TWI680503B - 氮化鎵高電子移動率電晶體的閘極結構的製造方法 - Google Patents
氮化鎵高電子移動率電晶體的閘極結構的製造方法 Download PDFInfo
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- TWI680503B TWI680503B TW107147081A TW107147081A TWI680503B TW I680503 B TWI680503 B TW I680503B TW 107147081 A TW107147081 A TW 107147081A TW 107147081 A TW107147081 A TW 107147081A TW I680503 B TWI680503 B TW I680503B
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- gallium nitride
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 80
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
一種氮化鎵高電子移動率電晶體的閘極結構的製造方法,包括於基板上依序形成一通道層、一阻障層、一摻雜氮化鎵層、一未摻雜氮化鎵層以及一絕緣層,再移除部分絕緣層,以形成一溝槽。於所述基板上形成一閘極金屬層,覆蓋絕緣層與溝槽,然後在閘極金屬層上形成對準溝槽的一罩幕層,其中罩幕層與絕緣層部分重疊。利用所述罩幕層作為蝕刻罩幕,去除暴露出的閘極金屬層及其下方的絕緣層、未摻雜氮化鎵層以及摻雜氮化鎵層,之後移除罩幕層。
Description
本發明是有關於一種高電子移動率電晶體的技術,且特別是有關於一種氮化鎵高電子移動率電晶體的閘極結構的製造方法。
氮化鎵高電子移動率電晶體(high electron mobility transistor,HEMT)是利用氮化鋁鎵(AlGaN)與氮化鎵(GaN)的異質結構,於接面處會產生具有高平面電荷密度和高電子遷移率的二維電子氣(two dimensional electron gas,2DEG),因此適於高功率、高頻率和高溫度運作。
然而,具有高濃度2DEG的HEMT採用常關型(Normally-off)的電路設計,已發現這種氮化鎵高電子移動率電晶體有閘極漏電的問題,導致電晶體的開關在不正常的操作下效能下降或是失效,使可靠度降低。
本發明提供一種氮化鎵高電子移動率電晶體的閘極結構的製造方法,能製作出低閘極漏電的HEMT。
本發明的氮化鎵高電子移動率電晶體的閘極結構的製造方法,包括於基板上依序形成一通道層、一阻障層、一摻雜氮化鎵層以及一未摻雜氮化鎵層,再於所述未摻雜氮化鎵層上形成一絕緣層。藉由移除部分絕緣層形成一溝槽,再於基板上形成一閘極金屬層,覆蓋絕緣層與溝槽,之後在閘極金屬層上形成對準溝槽的一罩幕層,且罩幕層與絕緣層部分重疊。利用所述罩幕層作為蝕刻罩幕,去除暴露出的閘極金屬層及其下方的絕緣層、未摻雜氮化鎵層以及摻雜氮化鎵層,再移除所述罩幕層。
在本發明的一實施例中,上述罩幕層與上述絕緣層的重疊面積佔罩幕層的面積比例在50%以下。
在本發明的一實施例中,上述移除部分絕緣層的步驟之後還可移除露出的未摻雜氮化鎵層,以加深溝槽並露出摻雜氮化鎵層。
在本發明的一實施例中,形成的上述閘極金屬層可直接與溝槽內的摻雜氮化鎵層接觸。
在本發明的一實施例中,形成上述通道層、阻障層、摻雜氮化鎵層以及未摻雜氮化鎵層的方法例如有機金屬化學氣相沉積(MOCVD)。
在本發明的一實施例中,形成上述絕緣層的方法例如有機金屬化學氣相沉積或低壓化學氣相沉積(LPCVD)。
在本發明的一實施例中,上述形成通道層的步驟之前還可先在所述基板上形成一第一緩衝層,再於第一緩衝層上形成一第二緩衝層,其中第二緩衝層比第一緩衝層的晶格更匹配於上述通道層。
在本發明的一實施例中,上述第一緩衝層例如氮化鋁層,且上述第二緩衝層例如氮化鋁鎵(Al
xGa
1-xN,x=0.2~1)與氮化鎵的多重疊層。
在本發明的一實施例中,形成上述第一與第二緩衝層例如有機金屬化學氣相沉積。
在本發明的一實施例中,上述移除罩幕層的步驟之後還可包括形成一鈍化層,全面覆蓋閘極金屬層、絕緣層、未摻雜氮化鎵層、摻雜氮化鎵層與阻障層。
基於上述,本發明藉由兩道接近互補的光罩製程,使絕緣層位於閘極金屬層的兩側邊,因此能利用絕緣層阻隔閘極側邊的漏電流,並可通過能與通道層、阻障層與摻雜氮化鎵層一起成長的未摻雜氮化鎵層,來保護摻雜氮化鎵層,確保其不受閘極金屬層或後續源極與汲極製程的影響。因此,本發明所製造的閘極結構能提升氮化鎵高電子移動率電晶體的可靠度。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
以下實施例中所附的圖式是為了能更完整地描述發明概念的示範實施例,但是,仍可使用許多不同的形式來實施本發明,且其不應該被視為受限於所記載的實施例。在圖式中,為了清楚起見,膜層、區域及/或結構元件的相對厚度及位置可能縮小或放大。
圖1A至圖1G是依照本發明的一實施例的一種氮化鎵高電子移動率電晶體的閘極結構的製造流程剖面示意圖。
請先參照圖1A,於基板100上依序形成一通道層102、一阻障層104、一摻雜氮化鎵層106以及一未摻雜氮化鎵層108,其中基板100例如藍寶石(Sapphire)、碳化矽(SiC)、氧化鋅(ZnO)、矽(Si)、氧化鎵(Ga
2O
3)等材料;通道層102的材料例如氮化鎵(GaN);阻障層104的材料例如氮化鋁鎵(AlGaN)。在本實施例中,形成通道層102、阻障層104、摻雜氮化鎵層106以及未摻雜氮化鎵層108的方法例如有機金屬化學氣相沉積(MOCVD)或其他磊晶製程。在一實施例中,未摻雜氮化鎵層108的厚度例如小於200埃。此外,在形成通道層102之前,還可先在基板100上形成一第一緩衝層110與一第二緩衝層112,其中第二緩衝層112比第一緩衝層110的晶格更匹配於上述通道層102,以解決基板100與通道層102之間可能具有的晶格不匹配問題。在一實施例中,上述第一緩衝層例如氮化鋁層,且上述第二緩衝層例如氮化鋁鎵(Al
xGa
1-xN,x=0.2~1)與氮化鎵的多重疊層。而且,形成第一與第二緩衝層110與112的方法也可以是有機金屬化學氣相沉積或其他磊晶製程。因此,基板100上的各層可採用相同的磊晶製程成長並且只要變更製程參數(如原料種類、氣體流量等)即可形成膜層。
然後,請參照圖1B,於未摻雜氮化鎵層108上形成一絕緣層114,且絕緣層114的材料例如氮化矽(Si
3N
4)、氧化鋁(Al
2O
3)、氧化矽(SiO
2)、氮化硼(BN)或氮化鋁(AlN),但本發明並不限於此。形成絕緣層114的方法根據材料不同,可以選擇較為簡單的低壓化學氣相沉積(LPCVD)或者有機金屬化學氣相沉積。在一實施例中,絕緣層114的厚度例如小於200埃。
接著,請參照圖1C,藉由移除部分絕緣層形成一溝槽116,且形成的溝槽116一般要比後續形成的閘極要窄一些。溝槽116的形成方式例如利用一層光阻118作為蝕刻罩幕,對圖1B的絕緣層114進行蝕刻,直到露出未摻雜氮化鎵層108,並留下被光阻118覆蓋的絕緣層114a。
隨後,請參照圖1D,在去除剩餘光阻118後,於基板100上形成一整層的閘極金屬層120,覆蓋絕緣層114a與溝槽116,其中閘極金屬層120的材料例如鎳、鉑、氮化鉭、氮化鈦、鎢或前述金屬的合金物。
然後,請參照圖1E,在圖1D的閘極金屬層120上形成對準溝槽116的一罩幕層122,且罩幕層122與絕緣層114a部分重疊,因此罩幕層122基本上與圖1C的光阻118是呈現接近互補的圖案。在本實施例中,罩幕層122可以是光阻或氧化矽之類的硬罩幕材料。然後,利用罩幕層122作為蝕刻罩幕,先去除暴露出的閘極金屬層,並留下被罩幕層122覆蓋的閘極金屬層120a。在一實施例中,罩幕層122與絕緣層114a的重疊面積佔罩幕層122的面積比例在50%以下,例如在30%以下或者在20%以下。由於絕緣層114a是用來斷絕閘極金屬層120a的側壁漏電,所以確保其位置設於閘極金屬層120a兩側即可,絕緣層114a的面積佔比則以不影響元件操作為準,故不限於上述範圍。
接著,請參照圖1F,利用罩幕層122作為蝕刻罩幕,持續移除閘極金屬層120a下方(圖1E中)的絕緣層114a、未摻雜氮化鎵層108以及摻雜氮化鎵層106,而得經蝕刻的絕緣層114b、未摻雜氮化鎵層108a以及摻雜氮化鎵層106a所組成的閘極結構。
然後,請參照圖1G,移除圖1F的罩幕層122。而在移除罩幕層的步驟之後還可形成一鈍化層124全面覆蓋閘極金屬層120a、絕緣層114b、未摻雜氮化鎵層108a、摻雜氮化鎵層106a與阻障層104,其中鈍化層124的材料例如氮化矽或氧化矽,用以緩解基板100表面應力。
若要製作氮化鎵高電子移動率電晶體,可在上述閘極結構形成後再於基板100上形成源極金屬與汲極金屬。
圖2A至圖2D是依照本發明的另一實施例的一種氮化鎵高電子移動率電晶體的閘極結構的製造流程剖面示意圖,其中使用與上一實施例相同的元件符號來代表相同或相似的構件,且所省略的部分技術說明,如各層或區域的位置、尺寸、材料、摻雜與否、功能等均可參照圖1A至圖1G的內容,因此於下文不再贅述。
請先參照圖2A,本實施例的製程可先依循上一實施例中的圖1A至圖1C,故不再贅述。然後,在得到經蝕刻的絕緣層104a之後,可利用光阻118或絕緣層104a作為蝕刻罩幕,繼續移除露出的未摻雜氮化鎵層108b,以加深溝槽116並露出摻雜氮化鎵層106。
接著,請參照圖2B,在去除剩餘光阻118後,於基板100上形成一整層的閘極金屬層120,覆蓋絕緣層114a、未摻雜氮化鎵層108b與溝槽116,且形成的閘極金屬層120直接與溝槽116內的摻雜氮化鎵層106接觸。
然後,請參照圖2C,在圖2B的閘極金屬層120上形成對準溝槽116的一罩幕層122,且罩幕層122與絕緣層114a部分重疊。之後,利用罩幕層122作為蝕刻罩幕,先去除暴露出的閘極金屬層,並留下被罩幕層122覆蓋的閘極金屬層120a。
接著,請參照圖2D,利用罩幕層122作為蝕刻罩幕,持續移除閘極金屬層120a下方(圖2C中)的絕緣層114a、未摻雜氮化鎵層108b以及摻雜氮化鎵層106,而得經蝕刻的絕緣層114b、未摻雜氮化鎵層108c以及摻雜氮化鎵層106a所組成的閘極結構。因此,本實施例中的未摻雜氮化鎵層108c是介於絕緣層114b與摻雜氮化鎵層106a之間。
綜上所述,本發明在形成閘極金屬層之前形成兩層特定膜層並搭配一道光罩製程,即可於閘極金屬層的兩側邊底下形成絕緣層與未摻雜氮化鎵層,因此能利用前述絕緣層阻隔閘極側邊的漏電流,以降低閘極漏電;並可通過前述未摻雜氮化鎵層來保護作為閘極之摻雜氮化鎵層,確保其不受閘極金屬層或後續源極與汲極製程的影響。因此,本發明所製造的閘極結構能提升氮化鎵高電子移動率電晶體的可靠度。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧基板
102‧‧‧通道層
104‧‧‧阻障層
106、106a‧‧‧摻雜氮化鎵層
108、108a、108b、108c‧‧‧未摻雜氮化鎵層
110‧‧‧第一緩衝層
112‧‧‧第二緩衝層
114、114a、114b‧‧‧絕緣層
116‧‧‧溝槽
118‧‧‧光阻層
120、120a‧‧‧閘極金屬層
122‧‧‧罩幕層
124‧‧‧鈍化層
圖1A至圖1G是依照本發明的一實施例的一種氮化鎵高電子移動率電晶體的閘極結構的製造流程剖面示意圖。 圖2A至圖2D是依照本發明的另一實施例的一種氮化鎵高電子移動率電晶體的閘極結構的製造流程剖面示意圖。
Claims (10)
- 一種氮化鎵高電子移動率電晶體的閘極結構的製造方法,包括: 於基板上依序形成一通道層、一阻障層、一摻雜氮化鎵層以及一未摻雜氮化鎵層; 於所述未摻雜氮化鎵層上形成一絕緣層; 移除部分所述絕緣層,以形成一溝槽; 於所述基板上形成一閘極金屬層,覆蓋所述絕緣層與所述溝槽; 在所述閘極金屬層上形成對準所述溝槽的一罩幕層,且所述罩幕層與所述絕緣層部分重疊; 利用所述罩幕層作為蝕刻罩幕,去除暴露出的所述閘極金屬層及其下方的所述絕緣層、所述未摻雜氮化鎵層以及所述摻雜氮化鎵層;以及 移除所述罩幕層。
- 如申請專利範圍第1項所述的製造方法,其中所述罩幕層與所述絕緣層的重疊面積佔所述罩幕層的面積比例在50%以下。
- 如申請專利範圍第1項所述的製造方法,其中移除部分所述絕緣層之後更包括:移除露出的所述未摻雜氮化鎵層,以加深所述溝槽並露出所述摻雜氮化鎵層。
- 如申請專利範圍第3項所述的製造方法,其中形成的所述閘極金屬層直接與所述溝槽內的所述摻雜氮化鎵層接觸。
- 如申請專利範圍第1項所述的製造方法,其中形成所述通道層、所述阻障層、所述摻雜氮化鎵層以及所述未摻雜氮化鎵層的方法包括有機金屬化學氣相沉積。
- 如申請專利範圍第1項所述的製造方法,其中形成所述絕緣層的方法包括有機金屬化學氣相沉積或低壓化學氣相沉積。
- 如申請專利範圍第1項所述的製造方法,其中在形成所述通道層之前更包括: 於所述基板上形成一第一緩衝層;以及 於所述第一緩衝層上形成一第二緩衝層,其中所述第二緩衝層比所述第一緩衝層的晶格更匹配於所述通道層。
- 如申請專利範圍第7項所述的製造方法,其中所述通道層為氮化鎵層,所述第一緩衝層為氮化鋁層,且所述第二緩衝層為氮化鋁鎵與氮化鎵的多重疊層。
- 如申請專利範圍第7項所述的製造方法,其中形成所述第一緩衝層與所述第二緩衝層的方法包括有機金屬化學氣相沉積。
- 如申請專利範圍第1項所述的製造方法,其中移除所述罩幕層之後更包括形成一鈍化層,全面覆蓋所述閘極金屬層、所述絕緣層、所述未摻雜氮化鎵層、所述摻雜氮化鎵層與所述阻障層。
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US10720506B1 (en) | 2020-07-21 |
US20200212197A1 (en) | 2020-07-02 |
TW202025258A (zh) | 2020-07-01 |
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