GB8702881D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB8702881D0
GB8702881D0 GB878702881A GB8702881A GB8702881D0 GB 8702881 D0 GB8702881 D0 GB 8702881D0 GB 878702881 A GB878702881 A GB 878702881A GB 8702881 A GB8702881 A GB 8702881A GB 8702881 D0 GB8702881 D0 GB 8702881D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878702881A
Other versions
GB2186426A (en
GB2186426B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8702881D0 publication Critical patent/GB8702881D0/en
Publication of GB2186426A publication Critical patent/GB2186426A/en
Application granted granted Critical
Publication of GB2186426B publication Critical patent/GB2186426B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
GB08702881A 1983-12-26 1987-02-09 Semiconductor device and method of fabrication thereof Expired GB2186426B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243801A JPH0646662B2 (en) 1983-12-26 1983-12-26 Semiconductor device

Publications (3)

Publication Number Publication Date
GB8702881D0 true GB8702881D0 (en) 1987-03-18
GB2186426A GB2186426A (en) 1987-08-12
GB2186426B GB2186426B (en) 1988-01-06

Family

ID=17109142

Family Applications (2)

Application Number Title Priority Date Filing Date
GB08432417A Expired GB2152284B (en) 1983-12-26 1984-12-21 Semiconductor device and protective circuit
GB08702881A Expired GB2186426B (en) 1983-12-26 1987-02-09 Semiconductor device and method of fabrication thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB08432417A Expired GB2152284B (en) 1983-12-26 1984-12-21 Semiconductor device and protective circuit

Country Status (7)

Country Link
JP (1) JPH0646662B2 (en)
KR (1) KR930001564B1 (en)
DE (1) DE3446928A1 (en)
FR (1) FR2561042B1 (en)
GB (2) GB2152284B (en)
HK (2) HK41790A (en)
IT (1) IT1179545B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169468A (en) * 1986-01-22 1987-07-25 Nec Corp Semiconductor integrated circuit device
JPS63119574A (en) * 1986-11-07 1988-05-24 Toshiba Corp Manufacture of semiconductor device
US5183773A (en) * 1989-04-13 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device including such input protection transistor
US5142345A (en) * 1989-04-13 1992-08-25 Mitsubishi Denki Kabushiki Kaisha Structure of input protection transistor in semiconductor device including memory transistor having double-layered gate and method of manufacturing semiconductor device including such input protection transistor
JP2953192B2 (en) * 1991-05-29 1999-09-27 日本電気株式会社 Semiconductor integrated circuit
JP3456242B2 (en) * 1993-01-07 2003-10-14 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US373249A (en) * 1887-11-15 Clock
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
DE2545871B2 (en) * 1974-12-06 1980-06-19 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Field effect transistor with improved stability of the threshold voltage
NL176322C (en) * 1976-02-24 1985-03-18 Philips Nv SEMICONDUCTOR DEVICE WITH SAFETY CIRCUIT.
DE2940954A1 (en) * 1979-10-09 1981-04-23 Nixdorf Computer Ag, 4790 Paderborn METHOD FOR THE PRODUCTION OF HIGH-VOLTAGE MOS TRANSISTORS CONTAINING MOS-INTEGRATED CIRCUITS AND CIRCUIT ARRANGEMENT FOR SWITCHING POWER CIRCUITS USING SUCH HIGH-VOLTAGE MOS TRANSISTORS
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
US4366613A (en) * 1980-12-17 1983-01-04 Ibm Corporation Method of fabricating an MOS dynamic RAM with lightly doped drain
JPS57188364U (en) * 1981-05-25 1982-11-30
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
HK48090A (en) 1990-06-29
GB2152284A (en) 1985-07-31
IT1179545B (en) 1987-09-16
FR2561042B1 (en) 1988-11-10
IT8424246A0 (en) 1984-12-24
GB2186426A (en) 1987-08-12
FR2561042A1 (en) 1985-09-13
KR850005166A (en) 1985-08-21
DE3446928A1 (en) 1985-07-04
HK41790A (en) 1990-06-08
GB8432417D0 (en) 1985-02-06
JPH0646662B2 (en) 1994-06-15
GB2152284B (en) 1988-01-06
GB2186426B (en) 1988-01-06
KR930001564B1 (en) 1993-03-04
JPS60136374A (en) 1985-07-19

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20021221