DE69125208D1 - Trockenätzverfahren für Halbleiter - Google Patents

Trockenätzverfahren für Halbleiter

Info

Publication number
DE69125208D1
DE69125208D1 DE69125208T DE69125208T DE69125208D1 DE 69125208 D1 DE69125208 D1 DE 69125208D1 DE 69125208 T DE69125208 T DE 69125208T DE 69125208 T DE69125208 T DE 69125208T DE 69125208 D1 DE69125208 D1 DE 69125208D1
Authority
DE
Germany
Prior art keywords
semiconductors
etching process
dry etching
dry
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125208T
Other languages
English (en)
Other versions
DE69125208T2 (de
Inventor
Masahiro Kotaki
Katsuhide Manabe
Masaki Mori
Masafumi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Toyota Central R&D Labs Inc
Original Assignee
Toyoda Gosei Co Ltd
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd, Toyota Central R&D Labs Inc filed Critical Toyoda Gosei Co Ltd
Publication of DE69125208D1 publication Critical patent/DE69125208D1/de
Application granted granted Critical
Publication of DE69125208T2 publication Critical patent/DE69125208T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Led Devices (AREA)
DE69125208T 1990-05-30 1991-05-29 Trockenätzverfahren für Halbleiter Expired - Fee Related DE69125208T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14074090A JP3078821B2 (ja) 1990-05-30 1990-05-30 半導体のドライエッチング方法

Publications (2)

Publication Number Publication Date
DE69125208D1 true DE69125208D1 (de) 1997-04-24
DE69125208T2 DE69125208T2 (de) 1997-10-09

Family

ID=15275611

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125208T Expired - Fee Related DE69125208T2 (de) 1990-05-30 1991-05-29 Trockenätzverfahren für Halbleiter

Country Status (4)

Country Link
US (1) US5205905A (de)
EP (1) EP0459469B1 (de)
JP (1) JP3078821B2 (de)
DE (1) DE69125208T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0444630B1 (de) * 1990-02-28 1997-05-21 Toyoda Gosei Co., Ltd. Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
EP0576566B1 (de) * 1991-03-18 1999-05-26 Trustees Of Boston University Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid
EP0579897B1 (de) * 1992-07-23 2003-10-15 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe
JP2657743B2 (ja) * 1992-10-29 1997-09-24 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
JPH07263748A (ja) * 1994-03-22 1995-10-13 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子及びその製造方法
US5838029A (en) * 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
JPH08293489A (ja) * 1995-04-25 1996-11-05 Sharp Corp 窒化ガリウム系化合物半導体のドライエッチング方法
US5915164A (en) * 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
JPH10233382A (ja) * 1997-02-17 1998-09-02 Hewlett Packard Co <Hp> 半導体の表面清浄方法
US7365369B2 (en) 1997-07-25 2008-04-29 Nichia Corporation Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP3449535B2 (ja) * 1999-04-22 2003-09-22 ソニー株式会社 半導体素子の製造方法
JP2002075965A (ja) * 2000-08-25 2002-03-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP3520919B2 (ja) * 2001-03-27 2004-04-19 士郎 酒井 窒化物系半導体装置の製造方法
EP1444727A4 (de) * 2001-10-22 2007-07-18 Unaxis Usa Inc Prozess und vorrichtung zum ätzen dünner, beschädigungsempfindlicher schichten unter verwendung von hochfrequenzgepulstew plasma
US20050040212A1 (en) * 2003-08-23 2005-02-24 Kuang-Neng Yang Method for manufacturing nitride light-emitting device
US20050139838A1 (en) * 2003-12-26 2005-06-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP4696796B2 (ja) 2005-09-07 2011-06-08 株式会社豊田自動織機 有機エレクトロルミネッセンス素子の製造方法
JP2007173465A (ja) * 2005-12-21 2007-07-05 Rohm Co Ltd 窒化物半導体発光素子の製造方法
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
CN109234703B (zh) * 2018-11-27 2020-10-16 湖南顶立科技有限公司 一种气相沉积系统
TWI680503B (zh) * 2018-12-26 2019-12-21 杰力科技股份有限公司 氮化鎵高電子移動率電晶體的閘極結構的製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5343480A (en) * 1976-10-01 1978-04-19 Matsushita Electric Ind Co Ltd Etching method of gallium nitride
US4569718A (en) * 1980-08-22 1986-02-11 At&T Bell Laboratories Method for plasma etching III-V semiconductors with a BCl3 -Cl2 gas
US4370195A (en) * 1982-03-25 1983-01-25 Rca Corporation Removal of plasma etching residues
JPS59168677A (ja) * 1983-03-14 1984-09-22 Fujitsu Ltd 半導体装置及びその製造方法
US4617193A (en) * 1983-06-16 1986-10-14 Digital Equipment Corporation Planar interconnect for integrated circuits
JPS60117631A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 化合物半導体のドライエッチング方法
DE3485368D1 (de) * 1983-11-30 1992-01-30 Toshiba Kawasaki Kk Verfahren zur herstellung eines halbleiterlasers.
JPS62119196A (ja) * 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
US4911102A (en) * 1987-01-31 1990-03-27 Toyoda Gosei Co., Ltd. Process of vapor growth of gallium nitride and its apparatus
EP0460710B1 (de) * 1987-01-31 1994-12-07 Toyoda Gosei Co., Ltd. Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung
JP2654454B2 (ja) * 1988-04-29 1997-09-17 豊田合成株式会社 半導体のドライエッチング方法
JP2654455B2 (ja) * 1988-04-29 1997-09-17 豊田合成株式会社 半導体のドライエッチング方法
US4946548A (en) * 1988-04-29 1990-08-07 Toyoda Gosei Co., Ltd. Dry etching method for semiconductor
US4985113A (en) * 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
US5034092A (en) * 1990-10-09 1991-07-23 Motorola, Inc. Plasma etching of semiconductor substrates

Also Published As

Publication number Publication date
US5205905A (en) 1993-04-27
JPH0434929A (ja) 1992-02-05
EP0459469A1 (de) 1991-12-04
JP3078821B2 (ja) 2000-08-21
EP0459469B1 (de) 1997-03-19
DE69125208T2 (de) 1997-10-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee