IT1179545B - SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS MANUFACTURE - Google Patents

SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS MANUFACTURE

Info

Publication number
IT1179545B
IT1179545B IT24246/84A IT2424684A IT1179545B IT 1179545 B IT1179545 B IT 1179545B IT 24246/84 A IT24246/84 A IT 24246/84A IT 2424684 A IT2424684 A IT 2424684A IT 1179545 B IT1179545 B IT 1179545B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
semiconductor device
semiconductor
Prior art date
Application number
IT24246/84A
Other languages
Italian (it)
Other versions
IT8424246A0 (en
Inventor
Iwai Hidetoshi
Mitsusada Kazumichi
Ishihara Masamichi
Matsumoto Tetsuro
Miyazawa Kazuyuki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8424246A0 publication Critical patent/IT8424246A0/en
Application granted granted Critical
Publication of IT1179545B publication Critical patent/IT1179545B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
IT24246/84A 1983-12-26 1984-12-24 SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS MANUFACTURE IT1179545B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243801A JPH0646662B2 (en) 1983-12-26 1983-12-26 Semiconductor device

Publications (2)

Publication Number Publication Date
IT8424246A0 IT8424246A0 (en) 1984-12-24
IT1179545B true IT1179545B (en) 1987-09-16

Family

ID=17109142

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24246/84A IT1179545B (en) 1983-12-26 1984-12-24 SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS MANUFACTURE

Country Status (7)

Country Link
JP (1) JPH0646662B2 (en)
KR (1) KR930001564B1 (en)
DE (1) DE3446928A1 (en)
FR (1) FR2561042B1 (en)
GB (2) GB2152284B (en)
HK (2) HK41790A (en)
IT (1) IT1179545B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169468A (en) * 1986-01-22 1987-07-25 Nec Corp Semiconductor integrated circuit device
JPS63119574A (en) * 1986-11-07 1988-05-24 Toshiba Corp Manufacture of semiconductor device
US5183773A (en) * 1989-04-13 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device including such input protection transistor
US5142345A (en) * 1989-04-13 1992-08-25 Mitsubishi Denki Kabushiki Kaisha Structure of input protection transistor in semiconductor device including memory transistor having double-layered gate and method of manufacturing semiconductor device including such input protection transistor
JP2953192B2 (en) * 1991-05-29 1999-09-27 日本電気株式会社 Semiconductor integrated circuit
JP3456242B2 (en) * 1993-01-07 2003-10-14 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US373249A (en) * 1887-11-15 Clock
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
DE2545871B2 (en) * 1974-12-06 1980-06-19 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Field effect transistor with improved stability of the threshold voltage
NL176322C (en) * 1976-02-24 1985-03-18 Philips Nv SEMICONDUCTOR DEVICE WITH SAFETY CIRCUIT.
DE2940954A1 (en) * 1979-10-09 1981-04-23 Nixdorf Computer Ag, 4790 Paderborn METHOD FOR THE PRODUCTION OF HIGH-VOLTAGE MOS TRANSISTORS CONTAINING MOS-INTEGRATED CIRCUITS AND CIRCUIT ARRANGEMENT FOR SWITCHING POWER CIRCUITS USING SUCH HIGH-VOLTAGE MOS TRANSISTORS
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
US4366613A (en) * 1980-12-17 1983-01-04 Ibm Corporation Method of fabricating an MOS dynamic RAM with lightly doped drain
JPS57188364U (en) * 1981-05-25 1982-11-30
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
HK48090A (en) 1990-06-29
GB2152284A (en) 1985-07-31
FR2561042B1 (en) 1988-11-10
IT8424246A0 (en) 1984-12-24
GB8702881D0 (en) 1987-03-18
GB2186426A (en) 1987-08-12
FR2561042A1 (en) 1985-09-13
KR850005166A (en) 1985-08-21
DE3446928A1 (en) 1985-07-04
HK41790A (en) 1990-06-08
GB8432417D0 (en) 1985-02-06
JPH0646662B2 (en) 1994-06-15
GB2152284B (en) 1988-01-06
GB2186426B (en) 1988-01-06
KR930001564B1 (en) 1993-03-04
JPS60136374A (en) 1985-07-19

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961223