DE3752140D1 - Trockenes Ätzverfahren - Google Patents

Trockenes Ätzverfahren

Info

Publication number
DE3752140D1
DE3752140D1 DE3752140T DE3752140T DE3752140D1 DE 3752140 D1 DE3752140 D1 DE 3752140D1 DE 3752140 T DE3752140 T DE 3752140T DE 3752140 T DE3752140 T DE 3752140T DE 3752140 D1 DE3752140 D1 DE 3752140D1
Authority
DE
Germany
Prior art keywords
etching process
dry etching
dry
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3752140T
Other languages
English (en)
Other versions
DE3752140T2 (de
Inventor
Sadayuki Okudaira
Kazunori Tsujimoto
Shinichi Tachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3752140D1 publication Critical patent/DE3752140D1/de
Application granted granted Critical
Publication of DE3752140T2 publication Critical patent/DE3752140T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
DE3752140T 1986-09-05 1987-08-12 Trockenes Ätzverfahren Expired - Fee Related DE3752140T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20783286 1986-09-05
JP9973987 1987-04-24

Publications (2)

Publication Number Publication Date
DE3752140D1 true DE3752140D1 (de) 1997-12-18
DE3752140T2 DE3752140T2 (de) 1998-03-05

Family

ID=26440846

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3752140T Expired - Fee Related DE3752140T2 (de) 1986-09-05 1987-08-12 Trockenes Ätzverfahren

Country Status (4)

Country Link
US (1) US5705029A (de)
EP (1) EP0258698B1 (de)
JP (1) JP2656500B2 (de)
DE (1) DE3752140T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63238288A (ja) * 1987-03-27 1988-10-04 Fujitsu Ltd ドライエツチング方法
EP0297898B1 (de) * 1987-07-02 1995-10-11 Kabushiki Kaisha Toshiba Verfahren zum Trockenätzen
JPS6432633A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Taper etching method
JPH0276223A (ja) * 1988-08-05 1990-03-15 Siemens Ag 金属接触の製造方法と装置
JPH02210826A (ja) * 1989-02-10 1990-08-22 Hitachi Ltd プラズマエッチング方法及び装置
JPH02247390A (ja) * 1989-03-20 1990-10-03 Shin Meiwa Ind Co Ltd ドライエッチング装置
JPH0327522A (ja) * 1989-06-26 1991-02-05 Hitachi Ltd 半導体基板への薄膜加工方法及びその装置並びに薄膜加工装置
US5002631A (en) * 1990-03-09 1991-03-26 At&T Bell Laboratories Plasma etching apparatus and method
KR0165898B1 (ko) * 1990-07-02 1999-02-01 미다 가쓰시게 진공처리방법 및 장치
JP3220992B2 (ja) * 1991-01-22 2001-10-22 ソニー株式会社 ドライエッチング方法
US5427670A (en) * 1992-12-10 1995-06-27 U.S. Philips Corporation Device for the treatment of substrates at low temperature
DE19841964B4 (de) * 1998-09-14 2004-08-05 Robert Bosch Gmbh Verfahren zur Einstellung der Ätzgeschwindigkeit beim anisotropen Plasmaätzen von lateralen Strukturen
US7098143B2 (en) 2003-04-25 2006-08-29 Texas Instruments Incorporated Etching method using an at least semi-solid media
US6956308B2 (en) 2003-07-15 2005-10-18 Nikon Corporation Dual flow circulation system for a mover
US20050016467A1 (en) * 2003-07-24 2005-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for dry chamber temperature control
US7355308B2 (en) * 2003-08-21 2008-04-08 Nikon Corporation Mover combination with two circulation flows
US7749400B2 (en) * 2005-12-16 2010-07-06 Jason Plumhoff Method for etching photolithographic substrates
US20080073563A1 (en) * 2006-07-01 2008-03-27 Nikon Corporation Exposure apparatus that includes a phase change circulation system for movers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4383885A (en) * 1980-02-06 1983-05-17 Bell Telephone Laboratories, Incorporated Reactive sputter etching of polysilicon utilizing a chlorine etch gas
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
JPS59124135A (ja) * 1982-12-28 1984-07-18 Toshiba Corp 反応性イオンエツチング方法
US4445966A (en) * 1983-06-20 1984-05-01 Honeywell Inc. Method of plasma etching of films containing chromium
JPS607728A (ja) * 1983-06-27 1985-01-16 Nec Corp 半導体装置の製造方法
DE3376186D1 (en) * 1983-08-02 1988-05-05 Ibm Deutschland Dry-etching process and its use
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4468285A (en) * 1983-12-22 1984-08-28 Advanced Micro Devices, Inc. Plasma etch process for single-crystal silicon with improved selectivity to silicon dioxide
US4490209B2 (en) * 1983-12-27 2000-12-19 Texas Instruments Inc Plasma etching using hydrogen bromide addition
JPH0614518B2 (ja) * 1984-01-27 1994-02-23 株式会社日立製作所 表面反応の制御方法
JPS6148924A (ja) * 1984-08-15 1986-03-10 Nippon Telegr & Teleph Corp <Ntt> 高融点金属のドライエツチング法
JPH0626208B2 (ja) * 1985-02-14 1994-04-06 株式会社東芝 ドライエツチング方法
GB2171360A (en) * 1985-02-19 1986-08-28 Oerlikon Buehrle Inc Etching aluminum/copper alloy films
US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system

Also Published As

Publication number Publication date
JP2656500B2 (ja) 1997-09-24
US5705029A (en) 1998-01-06
EP0258698A3 (de) 1989-02-08
EP0258698B1 (de) 1997-11-12
DE3752140T2 (de) 1998-03-05
EP0258698A2 (de) 1988-03-09
JPS6432628A (en) 1989-02-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee