ES525514A0 - Procedimiento para fabricar un dispositivo semiconductor. - Google Patents
Procedimiento para fabricar un dispositivo semiconductor.Info
- Publication number
- ES525514A0 ES525514A0 ES525514A ES525514A ES525514A0 ES 525514 A0 ES525514 A0 ES 525514A0 ES 525514 A ES525514 A ES 525514A ES 525514 A ES525514 A ES 525514A ES 525514 A0 ES525514 A0 ES 525514A0
- Authority
- ES
- Spain
- Prior art keywords
- procedure
- manufacture
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/416,472 US4414066A (en) | 1982-09-10 | 1982-09-10 | Electrochemical photoetching of compound semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8405998A1 ES8405998A1 (es) | 1984-06-16 |
ES525514A0 true ES525514A0 (es) | 1984-06-16 |
Family
ID=23650116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES525514A Granted ES525514A0 (es) | 1982-09-10 | 1983-09-08 | Procedimiento para fabricar un dispositivo semiconductor. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4414066A (es) |
EP (1) | EP0106477A3 (es) |
JP (1) | JPS5966126A (es) |
CA (1) | CA1198620A (es) |
ES (1) | ES525514A0 (es) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4689125A (en) * | 1982-09-10 | 1987-08-25 | American Telephone & Telegraph Co., At&T Bell Labs | Fabrication of cleaved semiconductor lasers |
US4608138A (en) * | 1984-02-16 | 1986-08-26 | Mitsubishi Denki Kabushiki Kaisha | Electrolytic method and apparatus |
US4559116A (en) * | 1984-07-09 | 1985-12-17 | Minnesota Mining And Manufacturing Company | Process of etching semiconductor electrodes |
US4730198A (en) * | 1984-11-26 | 1988-03-08 | American Telephone And Telegraph Company, At&T Bell Laboratories | Aligning arrays of optoelectronic devices to arrays of optical fibers |
US4622114A (en) * | 1984-12-20 | 1986-11-11 | At&T Bell Laboratories | Process of producing devices with photoelectrochemically produced gratings |
US4613417A (en) * | 1984-12-28 | 1986-09-23 | At&T Bell Laboratories | Semiconductor etching process |
DE3608604A1 (de) * | 1986-03-14 | 1987-09-17 | Siemens Ag | Strukturierbares fotoelektrochemisches abtragen |
DE3879771D1 (de) * | 1987-05-27 | 1993-05-06 | Siemens Ag | Aetzverfahren zum erzeugen von lochoeffnungen oder graeben in n-dotiertem silizium. |
US5322814A (en) * | 1987-08-05 | 1994-06-21 | Hughes Aircraft Company | Multiple-quantum-well semiconductor structures with selective electrical contacts and method of fabrication |
US5250471A (en) * | 1988-12-26 | 1993-10-05 | The Furukawa Electric Co. | Method for manufacturing compound semiconductor devices including a step where the semiconductor is etched without exposure to light |
JPH0465815A (ja) * | 1990-07-06 | 1992-03-02 | Matsushita Electric Ind Co Ltd | パターン作成方法 |
DE4036895A1 (de) * | 1990-11-20 | 1992-05-21 | Messerschmitt Boelkow Blohm | Elektrochemisches verfahren zum anisotropen aetzen von silizium |
US6034001A (en) * | 1991-10-16 | 2000-03-07 | Kulite Semiconductor Products, Inc. | Method for etching of silicon carbide semiconductor using selective etching of different conductivity types |
US5312516A (en) * | 1992-04-20 | 1994-05-17 | Texas Instruments Incorporated | Anisotropic tantalum pentoxide etch |
US5374330A (en) * | 1992-04-20 | 1994-12-20 | Texas Instruments Incorporated | Anisotropic barium strontium titanate etch |
US5238530A (en) * | 1992-04-20 | 1993-08-24 | Texas Instruments Incorporated | Anisotropic titanate etch |
US5238529A (en) * | 1992-04-20 | 1993-08-24 | Texas Instruments Incorporated | Anisotropic metal oxide etch |
US5418114A (en) * | 1992-09-30 | 1995-05-23 | Texas Instruments Incorporated | Anisotropic liquid phase photochemical mercury cadmium telluride etch |
US5279702A (en) * | 1992-09-30 | 1994-01-18 | Texas Instruments Incorporated | Anisotropic liquid phase photochemical copper etch |
US5338416A (en) * | 1993-02-05 | 1994-08-16 | Massachusetts Institute Of Technology | Electrochemical etching process |
US5464509A (en) * | 1994-05-20 | 1995-11-07 | Massachusetts Institute Of Technology | P-N junction etch-stop technique for electrochemical etching of semiconductors |
JPH1041285A (ja) * | 1996-07-23 | 1998-02-13 | Advantest Corp | InGaP層の食刻方法 |
JP4445716B2 (ja) * | 2003-05-30 | 2010-04-07 | 日立ソフトウエアエンジニアリング株式会社 | ナノ粒子製造方法 |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7968273B2 (en) * | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US20080246076A1 (en) * | 2007-01-03 | 2008-10-09 | Nanosys, Inc. | Methods for nanopatterning and production of nanostructures |
US20090136785A1 (en) * | 2007-01-03 | 2009-05-28 | Nanosys, Inc. | Methods for nanopatterning and production of magnetic nanostructures |
CN101999162A (zh) * | 2007-12-14 | 2011-03-30 | 纳米系统公司 | 形成衬底元件的方法 |
US8540889B1 (en) | 2008-11-19 | 2013-09-24 | Nanosys, Inc. | Methods of generating liquidphobic surfaces |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3041258A (en) * | 1960-06-24 | 1962-06-26 | Thomas V Sikina | Method of etching and etching solution for use therewith |
GB1556778A (en) * | 1977-03-11 | 1979-11-28 | Post Office | Preparation of semiconductor surfaces |
US4351706A (en) * | 1980-03-27 | 1982-09-28 | International Business Machines Corporation | Electrochemically eroding semiconductor device |
US4276098A (en) * | 1980-03-31 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Batch processing of semiconductor devices |
US4389291A (en) * | 1981-06-19 | 1983-06-21 | Bell Telephone Laboratories, Incorporated | Photoelectrochemical processing of InP-type devices |
-
1982
- 1982-09-10 US US06/416,472 patent/US4414066A/en not_active Expired - Lifetime
-
1983
- 1983-08-10 CA CA000434273A patent/CA1198620A/en not_active Expired
- 1983-09-01 EP EP83305070A patent/EP0106477A3/en not_active Withdrawn
- 1983-09-08 ES ES525514A patent/ES525514A0/es active Granted
- 1983-09-09 JP JP58165353A patent/JPS5966126A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA1198620A (en) | 1985-12-31 |
EP0106477A2 (en) | 1984-04-25 |
EP0106477A3 (en) | 1985-01-09 |
JPS5966126A (ja) | 1984-04-14 |
US4414066A (en) | 1983-11-08 |
ES8405998A1 (es) | 1984-06-16 |
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