-14 United Technologies Corporation Methodology for manufacturing hinged diaphragms for semiconductor sensors
US5225377A (en) * 1991-05-03 1993-07-06 Honeywell Inc. Method for micromachining semiconductor material
JP3261544B2 (en) * 1991-10-03 2002-03-04 キヤノン株式会社 Method for manufacturing cantilever drive mechanism, method for manufacturing probe drive mechanism, cantilever drive mechanism, probe drive mechanism, multi-probe drive mechanism using same, scanning tunneling microscope, information processing apparatus
AU660358B2 (en) * 1992-03-30 1995-06-22 Awa Microelectronics Pty Limited Silicon transducer
DE4309917A1 (en) * 1992-03-30 1993-10-07 Awa Microelectronics Process for the production of silicon microstructures and silicon microstructure
DE4309207C2 (en) * 1993-03-22 1996-07-11 Texas Instruments Deutschland Semiconductor device with a piezoresistive pressure sensor
DE69512544T2 (en) * 1994-03-18 2000-05-25 Foxboro Co Semiconductor pressure transducer with single crystal silicon membrane and single crystal strain gauges and manufacturing process therefor
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
DE102017108582A1 (en) * 2017-04-21 2018-10-25 Epcos Ag Sheet resistance and thin film sensor

Also Published As

Publication number Publication date
GB2151398A (en) 1985-07-17
JPS60126871A (en) 1985-07-06

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)