DE68926855T2 - Trockenätzverfahren - Google Patents

Trockenätzverfahren

Info

Publication number
DE68926855T2
DE68926855T2 DE68926855T DE68926855T DE68926855T2 DE 68926855 T2 DE68926855 T2 DE 68926855T2 DE 68926855 T DE68926855 T DE 68926855T DE 68926855 T DE68926855 T DE 68926855T DE 68926855 T2 DE68926855 T2 DE 68926855T2
Authority
DE
Germany
Prior art keywords
etching process
dry etching
dry
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926855T
Other languages
English (en)
Other versions
DE68926855D1 (de
Inventor
Mikio Nonaka
Hiroyuki Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Engineering Works Co Ltd
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Engineering Works Co Ltd, Shibaura Mechatronics Corp filed Critical Shibaura Engineering Works Co Ltd
Application granted granted Critical
Publication of DE68926855D1 publication Critical patent/DE68926855D1/de
Publication of DE68926855T2 publication Critical patent/DE68926855T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
DE68926855T 1988-11-18 1989-11-17 Trockenätzverfahren Expired - Fee Related DE68926855T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP29173688 1988-11-18
JP246189 1989-01-09
JP13518989 1989-05-29
PCT/JP1989/001174 WO1990005994A1 (en) 1988-11-18 1989-11-17 Dry-etching method

Publications (2)

Publication Number Publication Date
DE68926855D1 DE68926855D1 (de) 1996-08-22
DE68926855T2 true DE68926855T2 (de) 1997-02-13

Family

ID=27275359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926855T Expired - Fee Related DE68926855T2 (de) 1988-11-18 1989-11-17 Trockenätzverfahren

Country Status (5)

Country Link
US (1) US5201994A (de)
EP (1) EP0406434B1 (de)
KR (1) KR950000662B1 (de)
DE (1) DE68926855T2 (de)
WO (1) WO1990005994A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4228551C2 (de) * 1992-08-27 1996-02-22 Linde Ag Verfahren und Anwendung des Verfahrens zur reinigenden Behandlung von Oberflächen mit einem Niederdruckplasma
US5338362A (en) * 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
JP2804700B2 (ja) * 1993-03-31 1998-09-30 富士通株式会社 半導体装置の製造装置及び半導体装置の製造方法
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
JPH08186098A (ja) * 1994-12-27 1996-07-16 Ryoden Semiconductor Syst Eng Kk 感光性樹脂の除去方法および除去装置
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6015761A (en) * 1996-06-26 2000-01-18 Applied Materials, Inc. Microwave-activated etching of dielectric layers
US5911887A (en) * 1996-07-19 1999-06-15 Cypress Semiconductor Corporation Method of etching a bond pad
US5786276A (en) * 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6051504A (en) * 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6080680A (en) * 1997-12-19 2000-06-27 Lam Research Corporation Method and composition for dry etching in semiconductor fabrication
US6057645A (en) * 1997-12-31 2000-05-02 Eaton Corporation Plasma discharge device with dynamic tuning by a movable microwave trap
US6461529B1 (en) 1999-04-26 2002-10-08 International Business Machines Corporation Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US7357115B2 (en) * 2003-03-31 2008-04-15 Lam Research Corporation Wafer clamping apparatus and method for operating the same
FR2865135B1 (fr) * 2004-01-20 2007-10-05 Serac Group Installation de sterilisation d'articles par bombardement electronique
US7268082B2 (en) * 2004-04-30 2007-09-11 International Business Machines Corporation Highly selective nitride etching employing surface mediated uniform reactive layer films
US8715455B2 (en) * 2007-02-06 2014-05-06 Tokyo Electron Limited Multi-zone gas distribution system for a treatment system
CN104203816B (zh) * 2012-04-02 2016-02-03 住友电气工业株式会社 多孔碳材料的制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0001538B1 (de) * 1977-10-06 1983-01-12 International Business Machines Corporation Verfahren zum reaktiven Ionenätzen eines Bauelementes
JPS5751265A (en) * 1980-09-10 1982-03-26 Hitachi Ltd Microwave plasma etching device
JPS57139927A (en) * 1981-02-23 1982-08-30 Nec Corp Manufacture of semiconductor integrated circuit
JPS58150429A (ja) * 1982-03-03 1983-09-07 Hitachi Ltd ドライエツチング方法
JPS5950567A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd 電界効果トランジスタの製造方法
DE3420347A1 (de) * 1983-06-01 1984-12-06 Hitachi, Ltd., Tokio/Tokyo Gas und verfahren zum selektiven aetzen von siliciumnitrid
JPH07105378B2 (ja) * 1984-08-24 1995-11-13 富士通株式会社 クロム系膜のドライエツチング方法
US4615764A (en) * 1984-11-05 1986-10-07 Allied Corporation SF6/nitriding gas/oxidizer plasma etch system
JPS61123142A (ja) * 1984-11-20 1986-06-11 Matsushita Electric Ind Co Ltd ドライエツチング方法
US4568410A (en) * 1984-12-20 1986-02-04 Motorola, Inc. Selective plasma etching of silicon nitride in the presence of silicon oxide
JPS61266584A (ja) * 1985-05-22 1986-11-26 Tokuda Seisakusho Ltd ドライエツチング方法
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride

Also Published As

Publication number Publication date
EP0406434B1 (de) 1996-07-17
DE68926855D1 (de) 1996-08-22
WO1990005994A1 (en) 1990-05-31
KR950000662B1 (ko) 1995-01-27
US5201994A (en) 1993-04-13
EP0406434A4 (en) 1991-05-15
KR900702563A (ko) 1990-12-07
EP0406434A1 (de) 1991-01-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee