DE69229470D1 - Fotochemisches Trocken-Ätzverfahren - Google Patents

Fotochemisches Trocken-Ätzverfahren

Info

Publication number
DE69229470D1
DE69229470D1 DE69229470T DE69229470T DE69229470D1 DE 69229470 D1 DE69229470 D1 DE 69229470D1 DE 69229470 T DE69229470 T DE 69229470T DE 69229470 T DE69229470 T DE 69229470T DE 69229470 D1 DE69229470 D1 DE 69229470D1
Authority
DE
Germany
Prior art keywords
etching process
dry etching
photochemical
photochemical dry
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229470T
Other languages
English (en)
Other versions
DE69229470T2 (de
Inventor
Jun-Ichi Nishizawa
Kenji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Japan Science and Technology Agency
JFE Mineral Co Ltd
Original Assignee
Kawatetsu Mining Co Ltd
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawatetsu Mining Co Ltd, Research Development Corp of Japan filed Critical Kawatetsu Mining Co Ltd
Application granted granted Critical
Publication of DE69229470D1 publication Critical patent/DE69229470D1/de
Publication of DE69229470T2 publication Critical patent/DE69229470T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69229470T 1991-12-10 1992-12-08 Fotochemisches Trocken-Ätzverfahren Expired - Fee Related DE69229470T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34984791A JP3184988B2 (ja) 1991-12-10 1991-12-10 結晶面異方性ドライエッチング方法

Publications (2)

Publication Number Publication Date
DE69229470D1 true DE69229470D1 (de) 1999-07-29
DE69229470T2 DE69229470T2 (de) 2000-01-05

Family

ID=18406523

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229470T Expired - Fee Related DE69229470T2 (de) 1991-12-10 1992-12-08 Fotochemisches Trocken-Ätzverfahren

Country Status (4)

Country Link
US (1) US5500079A (de)
EP (1) EP0546493B1 (de)
JP (1) JP3184988B2 (de)
DE (1) DE69229470T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6230071B1 (en) * 1996-05-24 2001-05-08 The Regents Of The University Of California Depth enhancement of ion sensitized data
US6004881A (en) * 1997-04-24 1999-12-21 The United States Of America As Represented By The Secretary Of The Air Force Digital wet etching of semiconductor materials
US6207553B1 (en) * 1999-01-26 2001-03-27 Advanced Micro Devices, Inc. Method of forming multiple levels of patterned metallization
US20110027999A1 (en) * 2006-08-16 2011-02-03 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
WO2010071050A1 (ja) * 2008-12-18 2010-06-24 コニカミノルタオプト株式会社 成形型及びガラス成形体の製造方法
CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691014B2 (ja) * 1984-11-14 1994-11-14 株式会社日立製作所 半導体装置の製造装置
US4643799A (en) * 1984-12-26 1987-02-17 Hitachi, Ltd. Method of dry etching
JPS61189644A (ja) * 1985-02-19 1986-08-23 Hitachi Ltd ドライエツチング方法

Also Published As

Publication number Publication date
DE69229470T2 (de) 2000-01-05
EP0546493B1 (de) 1999-06-23
US5500079A (en) 1996-03-19
EP0546493A1 (de) 1993-06-16
JP3184988B2 (ja) 2001-07-09
JPH05160086A (ja) 1993-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KAWATETSU MINING CO., LTD., TOKIO/TOKYO, JP

Owner name: RESEARCH DEVELOPMENT CORP. OF JAPAN, TOKIO/TOK, JP

Owner name: TOHOKU UNIVERSITY, SENDAI, MIYAGI, JP

8339 Ceased/non-payment of the annual fee