DE68914479D1 - Randbelichtungsverfahren für Halbleiterscheiben. - Google Patents

Randbelichtungsverfahren für Halbleiterscheiben.

Info

Publication number
DE68914479D1
DE68914479D1 DE68914479T DE68914479T DE68914479D1 DE 68914479 D1 DE68914479 D1 DE 68914479D1 DE 68914479 T DE68914479 T DE 68914479T DE 68914479 T DE68914479 T DE 68914479T DE 68914479 D1 DE68914479 D1 DE 68914479D1
Authority
DE
Germany
Prior art keywords
semiconductor wafers
exposure process
edge exposure
edge
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68914479T
Other languages
English (en)
Other versions
DE68914479T2 (de
Inventor
Manabu Gotoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63017286A external-priority patent/JPH0795516B2/ja
Priority claimed from JP22453188A external-priority patent/JPH0273621A/ja
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of DE68914479D1 publication Critical patent/DE68914479D1/de
Application granted granted Critical
Publication of DE68914479T2 publication Critical patent/DE68914479T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE68914479T 1988-01-29 1989-01-10 Randbelichtungsverfahren für Halbleiterscheiben. Expired - Lifetime DE68914479T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63017286A JPH0795516B2 (ja) 1988-01-29 1988-01-29 ウエハ周辺露光方法及び装置
JP22453188A JPH0273621A (ja) 1988-09-09 1988-09-09 ウエハ周辺露光方法

Publications (2)

Publication Number Publication Date
DE68914479D1 true DE68914479D1 (de) 1994-05-19
DE68914479T2 DE68914479T2 (de) 1994-10-06

Family

ID=26353775

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68914479T Expired - Lifetime DE68914479T2 (de) 1988-01-29 1989-01-10 Randbelichtungsverfahren für Halbleiterscheiben.

Country Status (3)

Country Link
US (1) US4899195A (de)
EP (1) EP0325930B1 (de)
DE (1) DE68914479T2 (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0448735B1 (de) * 1990-03-23 1997-08-06 Ushio Denki Kabushiki Kaisha Randbelichtungsverfahren für Halbleiterscheiben
JP2874280B2 (ja) * 1990-05-16 1999-03-24 株式会社ニコン 周縁露光装置及び周縁露光方法
US5229811A (en) * 1990-06-15 1993-07-20 Nikon Corporation Apparatus for exposing peripheral portion of substrate
JP2874292B2 (ja) * 1990-06-15 1999-03-24 株式会社ニコン 周縁露光装置及び周縁露光方法
JP3070113B2 (ja) * 1991-03-07 2000-07-24 ソニー株式会社 フォトレジストの現像処理装置
US5138366A (en) * 1991-05-23 1992-08-11 Eastman Kodak Company Method of printing color borders with color prints and prints with integral borders
JP3141471B2 (ja) * 1991-12-25 2001-03-05 株式会社ニコン ディスク媒体の製造方法、及び製造装置、並びに露光方法及び露光装置
US5303001A (en) * 1992-12-21 1994-04-12 Ultratech Stepper, Inc. Illumination system for half-field dyson stepper
US5420663A (en) * 1993-03-19 1995-05-30 Nikon Corporation Apparatus for exposing peripheral portion of substrate
KR100399813B1 (ko) 1994-12-14 2004-06-09 가부시키가이샤 니콘 노광장치
JPH0950951A (ja) * 1995-08-04 1997-02-18 Nikon Corp リソグラフィ方法およびリソグラフィ装置
JP3237522B2 (ja) 1996-02-05 2001-12-10 ウシオ電機株式会社 ウエハ周辺露光方法および装置
JP3172085B2 (ja) * 1996-03-18 2001-06-04 キヤノン株式会社 周辺露光装置
KR100257279B1 (ko) * 1996-06-06 2000-06-01 이시다 아키라 주변노광장치 및 방법
US5824457A (en) * 1996-10-02 1998-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Use of WEE (wafer edge exposure) to prevent polyimide contamination
JP3356047B2 (ja) * 1997-11-26 2002-12-09 ウシオ電機株式会社 ウエハ周辺露光装置
US6436303B1 (en) 1999-07-21 2002-08-20 Applied Materials, Inc. Film removal employing a remote plasma source
JP4245743B2 (ja) * 1999-08-24 2009-04-02 株式会社半導体エネルギー研究所 エッジリンス装置およびエッジリンス方法
JP3541783B2 (ja) 2000-06-22 2004-07-14 ウシオ電機株式会社 フィルム回路基板の周辺露光装置
US6509577B1 (en) * 2000-11-10 2003-01-21 Asml Us, Inc. Systems and methods for exposing substrate periphery
US6506688B2 (en) * 2001-01-24 2003-01-14 Macronix International Co., Inc. Method for removing photoresist layer on wafer edge
US6495312B1 (en) * 2001-02-01 2002-12-17 Lsi Logic Corporation Method and apparatus for removing photoresist edge beads from thin film substrates
KR100512006B1 (ko) * 2001-03-06 2005-09-02 삼성전자주식회사 웨이퍼 주연 부위의 노광 방법 및 이를 수행하기 위한 장치
US6618118B2 (en) 2001-05-08 2003-09-09 Asml Netherlands B.V. Optical exposure method, device manufacturing method and lithographic projection apparatus
EP1256848A3 (de) * 2001-05-08 2003-01-02 ASML Netherlands B.V. Optisches Belichtungsverfahren und lithographischer Projektionsapparat
JP4019651B2 (ja) * 2001-05-21 2007-12-12 ウシオ電機株式会社 周辺露光装置
US20040166593A1 (en) * 2001-06-22 2004-08-26 Nolte David D. Adaptive interferometric multi-analyte high-speed biosensor
JP3820946B2 (ja) * 2001-09-17 2006-09-13 ウシオ電機株式会社 周辺露光装置
WO2003032081A1 (en) * 2001-10-09 2003-04-17 Ultratech Stepper, Inc. Method and apparatus for optically defining an exposure exclusion region on a photosensitive workpiece
JP3823805B2 (ja) * 2001-10-30 2006-09-20 ウシオ電機株式会社 露光装置
US6985655B2 (en) * 2002-01-30 2006-01-10 Affymetrix, Inc. Compositions and methods involving direct write optical lithography
KR100536596B1 (ko) * 2003-03-25 2005-12-14 삼성전자주식회사 웨이퍼 가장자리 노광 장치
CN100436480C (zh) * 2003-06-11 2008-11-26 韦思公司 血小板糖蛋白IB-α变体融合多肽及其用法
US20050012938A1 (en) * 2003-07-18 2005-01-20 Jun-Ming Chen Apparatus and method for detecting wafer position
JP4083100B2 (ja) * 2003-09-22 2008-04-30 株式会社Ｓｏｋｕｄｏ 周縁部露光装置
TWI256504B (en) * 2004-06-30 2006-06-11 Innolux Display Corp Release film peeling apparatus and method
US7074710B2 (en) * 2004-11-03 2006-07-11 Lsi Logic Corporation Method of wafer patterning for reducing edge exclusion zone
US7910356B2 (en) 2005-02-01 2011-03-22 Purdue Research Foundation Multiplexed biological analyzer planar array apparatus and methods
WO2006083917A2 (en) * 2005-02-01 2006-08-10 Purdue Research Foundation Laser scanning interferometric surface metrology
US20070023643A1 (en) * 2005-02-01 2007-02-01 Nolte David D Differentially encoded biological analyzer planar array apparatus and methods
JP2009527739A (ja) * 2006-02-16 2009-07-30 パーデュー・リサーチ・ファウンデーション インライン直交位相及び反射防止により改善した直交位相干渉検出
US20080230605A1 (en) * 2006-11-30 2008-09-25 Brian Weichel Process and apparatus for maintaining data integrity
US7522282B2 (en) * 2006-11-30 2009-04-21 Purdue Research Foundation Molecular interferometric imaging process and apparatus
US20080144899A1 (en) * 2006-11-30 2008-06-19 Manoj Varma Process for extracting periodic features from images by template matching
US20080160457A1 (en) * 2006-12-28 2008-07-03 Sean Michael Collins Apparatus and method for reducing defects
WO2008089495A2 (en) 2007-01-19 2008-07-24 Purdue Research Foundation System with extended range of molecular sensing through integrated multi-modal data acquisition
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
US8580078B2 (en) 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US7858898B2 (en) * 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US7787126B2 (en) * 2007-03-26 2010-08-31 Purdue Research Foundation Method and apparatus for conjugate quadrature interferometric detection of an immunoassay
US9698070B2 (en) * 2013-04-11 2017-07-04 Infineon Technologies Ag Arrangement having a plurality of chips and a chip carrier, and a processing arrangement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449046A (en) * 1967-01-04 1969-06-10 Optomechanisms Inc Film code annotating means
US3734612A (en) * 1971-08-11 1973-05-22 Eastman Kodak Co Number on print optical apparatus
US3836246A (en) * 1971-09-03 1974-09-17 Itek Corp Image standardizer apparatus
US4008954A (en) * 1974-07-15 1977-02-22 Minolta Camera Kabushiki Kaisha Device for extinguishing unnecessary electrostatic charge in electrophotographic copier
JPS589319A (ja) * 1981-07-10 1983-01-19 Hitachi Ltd パターン露光装置
JPS59174842A (ja) * 1983-03-24 1984-10-03 Fuji Photo Film Co Ltd ポジ型感光性平版印刷版を用いた製版方法

Also Published As

Publication number Publication date
EP0325930A1 (de) 1989-08-02
DE68914479T2 (de) 1994-10-06
EP0325930B1 (de) 1994-04-13
US4899195A (en) 1990-02-06

Similar Documents

Publication Publication Date Title
DE68914479D1 (de) Randbelichtungsverfahren für Halbleiterscheiben.
DE3750589D1 (de) Verpackung für Halbleiterelemente.
KR860700182A (ko) 웨이퍼 가공용필름
DE69131762D1 (de) Herstellungsverfahren für Halbleitereinrichtungen
DE69015670D1 (de) Herstellungsmethode für Halbleitermembranen.
DE69024681D1 (de) Schleifeinrichtung für Halbleiterplättchen
DE69219535D1 (de) Behälter für Halbleiter-Wafer
DE3767362D1 (de) Wafer-traeger fuer halbleiterbauteilerzeugung.
DE3789069D1 (de) Verarbeitung einer Halbleiterscheibe.
DE3483680D1 (de) Halbleiterventil.
KR900008635A (ko) 반도체 웨이퍼의 흐림 방지장치
DE69106311D1 (de) Automatische Vorrichtung zum Läppen von Wafern.
DE3883873D1 (de) Trägerelement für Halbleiterapparat.
DE69132826D1 (de) Heizgerät für Halbleiterwafers oder Substrate
DE69125208D1 (de) Trockenätzverfahren für Halbleiter
DE3788623D1 (de) Röntgenstrahlmaske für Halbleiterbelichtung.
DE68913481D1 (de) Wafer-Positionierungsmechanismus für gekerbte Wafer.
DE3853764D1 (de) Zwischenschaltungssystem für integrierte Halbleiterschaltungen.
DE3750558D1 (de) Transfersystem für Halbleiterscheiben.
DE69131241D1 (de) Herstellungsverfahren für Halbleiteranordnungen
DE68924048D1 (de) Belichtungsmaske für ein Halbleiterplättchen und Belichtungsverfahren.
KR880701459A (ko) 실리콘 웨이퍼에 바이어스를 형성하기 위한 플래너공정
DE69205204D1 (de) Nassätzverfahren bei rotierenden Halbleitersubstraten.
KR900008697A (ko) 반도체 웨이퍼 제조방법
DE3484817D1 (de) Halbleiteranordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition